Stacked structure and semiconductor manufacturing apparatus member

Patent metadata

Field	Value
Publication number	US-12315757-B2
Application number	US-202117201355-A
Country	US
Kind code	B2
Filing date	Mar 15, 2021
Priority date	Mar 27, 2020
Publication date	May 27, 2025
Grant date	May 27, 2025

Abstract

A stacked structure includes a first structure formed of a composite sintered body that contains AlN and MgAl 2 O 4 as main phases, and a second structure formed of a ceramic sintered body and stacked on and bonded to the first structure. A difference in linear thermal expansion coefficient between the first structure and the second structure is less than or equal to 0.3 ppm/K.

First claim

The invention claimed is:

1. A stacked structure, comprising:
a first structure formed of a composite sintered body that contains AlN and MgAl 2 O 4 as main phases containing 15% or more and 70% or less by mass of MgAl 2 O 4 and 30% or more and 85% or less by mass of AlN, wherein the main phases comprise from greater than or equal to 95 wt. % to less than or equal to 100 wt. % of the composite sintered body, and
a second structure formed of a ceramic sintered body and stacked on and bonded to said first structure, wherein the ceramic sintered body comprises a) 95 mass % or more of AlN and aluminum yttrium oxide (Al 5 Y 3 O 12 ) as constituent phases and contains from 50 mass % to 80 mass % of Al 5 Y 3 O 12 and from 20 mass % to 50 mass % of AlN, b) 70 mass % or more and 90 mass % or less of AlON as a constituent phase, or c) 95 mass % or more of AlON and SiAlON as constituent phases and contains from 80 mass % to 95 mass % of AlON and from 5 mass % to 20 mass % of SiAlON,
wherein a difference in linear thermal expansion coefficient between said first structure and said second structure is less than or equal to 0.3 ppm/K.

2. The stacked structure according to claim 1 , wherein
said composite sintered body of said first structure contains 25% or more and 60% or less by mass of MgAl 2 O 4 and 45% or more and 75% or less by mass of AlN.

3. The stacked structure according to claim 1 , wherein
said composite sintered body of said first structure has volume resistivity higher than or equal to 7.0×10 7 Ω·cm at 700° C.

4. The stacked structure according to claim 1 , wherein
said composite sintered body of said first structure has thermal conductivity higher than or equal to 15 W/(m·K) at ambient temperature.

5. The stacked structure according to claim 1 , wherein
thermal conductivity of said ceramic sintered body of said second structure at ambient temperature is lower by 10 W/(m·K) or more than thermal conductivity of said composite sintered body of said first structure at ambient temperature.

6. A semiconductor manufacturing apparatus member used in a semiconductor manufacturing apparatus, comprising:
the stacked structure according to claim 1 .

7. The semiconductor manufacturing apparatus member according to claim 6 , comprising:
a substrate heating part that includes said first structure of said stacked structure and supports and heats a substrate; and
a supporter that includes said second structure of said stacked structure and is bonded to said substrate heating part to support said substrate heating part.

Assignees

• Ngk Insulators Ltd

Inventors

• NAGAI Asumi
• Nishimura Noboru
• Yamaguchi Hirofumi

Classifications

• H10P72/0432 Primary

  mainly by conduction · CPC title

• H10P72/7616 Primary

  characterised by a coating, a hardness or a material · CPC title

• B32B18/00

  Layered products essentially comprising ceramics, e.g. refractory products · CPC title

• B32B2307/302

  Conductive · CPC title

• C04B2235/9607

  Thermal properties, e.g. thermal expansion coefficient · CPC title