Conductivity based on selective etch for GaN devices and applications thereof
US-9206524-B2 · Dec 8, 2015 · US
Method for producing photoelectrode
US2016333485A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016333485-A1 |
| Application number | US-201615221212-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jul 27, 2016 |
| Priority date | May 16, 2011 |
| Publication date | Nov 17, 2016 |
| Grant date | — |
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Abstract
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A photoelectrode ( 100 ) of the present invention includes a conductive layer ( 12 ) and a photocatalytic layer ( 13 ) provided on the conductive layer ( 12 ). The conductive layer ( 12 ) is made of a metal nitride. The photocatalytic layer ( 13 ) is made of at least one selected from the group consisting of a nitride semiconductor and an oxynitride semiconductor. When the photocatalytic layer ( 13 ) is made of a n-type semiconductor, the energy difference between the vacuum level and the Fermi level of the conductive layer ( 12 ) is smaller than the energy difference between the vacuum level and the Fermi level of the photocatalytic layer ( 13 ). When the photocatalytic layer ( 13 ) is made of a p-type semiconductor, the energy difference between the vacuum level and the Fermi level of the conductive layer ( 12 ) is larger than the energy difference between the vacuum level and the Fermi level of the photocatalytic layer ( 13 ).
First claim
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1 - 6 . (canceled) 7 . A method for producing a photoelectrode having a conductive layer and a photocatalytic layer provided on the conductive layer, the method comprising the steps of: forming a metal nitride film serving as the conductive layer on a substrate; forming a metal oxide film on the metal nitride film; and subjecting the metal oxide film to nitriding treatment to form the photocatalytic layer. 8 . The method for producing a photoelectrode according to claim 7 , wherein the nitriding treatment is performed by reacting the metal oxide film with ammonia gas. 9 . The method for producing a photoelectrode according to claim 7 , further comprising a step of removing the substrate. 10 . The method for producing a photoelectrode according to claim 7 , wherein the metal oxide film is at least one selected from the group consisting of a film of an oxide containing a tantalum element, a film of an oxide containing a niobium element, and a film of an oxide containing a titanium element. 11 . (canceled)
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Hydrogen production from non-carbon containing sources, e.g. by water electrolysis · CPC title
Chemistry & Metallurgy · mapped topic
Operations & Transport · mapped topic
Chemistry & Metallurgy · mapped topic
by electrolysis of water · CPC title
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- What does patent US2016333485A1 cover?
- A photoelectrode ( 100 ) of the present invention includes a conductive layer ( 12 ) and a photocatalytic layer ( 13 ) provided on the conductive layer ( 12 ). The conductive layer ( 12 ) is made of a metal nitride. The photocatalytic layer ( 13 ) is made of at least one selected from the group consisting of a nitride semiconductor and an oxynitride semiconductor. When the photocatalytic layer …
- Who is the assignee on this patent?
- Panasonic Ip Man Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification C25B1/003. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Nov 17 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).