Redistribution layer structure
US-2022189862-A1 · Jun 16, 2022 · US
US12322686B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12322686-B2 |
| Application number | US-202117531777-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 21, 2021 |
| Priority date | Dec 15, 2020 |
| Publication date | Jun 3, 2025 |
| Grant date | Jun 3, 2025 |
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A redistribution layer structure is provided. The redistribution layer structure includes a first metal layer, a first dielectric layer disposed on the first metal layer, a second metal layer disposed on the first dielectric layer, and a second dielectric layer disposed on the second metal layer. A coefficient of thermal expansion of the first dielectric layer is less than a coefficient of thermal expansion of the second dielectric layer.
Opening claim text (preview).
What is claimed is: 1. A package structure, comprising: a glass substrate; a redistribution layer structure disposed on the glass substrate; and an electronic component disposed on the redistribution layer structure, wherein the redistribution layer structure comprising: a first metal layer disposed on the glass substrate; a first dielectric layer disposed on the first metal layer; a second metal layer disposed on the first dielectric layer; a second dielectric layer disposed on the second metal layer; a third metal layer disposed on the second dielectric layer; a third dielectric layer disposed on the third metal layer; a fourth metal layer disposed on the third dielectric layer; and a fourth dielectric layer disposed on the fourth metal layer, wherein, a coefficient of thermal expansion of the first dielectric layer is less than a coefficient of thermal expansion of the second dielectric layer, the coefficient of thermal expansion of the second dielectric layer is less than a coefficient of thermal expansion of the third dielectric layer, and the coefficient of thermal expansion of the third dielectric layer is less than a coefficient of thermal expansion of the fourth dielectric layer, wherein a thickness of the first dielectric layer is greater than a thickness of the second dielectric layer, and the thickness of the second dielectric layer is greater than a thickness of the third dielectric layer. 2. The package structure according to claim 1 , wherein the thickness of the first dielectric layer is 11 μm to 19 μm. 3. The package structure of claim 1 , wherein a Young's modulus of the first dielectric layer is 3 GPa to 5 GPa. 4. The package structure of claim 1 , wherein the coefficient of thermal expansion of the first dielectric layer is 20 ppm/° C. to 40 ppm/° C. 5. The package structure according to claim 1 , wherein the thickness of the second dielectric layer is 9 μm to 11 μm. 6. The package structure according to claim 1 , wherein a thickness of the first metal layer is 4 μm to 13 μm. 7. The package structure of claim 1 , wherein a Young's modulus of the first metal layer is 90 GPa to 120 GPa. 8. The package structure of claim 1 , wherein a coefficient of thermal expansion of the first metal layer is 16 ppm/° C. to 20 ppm/° C. 9. The package structure according to claim 1 , further comprising: a top connector disposed on the fourth dielectric layer, and the top connector is electrically connected to the fourth metal layer. 10. The package structure according to claim 1 , wherein the glass substrate comprises an electronic component and an encapsulation material. 11. The package structure according to claim 1 , further comprising a debonding layer disposed between the glass substrate and the redistribution layer structure.
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