Single crystal semiconductor structure and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-12336247-B2
Application number	US-202418417984-A
Country	US
Kind code	B2
Filing date	Jan 19, 2024
Priority date	Nov 22, 2019
Publication date	Jun 17, 2025
Grant date	Jun 17, 2025

Abstract

A single crystal semiconductor structure includes: an amorphous substrate; a single crystal semiconductor layer provided on the amorphous substrate; and a thin orienting film provided between the amorphous substrate and the single crystal semiconductor layer, wherein the thin orienting film is a single crystal thin film, and the thin orienting film has a non-zero thickness that is equal to or less than 10 times a critical thickness h c .

First claim

What is claimed is:

1. A single crystal semiconductor structure comprising:
an amorphous substrate;
a single crystal film formed directly on the amorphous substrate;
a single crystal semiconductor layer formed directly on the single crystal film, the single crystal semiconductor layer comprising a lower single crystal layer and an upper single crystal layer, and
a mask pattern between the lower single crystal layer and the upper single crystal layer,
wherein a lattice constant of the single crystal film is different from a lattice constant of the single crystal semiconductor layer.

2. The single crystal semiconductor structure of claim 1 , wherein a thickness of the single crystal film is 50 nm or less.

3. The single crystal semiconductor structure of claim 1 , wherein the single crystal film has a (001) direction or a (111) direction.

4. The single crystal semiconductor structure of claim 1 , wherein the single crystal semiconductor layer comprises a Group III-V compound semiconductor layer.

5. The single crystal semiconductor structure of claim 4 , wherein the single crystal semiconductor layer comprises GaN layer having a (001) direction.

6. The single crystal semiconductor structure of claim 1 ,
wherein the lower single crystal layer comprises a nucleation layer for the upper single crystal layer.

7. The single crystal semiconductor structure of claim 6 , wherein a crystallinity of the upper single crystal layer is higher than a crystallinity of the lower single crystal layer.

8. The single crystal semiconductor structure of claim 6 , wherein the single crystal film has a lattice structure that matches a lattice structure of the lower single crystal layer.

9. The single crystal semiconductor structure of claim 1 , wherein the single crystal film comprises a CeO 2 film having the (111) direction or a Sc 2 O 3 film having the (111) direction.

Assignees

• Samsung Electronics Co Ltd
• Ibeam Mat Inc

Inventors

• Choi Junhee
• Han Joohun
• Matias Vladimir

Classifications

• H10P14/3452

  Microstructure · CPC title

• H10P14/3421

  Arsenides · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/3238 Primary

  being insulating materials · CPC title

• H10P14/2924

  Structures · CPC title