Packaged transistor amplifiers that include integrated passive device matching structures having distributed shunt inductances

Patent metadata

Field	Value
Publication number	US-12315829-B2
Application number	US-202117340492-A
Country	US
Kind code	B2
Filing date	Jun 7, 2021
Priority date	Jun 7, 2021
Publication date	May 27, 2025
Grant date	May 27, 2025

Abstract

A packaged RF transistor amplifier includes an RF transistor amplifier die having a first terminal, a first lead, an integrated passive device that includes a first series microstrip transmission line, a first bond wire coupled between the first terminal and the first series microstrip transmission line, and a second bond wire coupled between the first series microstrip transmission line and the first lead.

First claim

That which is claimed is:

1. A packaged radio frequency (“RF”) transistor amplifier, comprising:
an RF transistor amplifier die having a first terminal and a second terminal;
a first lead;
a second lead;
an integrated passive device that includes a first series microstrip transmission line;
a first bond wire coupled between the first terminal and the first series microstrip transmission line; and
a second bond wire coupled between the first series microstrip transmission line and the first lead, and
an electrical connection between the second lead and the second terminal,
wherein the integrated passive device is interposed between the RF transistor amplifier die and the first lead, and
wherein the first lead comprises an output lead.

2. The packaged RF transistor amplifier of claim 1 , wherein the first bond wire, the first series microstrip transmission line and the second bond wire comprise an electrical path between the first terminal and the first lead.

3. The packaged RF transistor amplifier of claim 1 , further comprising a shunt inductor-capacitor (“LC”) circuit electrically connected between a bond pad on the integrated passive device and electrical ground.

4. The packaged RF transistor amplifier of claim 3 , wherein the integrated passive device further includes a first shunt microstrip transmission line that is part of the shunt LC circuit.

5. The packaged RF transistor amplifier of claim 1 , wherein the integrated passive device further includes a capacitor that is part of the shunt LC circuit.

6. The packaged RF transistor amplifier of claim 5 , further comprising a third bond wire that is electrically coupled in series with the first shunt microstrip transmission line.

7. The packaged RF transistor amplifier of claim 6 , wherein the first bond wire extends in a first direction and the third bond wire extends in a third direction that forms an oblique angle with the first direction.

8. The packaged RF transistor amplifier of claim 6 , wherein the third bond wire crosses over the first series microstrip transmission line when the packaged RF transistor amplifier is viewed along an axis that extends perpendicular to an upper surface of the integrated passive device.

9. The packaged RF transistor amplifier of claim 1 , wherein the integrated passive device further includes a first shunt microstrip transmission line that is coupled between the first terminal and electrical ground.

10. The packaged RF transistor amplifier of claim 9 , wherein the integrated passive device further includes a second series microstrip transmission line, and wherein the first shunt microstrip transmission line is between the first series microstrip transmission line and the second series microstrip transmission line.

11. A packaged radio frequency (“RF”) transistor amplifier, comprising:
an RF transistor amplifier die having a first terminal;
a first lead;
a capacitor having a first electrode and a second electrode;
an integrated passive device that includes a first series transmission line that forms part of an electrical path between the first terminal and the first lead and a first shunt microstrip transmission line that is electrically coupled between the first terminal and the first electrode of the capacitor; and
a package,
wherein the RF transistor amplifier die and the integrated passive device are within the package, and the first lead extends from an interior of the package to outside the package.

12. The packaged RF transistor amplifier of claim 11 , wherein the electrical path further comprises a first bond wire that couples the first terminal to the first series transmission line and a second bond wire that couples the first series transmission line to the first lead.

13. The packaged RF transistor amplifier of claim 12 , wherein the second electrode is coupled to electrical ground.

14. The packaged RF transistor amplifier of claim 13 , further comprising a third bond wire that is electrically coupled in series with the first shunt microstrip transmission line.

15. The packaged RF transistor amplifier of claim 14 , wherein the first bond wire extends in a first direction and the third bond wire extends in a third direction that forms an oblique angle with the first direction.

16. The packaged RF transistor amplifier of claim 14 , wherein the third bond wire crosses over the first series microstrip transmission line when the packaged RF transistor amplifier is viewed along an axis that extends perpendicular to an upper surface of the integrated passive device.

17. The packaged RF transistor amplifier of claim 11 , wherein the first series microstrip transmission line is a first of a plurality of series microstrip transmission lines included in the integrated passive device, and wherein the first shunt microstrip transmission line is interposed between two of the series microstrip transmission lines.

18. The packaged RF transistor amplifier of claim 11 , wherein the first lead comprises an output lead, and the first terminal comprises a drain terminal, and the capacitor is mounted on the integrated passive device.

19. A packaged radio frequency (“RF”) transistor amplifier, comprising:
an RF transistor amplifier die having a first terminal;
a first lead;
an integrated passive device that is interposed between the RF transistor amplifier die and the first lead;
a first bond wire that extends between the first terminal and the integrated passive device; and
a third bond wire that has first and second ends that are mounted on the integrated passive device,
wherein the first bond wire extends in a first direction and the third bond wire extends in a third direction that forms an oblique angle with the first direction.

20. The packaged RF transistor amplifier of claim 19 , wherein the integrated passive device further includes a first shunt microstrip transmission line that is coupled to the third bond wire.

21. The packaged RF transistor amplifier of claim 1 , wherein the first lead comprises an output lead and the first terminal comprises a drain terminal.

22. The packaged RF transistor amplifier of claim 19 , wherein the first lead comprises an output lead and the first terminal comprises a drain terminal.

23. The packaged RF transistor amplifier of claim 19 , wherein the integrated passive device includes a first series microstrip transmission line.

Assignees

• Macom Tech Solutions Holdings Inc

Inventors

• Rice David
• Fisher Jeremy

Classifications

• H10W90/755

  between a chip and a laterally-adjacent insulating package substrate, interpose or RDL · CPC title

• H10W44/234

  Arrangements for impedance matching · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W70/63

  Vias, e.g. via plugs · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title