Redistribution layer structure

US12322686B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12322686-B2
Application numberUS-202117531777-A
CountryUS
Kind codeB2
Filing dateNov 21, 2021
Priority dateDec 15, 2020
Publication dateJun 3, 2025
Grant dateJun 3, 2025

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A redistribution layer structure is provided. The redistribution layer structure includes a first metal layer, a first dielectric layer disposed on the first metal layer, a second metal layer disposed on the first dielectric layer, and a second dielectric layer disposed on the second metal layer. A coefficient of thermal expansion of the first dielectric layer is less than a coefficient of thermal expansion of the second dielectric layer.

First claim

Opening claim text (preview).

What is claimed is: 1. A package structure, comprising: a glass substrate; a redistribution layer structure disposed on the glass substrate; and an electronic component disposed on the redistribution layer structure, wherein the redistribution layer structure comprising: a first metal layer disposed on the glass substrate; a first dielectric layer disposed on the first metal layer; a second metal layer disposed on the first dielectric layer; a second dielectric layer disposed on the second metal layer; a third metal layer disposed on the second dielectric layer; a third dielectric layer disposed on the third metal layer; a fourth metal layer disposed on the third dielectric layer; and a fourth dielectric layer disposed on the fourth metal layer, wherein, a coefficient of thermal expansion of the first dielectric layer is less than a coefficient of thermal expansion of the second dielectric layer, the coefficient of thermal expansion of the second dielectric layer is less than a coefficient of thermal expansion of the third dielectric layer, and the coefficient of thermal expansion of the third dielectric layer is less than a coefficient of thermal expansion of the fourth dielectric layer, wherein a thickness of the first dielectric layer is greater than a thickness of the second dielectric layer, and the thickness of the second dielectric layer is greater than a thickness of the third dielectric layer. 2. The package structure according to claim 1 , wherein the thickness of the first dielectric layer is 11 μm to 19 μm. 3. The package structure of claim 1 , wherein a Young's modulus of the first dielectric layer is 3 GPa to 5 GPa. 4. The package structure of claim 1 , wherein the coefficient of thermal expansion of the first dielectric layer is 20 ppm/° C. to 40 ppm/° C. 5. The package structure according to claim 1 , wherein the thickness of the second dielectric layer is 9 μm to 11 μm. 6. The package structure according to claim 1 , wherein a thickness of the first metal layer is 4 μm to 13 μm. 7. The package structure of claim 1 , wherein a Young's modulus of the first metal layer is 90 GPa to 120 GPa. 8. The package structure of claim 1 , wherein a coefficient of thermal expansion of the first metal layer is 16 ppm/° C. to 20 ppm/° C. 9. The package structure according to claim 1 , further comprising: a top connector disposed on the fourth dielectric layer, and the top connector is electrically connected to the fourth metal layer. 10. The package structure according to claim 1 , wherein the glass substrate comprises an electronic component and an encapsulation material. 11. The package structure according to claim 1 , further comprising a debonding layer disposed between the glass substrate and the redistribution layer structure.

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Classifications

  • used as a support during the manufacture of self-supporting substrates · CPC title

  • using temporarily an auxiliary support · CPC title

  • of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04) · CPC title

  • the multiple chips being integrally enclosed · CPC title

  • Organic materials · CPC title

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What does patent US12322686B2 cover?
A redistribution layer structure is provided. The redistribution layer structure includes a first metal layer, a first dielectric layer disposed on the first metal layer, a second metal layer disposed on the first dielectric layer, and a second dielectric layer disposed on the second metal layer. A coefficient of thermal expansion of the first dielectric layer is less than a coefficient of ther…
Who is the assignee on this patent?
Innolux Corp
What technology area does this patent fall under?
Primary CPC classification H10W70/685. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 03 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 9 related publications on this page (citations in our corpus or others sharing the same primary CPC).