Transparent electrode for oxygen production, method for producing same, tandem water decomposition reaction electrode provided with same, and oxygen production device using same

Patent metadata

Field	Value
Publication number	US-12344945-B2
Application number	US-202117544166-A
Country	US
Kind code	B2
Filing date	Dec 7, 2021
Priority date	Aug 9, 2017
Publication date	Jul 1, 2025
Grant date	Jul 1, 2025

Abstract

A method for producing a transparent electrode for oxygen production having a Ta nitride layer on a transparent substrate, including: a step of forming a Ta nitride precursor layer on the transparent substrate; and a step of nitriding the Ta nitride precursor layer with a mixed gas containing ammonia and a carrier gas.

First claim

The invention claimed is:

1. A transparent electrode, comprising:
a transparent substrate;
a nitride semiconductor layer on the transparent substrate; and
a Ta nitride layer on the nitride semiconductor layer, wherein
the transparent electrode has a light transmittance of 80% or more at wavelength of 600 nm to 900 nm and a photocurrent density of 3 mA/cm 2 or more at 1.23 V RHE under AM1.5G irradiation.

2. The transparent electrode for oxygen production according to claim 1 , wherein the Ta nitride layer is a Ta 3 N 5 layer.

3. The transparent electrode according to claim 1 , wherein the nitride semiconductor layer is a GaN layer.

4. The transparent electrode according to claim 1 , wherein the transparent substrate is a sapphire substrate or a SiO 2 substrate.

5. The transparent electrode according to claim 1 , wherein the photocurrent density of the transparent electrode at 1.23 V RHE under AM1.5G irradiation is 4 mA/cm 2 or more.

6. The transparent electrode according to claim 1 , wherein the light transmittance of the transparent electrode at the wavelength of 600 nm to 900 nm is 95% or more.

7. The transparent electrode according to claim 1 , wherein the Ta nitride layer is a TaN layer.

8. The transparent electrode according to claim 1 , wherein the nitride semiconductor layer includes one selected from the group consisting of AlGaN, InGaN and InAlGaN.

9. The transparent electrode according to claim 1 , wherein the transparent substrate includes one selected from the group consisting of silicon nitride, aluminum nitride, silicon carbide, diamond, alkali halide and alkaline earth metal halide.

10. A tandem water splitting reaction electrode, comprising:
the transparent electrode according to claim 1 configured for oxygen production; and
an electrode stacked with the transparent electrode and configured for hydrogen production.

11. A water splitting device, comprising the tandem water splitting reaction electrode according to claim 10 .

12. A synthesis device, comprising:
the water splitting device according to claim 11 ; and
a reactor comprising a catalyst therein, wherein
hydrogen obtained from the water splitting device and another raw material are introduced into the reactor and reacted in the reactor.

13. An oxygen production device, comprising the transparent electrode according to claim 1 .

14. A water splitting device, comprising the transparent electrode according to claim 1 .

15. A synthesis device, comprising:
the water splitting device according to claim 14 ; and
a reactor comprising a catalyst therein, wherein
hydrogen obtained from the water splitting device and another raw material are introduced into the reactor and reacted in the reactor.

16. A water splitting device, comprising:
the transparent electrode according claim 1 configured for oxygen production; and
a tandem water splitting reaction electrode comprising another transparent electrode for oxygen production and an electrode for hydrogen production having an absorption peak at a wavelength longer than 600 nm are combined, wherein
the another transparent electrode for oxygen production comprises Ta 3 N 5 as an oxygen production-side electrode in a water splitting reaction, wherein the another transparent electrode has a light transmittance of 80% or more at 600 nm to 900 nm and a photocurrent density of 3 mA/cm 2 or more at 1.23 V RHE under AM1.5G irradiation.

17. A synthesis device, comprising:
the water splitting device according to claim 16 ; and
a reactor comprising a catalyst therein, wherein
hydrogen obtained from the water splitting device and another raw material are introduced into the reactor and reacted in the reactor.

Assignees

• Mitsubishi Chem Corp
• Univ Tokyo
• Japan Tech Research Association Of Artificial Photosynthetic Chemical Process
• Aist

Inventors

• Nishiyama Hiroshi
• Higashi Tomohiro
• Sasaki Yutaka
• Yamada Taro
• Domen Kazunari
• Suzuki Yohichi
• Akiyama Seiji

Classifications

• B01J35/395

  Thickness of the active catalytic layer · CPC title

• B01J2235/15

  X-ray diffraction · CPC title

• B01J2235/00

  Indexing scheme associated with group B01J35/00, related to the analysis techniques used to determine the catalysts form or properties · CPC title

• C01B13/0207

  Water · CPC title

• C25B9/17

  Cells comprising dimensionally-stable non-movable electrodes; Assemblies of constructional parts thereof · CPC title