Polycrystalline semiconductor resistor

Patent metadata

Field	Value
Publication number	US-12328883-B2
Application number	US-202217805696-A
Country	US
Kind code	B2
Filing date	Jun 7, 2022
Priority date	Jun 7, 2022
Publication date	Jun 10, 2025
Grant date	Jun 10, 2025

Abstract

In one embodiment, a semiconductor die includes a polycrystalline semiconductor resistor structure (poly resistor structure). The poly resistor structure includes a resistive path between a first terminal and a second terminal. The poly resistor structure includes a first region having a net first conductivity type dopant concentration located in the resistance path and a second region having a net second conductivity type dopant concentration located in the resistance path. A silicide structure is located on both a first portion of the first region and a first portion of the second region to electrically connect the first portion of the first region and the first portion of the second region. In some embodiments, poly resistor structures with different conductivity type regions can be connected together.

First claim

What is claimed is:

1. A semiconductor die comprising:
a polycrystalline semiconductor resistor structure including a resistance path between a first terminal and a second terminal, the polycrystalline semiconductor resistor structure comprising:
a first region having a net first conductivity type dopant concentration located in the resistance path;
a second region having a net second conductivity type dopant concentration located in the resistance path, the second conductivity type is opposite the first conductivity type;

a silicide structure located on both a first portion of the first region and a first portion of the second region to electrically connect the first portion of the first region and the first portion of the second region;
wherein the first region includes a second portion that is not silicided and the second region includes a second portion that is not silicided;
wherein the silicide structure is located at the first terminal of the polycrystalline resistive structure.

2. The semiconductor die of claim 1 wherein the second portion of the first region has a silicide blocking material located on it and the second portion of the second region has a silicide blocking material located on it.

3. The semiconductor die of claim 1 wherein the silicide structure does not have a contact structure in electrical contact with it.

4. The semiconductor die of claim 1 wherein the first region and the second region abut each other.

5. The semiconductor die of claim 1 wherein the first region and the second region are located in series with each other in the resistance path.

6. A semiconductor die comprising:
a polycrystalline semiconductor resistor structure including a resistance path between a first terminal and a second terminal, the polycrystalline semiconductor resistor structure comprising:
a first region having a net first conductivity type dopant concentration located in the resistance path;
a second region having a net second conductivity type dopant concentration located in the resistance path, the second conductivity type is opposite the first conductivity type;

a silicide structure located on both a first portion of the first region and a first portion of the second region to electrically connect the first portion of the first region and the first portion of the second region;
wherein the first region includes a second portion that is not silicided and the second region includes a second portion that is not silicided;
wherein the first region and the second region are located in parallel with each other in the resistance path.

7. A semiconductor die comprising:
a resistive element including one of more polycrystalline semiconductor resistor structures coupled together to provide a resistance path between a first terminal and a second terminal, the one or more polycrystalline semiconductor resistor structures comprising:
one or more regions each including an unsilicided portion having a net N type dopant concentration located in the resistance path;
one or more regions each having an unsilicided portion having a net P type dopant concentration located in the resistance path;
wherein a ratio of a total volume of the one or more unsilicided portions of the one or more regions having a net N type dopant concentration to a total volume of the one or more unsilicided portions of the one or more regions having a net P type dopant concentration is in a range from 1.1:1 to 5:1.

8. A semiconductor die comprising:
a polycrystalline semiconductor resistor structure including a resistance path between a first terminal and a second terminal, the polycrystalline semiconductor resistor structure comprising:
a first region having a net first conductivity type dopant concentration located in the resistance path;
a second region having a net second conductivity type dopant concentration located in the resistance path, the second conductivity type is opposite the first conductivity type;

a silicide structure located on both a first portion of the first region and a first portion of the second region to electrically connect the first portion of the first region and the first portion of the second region;
wherein the first region includes a second portion that is not silicided and the second region includes a second portion that is not silicided;
wherein the silicide structure has a contact structure in electrical contact with the silicide structure.

9. The semiconductor die of claim 1 wherein the polycrystalline semiconductor resistor structure includes a third region having a net first conductivity type dopant concentration located in the resistance path.

10. The semiconductor die of claim 9 wherein the first region, the second, and the third region are located in series with each other in the resistance path.

11. A semiconductor die comprising:
a polycrystalline semiconductor resistor structure including a resistance path between a first terminal and a second terminal, the polycrystalline semiconductor resistor structure comprising:
a first region having a net first conductivity type dopant concentration located in the resistance path;
a second region having a net second conductivity type dopant concentration located in the resistance path, the second conductivity type is opposite the first conductivity type;

a silicide structure located on both a first portion of the first region and a first portion of the second region to electrically connect the first portion of the first region and the first portion of the second region;
wherein the first region includes a second portion that is not silicided and the second region includes a second portion that is not silicided;
wherein the polycrystalline semiconductor resistor structure includes a third region having a net first conductivity type dopant concentration located in the resistance path;
wherein the first region, the second region, and the third region are located in parallel in the resistance path.

12. The semiconductor die of claim 9 wherein the second region and the third region are electrically connected to each other by a silicide structure located on a portion of the second region and a portion of the third region.

13. The semiconductor die of claim 12 wherein the silicide structure located on a portion of the second region and a portion of the third region does not have a contact structure in electrical contact with it.

14. A semiconductor die comprising:
a polycrystalline semiconductor resistor structure including a resistance path between a first terminal and a second terminal, the polycrystalline semiconductor resistor structure comprising:
a first region having a net first conductivity type dopant concentration located in the resistance path;
a second region having a net second conductivity type dopant concentration located in the resistance path, the second conductivity type is opposite the first conductivity type;

a silicide structure located on both a first portion of the first region and a first portion of the second region to electrically connect the first portion of the first region and the first portion of the second region;
wherein the first region includes a second portion that is not silicided and the second region includes a second portion that is not silicided;
wherein the polycrystalline semiconductor resistor structure includes a third region having a net first conductivity type dopant concentration located in the resistance path;
wherein the second region and the third region are electrically connected to each other by a silicide structure located on a portion of the second region and a portion of the third region;

Assignees

• Nxp Usa Inc

Inventors

• Zhu Ronghua
• Claes Jan
• Cheng Xu
• Lin Xin
• He Jianhua
• Roggenbauer Todd
• Boyd James Gordon

Classifications

• H10W44/401

  Resistive arrangements (H10W44/20, H10W42/80 take precedence) · CPC title

• H10D1/43

  Resistors having PN junctions · CPC title

• H10D30/6743

  Silicon · CPC title

• H10D30/6737

  characterised by the electrode materials · CPC title

• H10D62/83

  being Group IV materials, e.g. B-doped Si or undoped Ge · CPC title