Doherty power amplifier devices having intergrated output combining networks

Patent metadata

Field	Value
Publication number	US-11190146-B2
Application number	US-202016737228-A
Country	US
Kind code	B2
Filing date	Jan 8, 2020
Priority date	Nov 19, 2019
Publication date	Nov 30, 2021
Grant date	Nov 30, 2021

Abstract

Doherty power amplifier (PA) devices (e.g., packages and modules) including integrated output combining networks are disclosed. In embodiments, the Doherty PA device includes a first amplifier die having a first transistor with a first output terminal at which a first amplified signal is generated, a second amplifier die having a second transistor with a second output terminal at which a second amplified signal is generated, and an output combining network. The output combining network includes, in turn, a combining node integrally formed with the second amplifier die and electrically coupled to the second output terminal. At least one die-to-die bond wire electrically couples the first output terminal to the combining node. The at least one die-to-die bond wire has an electrical length, which is results in a 90 degree phase shift imparted to the first amplified signal between the first output terminal and the combining node.

First claim

What is claimed is:

1. A Doherty power amplifier (PA) device, comprising:
a first amplifier die having a first transistor with a first output terminal at which a first amplified signal is generated;
a second amplifier die having a second transistor with a second output terminal at which a second amplified signal is generated; and
an output combining network, comprising:
a combining node integrally formed with the second amplifier die and electrically coupled to the second output terminal;
at least one die-to-die bond wire connected between the first amplifier die and the second amplifier die to electrically couple the first output terminal to the combining node, the at least one die-to-die bond wire having an electrical length resulting in a 90 degree phase shift imparted to the first amplified signal between the first output terminal and the combining node;
a transmission line disposed between the first and second amplifier dies, wherein the transmission line includes an intermediate portion coupled to an input end portion that includes multiple prongs extending from the intermediate portion toward the second amplifier die;
multiple bond pads at ends of the multiple prongs; and
a plurality of die-to substrate bond wires coupled between the second output terminal and the multiple bond pads.

2. The Doherty PA device of claim 1 , wherein the first amplifier die and the second amplifier die comprise a carrier amplifier die and a peaking amplifier die, respectively.

3. The Doherty PA device of claim 1 , wherein the first amplifier die comprises a first drain manifold; and
wherein the second amplifier die comprises a second drain manifold integrally formed with the combining node.

4. The Doherty PA device of claim 3 , wherein the first drain manifold and the second drain manifold each extend substantially parallel with a first axis;
wherein the first transistor and second transistor further comprise a first gate manifold and a second gate manifold, respectively; and
wherein the first and second drain manifold are located between the first and second gate manifolds, as taken along a second axis perpendicular to the first axis.

5. The Doherty PA device of claim 1 , further comprising:
a radio frequency (RF) output terminal.

6. The Doherty PA device of claim 5 , wherein the output combining network further comprises:
a conductive base flange; and
a substrate mounted on the conductive base flange between the carrier amplifier die and the peaking amplifier die, and
wherein the first and second transistor dies are directly mounted on the conductive base flange, and the transmission line is formed on the substrate and electrically couples the die-to-substrate bond wires to the RF output terminal, the transmission line having an output end portion coupled to the intermediate portion and to the RF output terminal.

7. The Doherty PA device of claim 6 , wherein the die-to-die bond wire extends over at least a portion of the input end portion of the transmission line, as viewed along an axis orthogonal to an upper surface of the substrate.

8. The Doherty PA device of claim 6 , further comprising a package body in which the first amplifier die, the second amplifier die, and the output combining network are housed;
wherein the substrate comprises a printed circuit board embedded in the package body.

9. The Doherty PA device of claim 6 , wherein the substrate comprises:
a first outer wing section on which a portion of a first input matching network is formed;
a second outer wing section on which a portion of a second input matching network is formed; and
an intermediate section between the first outer wing section and the second outer wing section, the transmission line at least partially formed on the intermediate section of the substrate.

10. The Doherty PA device of claim 6 , wherein the transmission line is configured to raise an impedance of the combined RF output signal from a first value at the input end portion to a second value greater than the first value at the output end portion.

11. The Doherty PA device of claim 10 , wherein the second value is between 40 and 60 ohms.

12. The Doherty PA device of claim 1 , further comprising:
a substrate; and
a first harmonic termination circuit electrically coupled between: (i) the substrate and the first output terminal, or (ii) the substrate and the second output terminal.

13. The Doherty PA device of claim 12 , wherein the first harmonic termination comprises:
a shunt capacitor coupled to the substrate; and
at least one die-to-substrate bond wire electrically coupling the first or second output terminal to the shunt capacitor.

14. A Doherty power amplifier (PA) device, comprising:
a radio frequency (RF) output terminal;
a peaking amplifier die having a peaking output terminal at which an amplified peaking signal is generated;
a carrier amplifier die having a carrier output terminal at which an amplified carrier signal is generated;
a substrate adjacent the peaking amplifier die and the carrier amplifier die;
a transmission line formed on the substrate, the transmission line comprising:
an intermediate portion,
an input end portion coupled to the intermediate portion and located between the peaking die amplifier die and the carrier amplifier die, as seen looking downwardly on the substrate along a first axis orthogonal to a frontside of the substrate, wherein the input end portion includes multiple prongs extending from the intermediate portion toward the peaking amplifier die and multiple bond pads at ends of the multiple prongs, and
an output end portion coupled to the intermediate portion and electrically coupled to the RF output terminal;

a first bond wire or bond wire array electrically connecting the carrier output terminal to the peaking output terminal such that amplified peaking signal and the amplified carrier signal combine to yield a combined RF output signal at the peaking output terminal; and
a second bond wire or bond wire array electrically connecting the peaking output terminal to the multiple bond pads of the input end portion of the transmission line such that the combined RF output signal is transmitted from the peaking output terminal, through the second bond wire or bond wire array, through the transmission line, and to the RF output terminal during operation of the Doherty PA device.

15. The Doherty PA device of claim 14 , further comprising:
a shunt capacitance coupled to the substrate; and
a third bond wire or bond wire array electrically coupling the peaking output terminal or the carrier output terminal to the shunt capacitance and combining with the shunt capacitance to form a harmonic termination circuit.

16. The Doherty PA device of claim 14 , wherein at least a portion of the first bond wire or bond wire array extends over the input end portion of the transmission line, as seen looking downward on the substrate along the first axis.

17. The Doherty PA device of claim 14 , wherein the peaking amplifier die and carrier amplifier die further comprise a peaking input terminal and a carrier input terminal, respectively;
wherein the peaking output terminal and the carrier output terminal are located between the peaking input terminal and the carrier input terminal, as taken along a second axis perpendicular to the first axis.

18. The Doherty PA device of claim 14 , wherein the Doherty PA device comprises a Doherty PA package having a package body;
wherein the RF output terminal comprises an RF output lead extending from the package body; and
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Assignees

• Nxp Usa Inc

Inventors

• Srinidhi Embar Ramanujam
• Al Seragi Ebrahim M
• Lamy Anthony
• Uscola Ricardo
• Holmes Damon G

Classifications

• H03F2203/21106

  An input signal being distributed in parallel over the inputs of a plurality of power amplifiers · CPC title

• H03F3/245

  with semiconductor devices only · CPC title

• H03F3/211

  using a combination of several amplifiers (H03F3/60 takes precedence) · CPC title

• H03F1/0288 Primary

  using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers · CPC title

• H03F1/565

  using inductive elements · CPC title