Semiconductor processing apparatus and semiconductor processing method using the same

Patent metadata

Field	Value
Publication number	US-12312690-B2
Application number	US-202217714363-A
Country	US
Kind code	B2
Filing date	Apr 6, 2022
Priority date	Jul 5, 2021
Publication date	May 27, 2025
Grant date	May 27, 2025

Abstract

A semiconductor processing apparatus includes an outer tube, an inner tube in the outer tube and providing a process space, and a nozzle between the outer tube and the inner tube. The nozzle provides an internal passage. The inner tube provides a slit. The nozzle provides a plurality of holes. The plurality of holes are vertically spaced apart from each other. The slit vertically extends to expose at least two of the plurality of holes. The internal passage is connected to the process space through the slit and the plurality of holes.

First claim

What is claimed is:

1. A semiconductor processing apparatus, comprising:
an outer tube;
an inner tube in the outer tube, the inner tube providing a process space; and
a first nozzle and a second nozzle between the outer tube and the inner tube, each of the first nozzle and the second nozzle providing an internal passage,
wherein the inner tube provides a first slit and a second slit spaced apart from each other in a horizontal direction,
wherein each of the first nozzle and the second nozzle provides a plurality of holes,
wherein the plurality of holes of the first nozzle face the first slit,
wherein the plurality of holes of the second nozzle face the second slit,
wherein the plurality of holes are vertically spaced apart from each other,
wherein the first slit vertically extends to expose at least two holes of the plurality of holes of the first nozzle,
wherein the second slit vertically extends to expose at least two holes of the plurality of holes of the second nozzle, and
wherein the internal passage is connected to the process space through the first and second slits and the plurality of holes.

2. The apparatus of claim 1 ,
wherein the first slit vertically extends to expose all of the plurality of holes of the first nozzle.

3. The apparatus of claim 1 ,
wherein a width of the first slit is between about 5 mm and about 60 mm.

4. The apparatus of claim 1 ,
wherein the first nozzle is spaced apart from an outer surface of the inner tube.

5. The apparatus of claim 4 , further comprising:
a nozzle isolation member associated with the outer surface of the inner tube,
wherein the nozzle isolation member provides a nozzle placement space that extends vertically,
wherein the nozzle placement space is connected through the first and second slits to the process space, and
wherein the first and second nozzles are in the nozzle placement space.

6. The apparatus of claim 1 ,
wherein the plurality of holes of the first nozzle injects a first process gas,
wherein the plurality of holes of the second nozzle injects a second process gas, and
wherein the first process gas and the second process gas are different from each other.

7. The apparatus of claim 1 ,
wherein a width at a top end of the first slit is different from a width at a bottom end of the first slit.

8. The apparatus of claim 7 ,
wherein a width of the first slit increases in a direction from the top end to the bottom end.

9. A semiconductor processing apparatus, comprising:
an outer tube;
an inner tube in the outer tube; and
a first nozzle and a second nozzle that vertically respectively extends between the outer tube and the inner tube,
wherein the inner tube provides a first slit and a second slit that respectively extends vertically,
wherein each of the first and second nozzles provides a hole,
wherein the hole of the first nozzle face the first slit and is exposed through the first slit,
wherein the hole of the second nozzle face the second slit and is exposed through the second slit,
wherein a ratio between a height of the first slit and a width at a bottom end of the first slit is greater than about 1, and
wherein the first nozzle is spaced apart from an outer surface of the inner tube.

10. The apparatus of claim 9 ,
wherein the first slit includes a first portion connected to the outer surface of the inner tube and a second portion connected to an inner surface of the inner tube, and
wherein a width of the first portion of the first slit is different from a width of the second portion of the first slit.

11. The apparatus of claim 10 ,
wherein a width of the first slit increases in a direction from the first portion connected to the outer surface of the inner tube toward the second portion connected to the inner surface of the inner tube.

12. The apparatus of claim 9 ,
wherein the hole is provided in plural, and
wherein the plurality of holes are vertically spaced apart from each other.

13. The apparatus of claim 12 ,
wherein the first slit vertically extends to expose all of the plurality of holes of the first nozzle.

14. The apparatus of claim 9 , further comprising:
a nozzle isolation member that is connected to the outer surface of the inner tube and extends vertically,
wherein the nozzle isolation member provides a nozzle placement space,
wherein the nozzle placement space is connected through the first and second slits to an inside of the inner tube, and
wherein the first and second nozzles is inserted into the nozzle isolation member.

15. The apparatus of claim 14 ,
wherein the hole is provided in plural,
wherein the plurality of holes of the first nozzle injects a first process gas,
wherein the plurality of holes of the second nozzle injects a second process gas, and
wherein the first process gas and the second process gas are different from each other.

16. The apparatus of claim 15 , further comprising:
a third nozzle and a fourth nozzle that vertically respectively extends between the outer tube and the inner tube,
wherein the inner tube provides a third slit and a fourth slit,
wherein the nozzle isolation member includes:
a first nozzle isolation member; and
a second nozzle isolation member,

wherein the first nozzle isolation member is connected through the first and second slits to the inside of the inner tube,
wherein the second nozzle isolation member is connected through the third and fourth slits to the inside of the inner tube,
wherein the first and second nozzles are inserted into the first nozzle isolation member, and
wherein the third and fourth nozzles are inserted into the second nozzle isolation member.

17. The apparatus of claim 9 ,
wherein a width at a top end of the first slit is different from the width at the bottom end of the first slit.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Minju
• Yong Sookyeom
• IE Sangyub

Classifications

• H10P72/12

  Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements · CPC title

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title

• C23C16/45544

  characterized by the apparatus · CPC title

• C23C16/4583

  the substrate being supported substantially horizontally · CPC title

• C23C16/45546 Primary

  specially adapted for a substrate stack in the ALD reactor · CPC title