Method of forming material layer

Patent metadata

Field	Value
Publication number	US-12334357-B2
Application number	US-202117547626-A
Country	US
Kind code	B2
Filing date	Dec 10, 2021
Priority date	Feb 5, 2021
Publication date	Jun 17, 2025
Grant date	Jun 17, 2025

Abstract

A method of forming a material film includes providing a non-photosensitive mask on a substrate to expose a partial region of the substrate, forming a material film on the partial region of the substrate using a sputtering process, removing the non-photosensitive mask, and heat-treating the substrate and the material film from which the non-photosensitive mask is removed under a first gas atmosphere. The material film includes a transition metal and a chalcogen element. The sputtering process may include an RF magnetron sputtering process. The heat treatment may be performed at a higher temperature than a temperature of the forming the material film.

First claim

What is claimed is:

1. A method of forming a material film, the method comprising:
providing a non-photosensitive mask on a substrate, the non-photosensitive mask exposing a partial region of the substrate;
forming a material film on the partial region of the substrate using a sputtering process;
removing the non-photosensitive mask from the substrate; and
heat-treating the substrate and the material film from which the non-photosensitive mask is removed under a first gas atmosphere to provide a heat-treated material film, wherein
the heat-treated material film is a ternary material film including a transition metal and a chalcogen element.

2. The method of claim 1 , wherein the sputtering process includes radio frequency (RF) magnetron sputtering.

3. The method of claim 1 , wherein the heat-treating is performed at a higher temperature than a temperature of the forming the material film.

4. The method of claim 1 , wherein the forming the material film is performed at a temperature in a range from about 500° C. to about 800° C.

5. The method of claim 1 , wherein the forming the material film is performed at a pressure in a range from about 0.1 mTorr to about 10 mTorr.

6. The method of claim 1 , wherein the heat-treating is performed at a temperature in a range from about 700° C. to about 1200° C.

7. The method of claim 1 , wherein the heat-treating is performed at a pressure in a range from about 1 Torr to about 20 Torr.

8. The method of claim 1 , wherein the material film includes a dopant.

9. The method of claim 1 , wherein the sputtering process is performed using a target including the transition metal and the chalcogen element.

10. The method of claim 9 , wherein the target is undoped.

11. The method of claim 9 , wherein the target includes a dopant.

12. The method of claim 1 , wherein the material film is an amorphous material film.

13. The method of claim 1 , wherein the material film is a polycrystalline material film.

14. The method of claim 1 , wherein the substrate includes one of a sapphire substrate, a silicon oxide substrate, a nanocrystalline graphene substrate, and a sulfide substrate.

15. The method of claim 1 , wherein the material film includes a transition metal chalcogenide film.

16. A method of forming a material film, the method comprising:
providing a non-photosensitive mask on a substrate, the non-photosensitive mask exposing a partial region of the substrate;
forming a material film on the partial region of the substrate using a sputtering process;
removing the non-photosensitive mask from the substrate; and
heat-treating the substrate and the material film from which the non-photosensitive mask is removed under a first gas atmosphere, wherein
the material film includes a transition metal and a chalcogen element,
the material film is represented by MX (2-a) Y a (0≤a<2) after the forming the material film on the partial region of the substrate using the sputtering process is performed and before the heat-treating the substrate and the material film is performed, and
in the MX (2-a) Y a (0≤a<2),
M is at least one of Ti, Zr, Hf, Ta, Mo, W, Tc, Re, Co, Rh, Ir, Ni, Pd, Pt, Zn, or Sn,
X is S, Se, or Te, and
Y is Nb, V, or Ti.

17. The method of claim 1 , wherein the transition metal includes one of Ti, Zr, Hf, V, Nb, Ta, Mo, W, Tc, Re, Co, Rh, Ir, Ni, Pd, Pt, Zn, and Sn.

18. The method of claim 1 , wherein the non-photosensitive mask covers a non-exposed region of the substrate, and
after the removing the non-photosensitive mask, the material film includes a plurality of material-film structures separated from each other by distances corresponding to the non-exposed region of the substrate.

19. The method of claim 1 , wherein the first gas atmosphere includes a chalcogen element.

20. The method of claim 8 , wherein the dopant includes one of Nb, V, and Ti.

Assignees

• Samsung Electronics Co Ltd
• Research & Business Found Sungkyunkwan Univ

Inventors

• Byun Kyung-Eun
• Kim Sangwoo
• Seol Minsu
• Shin Hyeonjin
• Shin Minseok
• Zhao Pin
• Kim Taehyeong
• Jung Jaehwan

Classifications

• H10P50/693 Primary

  characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane · CPC title

• H10D62/883

  Transition metal dichalcogenides, e.g. MoSe2 · CPC title

• H10D30/481

  FETs having two-dimensional material channels, e.g. transition metal dichalcogenide [TMD] FETs · CPC title

• C23C14/0623

  Sulfides, selenides or tellurides · CPC title

• H01J37/3426

  Material · CPC title