Multilayer varistor and method of manufacturing the same
US-2023143255-A1 · May 11, 2023 · US
US12334235B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12334235-B2 |
| Application number | US-202218064650-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 12, 2022 |
| Priority date | Dec 21, 2021 |
| Publication date | Jun 17, 2025 |
| Grant date | Jun 17, 2025 |
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A multilayer varistor of the present disclosure includes a sintered body, a first internal electrode, a second internal electrode, a first external electrode, a second external electrode, and a high-resistance layer. The first internal electrode and the second internal electrode are disposed in the sintered body. The first external electrode is disposed on a surface of the sintered body and is electrically connected to the first internal electrode. The second external electrode is disposed on the surface of the sintered body and is electrically connected to the second internal electrode. The high-resistance layer covers at least part of the surface of the sintered body, and the high-resistance layer has a surface having a plurality of cracks.
Opening claim text (preview).
The invention claimed is: 1. A multilayer varistor comprising: a sintered body; a first internal electrode and a second internal electrode which are disposed in the sintered body; a first external electrode disposed on a surface of the sintered body and electrically connected to the first internal electrode; a second external electrode disposed on the surface of the sintered body and electrically connected to the second internal electrode; and a high-resistance layer covering at least part of the surface of the sintered body, wherein: the high-resistance layer has a surface having a plurality of cracks, and an arithmetic mean value of lengths of the plurality of cracks is greater than or equal to 10 μm and less than or equal to 50 μm. 2. The multilayer varistor of claim 1 , wherein an arithmetic mean value of widths of the plurality of cracks is greater than or equal to 0.1 μm and less than or equal to 2 μm. 3. The multilayer varistor of claim 2 , wherein the plurality of cracks each have a deepest portion located within the high-resistance layer. 4. The multilayer varistor of claim 1 , wherein an average thickness of the high-resistance layer is greater than or equal to 0.01 μm and less than or equal to 5 μm. 5. The multilayer varistor of claim 1 , wherein the plurality of cracks each have a deepest portion located within the high-resistance layer. 6. The multilayer varistor of claim 1 , wherein the high-resistance layer includes SiO 2 as a major component. 7. The multilayer varistor of claim 1 , wherein the high-resistance layer includes ZnSiO 4 as a major component. 8. The multilayer varistor of claim 1 , wherein an arithmetic mean roughness of the surface of the high-resistance layer is greater than or equal to 0.06 μm and less than or equal to 0.9 μm. 9. A multilayer varistor comprising: a sintered body; a first internal electrode and a second internal electrode which are disposed in the sintered body; a first external electrode disposed on a surface of the sintered body and electrically connected to the first internal electrode; a second external electrode disposed on the surface of the sintered body and electrically connected to the second internal electrode; and a high-resistance layer covering at least part of the surface of the sintered body, wherein: the high-resistance layer has a surface having a plurality of cracks, and an arithmetic mean value of widths of the plurality of cracks is greater than or equal to 0.1 μm and less than or equal to 2 μm. 10. The multilayer varistor of claim 9 , wherein an average thickness of the high-resistance layer is greater than or equal to 0.01 μm and less than or equal to 5 μm. 11. The multilayer varistor of claim 9 , wherein the plurality of cracks each have a deepest portion located within the high-resistance layer. 12. A multilayer varistor comprising: a sintered body; a first internal electrode and a second internal electrode which are disposed in the sintered body; a first external electrode disposed on a surface of the sintered body and electrically connected to the first internal electrode; a second external electrode disposed on the surface of the sintered body and electrically connected to the second internal electrode; and a high-resistance layer covering at least part of the surface of the sintered body, wherein: the high-resistance layer has a surface having a plurality of cracks, and an average thickness of the high-resistance layer is greater than or equal to 0.01 μm and less than or equal to 5 μm. 13. The multilayer varistor of claim 12 , wherein the plurality of cracks each have a deepest portion located within the high-resistance layer.
comprising a plurality of layers stacked between terminals · CPC title
ZnO type · CPC title
the terminals embracing or surrounding the resistive element (H01C1/142 takes precedence) · CPC title
Varistor boundary, e.g. surface layers (H01C7/12 takes precedence) · CPC title
adapted for baking · CPC title
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