Semiconductor device

Patent metadata

Field	Value
Publication number	US-12328933-B2
Application number	US-202217665257-A
Country	US
Kind code	B2
Filing date	Feb 4, 2022
Priority date	Aug 16, 2021
Publication date	Jun 10, 2025
Grant date	Jun 10, 2025

Abstract

According to an aspect of the present disclosure, a semiconductor device includes a substrate including an IGBT region, and a diode region, a surface electrode provided on a top surface of the substrate and a back surface electrode provided on a back surface on an opposite side to the top surface of the substrate, wherein the diode region includes a first portion formed to be thinner than the IGBT region by the top surface of the substrate being recessed, and a second portion provided on one side of the first portion and thicker than the first portion.

First claim

The invention claimed is:

1. A semiconductor device, comprising:
a substrate including an IGBT region, and a diode region;
a surface electrode provided on a top surface of the substrate; and
a back surface electrode provided on a back surface on an opposite side to the top surface of the substrate,
wherein the diode region includes a first portion formed to be thinner than the IGBT region by the top surface of the substrate having a recess, a second portion provided on one side of the first portion and thicker than the first portion, and a third portion provided on another side of the first portion and thicker than the first portion,
a top surface of the second portion and a top surface of the IGBT region form a same plane,
an anode layer of the diode region is provided along an entire side surface of the substrate connecting the first portion and the second portion and along an entire side surface of the substrate connecting the first portion and the third portion.

2. The semiconductor device according to claim 1 , wherein the anode layer of the diode region is provided along a top surface of the first portion.

3. The semiconductor device according to claim 2 , wherein of the anode layer, a portion provided along the top surface of the first portion, and a portion provided along the side surface of the substrate connecting the first portion and the second portion are separated.

4. The semiconductor device according to claim 1 ,
wherein the second portion is adjacent to the IGBT region.

5. The semiconductor device according to claim 1 ,
wherein the IGBT region includes a collector layer on the back surface side of the substrate, and
the collector layer protrudes into the diode region.

6. The semiconductor device according to claim 1 , wherein the first portion includes an other anode layer and a Schottky contact layer on an uppermost layer.

7. The semiconductor device according to claim 1 ,
wherein the first portion includes an other anode layer on an uppermost layer of the first portion, and
the second portion includes a Schottky contact layer on an uppermost layer of the second portion.

8. The semiconductor device according to claim 1 , wherein at least part of the side surface of the substrate connecting the first portion and the second portion is covered with an oxide film.

9. The semiconductor device according to claim 1 , wherein the side surface of the substrate connecting the first portion and the second portion is formed of a curved surface protruding outward.

10. The semiconductor device according to claim 1 ,
wherein the diode region includes a cathode layer on the back surface side of the substrate, and
the cathode layer is thinned out.

11. The semiconductor device according to claim 10 , wherein the cathode layer is thinned out more toward the IGBT region side.

12. The semiconductor device according to claim 1 ,
wherein the diode region includes a cathode layer on the back surface side of the substrate, and
the cathode layer is provided avoiding a place directly under an other anode layer that is included in the first portion.

13. The semiconductor device according to claim 1 , wherein the substrate is made with a wide band gap semiconductor.

14. The semiconductor device according to claim 13 , wherein the wide band gap semiconductor is silicon carbide, gallium-nitride-based material or diamond.

Assignees

• Mitsubishi Electric Corp

Inventors

• Fujii Hidenori
• Soneda Shinya
• Nakatani Takahiro

Classifications

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H10D62/8325

  Silicon carbide · CPC title

• H10D62/8303

  Diamond · CPC title

• H10D12/481

  having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs · CPC title

• H10D8/60

  Schottky-barrier diodes · CPC title