Heat treatment method and heat treatment apparatus

Patent metadata

Field	Value
Publication number	US-12341006-B2
Application number	US-202016993500-A
Country	US
Kind code	B2
Filing date	Aug 14, 2020
Priority date	Aug 20, 2019
Publication date	Jun 24, 2025
Grant date	Jun 24, 2025

Abstract

A heat treatment method includes: forming an amorphous silicon film having a hydrogen concentration in a film of 5×1019 atoms/cm3 or more, on a substrate; and irradiating the substrate with microwaves to heat the amorphous silicon film thereby forming a polycrystalline silicon film from the amorphous silicon film.

First claim

What is claimed is:

1. A heat treatment method comprising:
forming an amorphous silicon film having a hydrogen concentration of 5×10 19 atoms/cm 3 to 2×10 21 atoms/cm 3 , on a substrate by supplying a nonmetal-containing gas to a processing container in a state where an inside of the processing container is a pressure lower than atmospheric pressure and the substrate is heated in a range of 300° C. to 420° C.;
after the forming the amorphous silicon film on the substrate, heating the amorphous silicon film having the hydrogen concentration of 5×10 19 atoms/cm 3 to 2×10 21 atoms/cm 3 with heat generated by a resistance heating element including a wire to a first temperature; and
after the heating the amorphous silicon film with the heat generated by the resistance heating element, irradiating the substrate with microwaves to heat the amorphous silicon film to a second temperature that is higher than the first temperature thereby forming a polycrystalline silicon film from the amorphous silicon film.

2. The heat treatment method according to claim 1 , wherein in the forming of the polycrystalline silicon film, the substrate is irradiated with microwaves while the substrate is heated by the heat generated by the resistance heating element.

3. The heat treatment method according to claim 2 , wherein a frequency of the microwaves is in a range from 20 GHz to 100 GHz.

4. The heat treatment method according to claim 3 , wherein the hydrogen concentration in the amorphous silicon film is 1×10 20 atoms/cm 3 .

5. The heat treatment method according to claim 1 , wherein a frequency of the microwaves is in a range from 20 GHz to 100 GHz.

6. The heat treatment method according to claim 1 , wherein the hydrogen concentration in the amorphous silicon film is 1×10 20 atoms/cm 3 .

7. The heat treatment method according to claim 1 , wherein the first temperature is in a range of 200° C. to 400° C., and the second temperature is in a range of 550° C. to 650° C.

8. The heat treatment method according to claim 1 , wherein, in the forming the amorphous silicon film, the nonmetal-containing gas is a disilane gas and the inside of the processing container is adjusted in a range of 50 Pa to 500 Pa.

Assignees

• Tokyo Electron Ltd

Inventors

• Matsuura Hiroyuki

Classifications

• H10P14/3454

  Amorphous · CPC title

• H10P14/3411 Primary

  Silicon, silicon germanium or germanium · CPC title

• H10P72/0432

  mainly by conduction · CPC title

• H10P14/3456

  Polycrystalline · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title