Production method for high-purity hydrogen chloride gas

US12312247B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12312247-B2
Application numberUS-202017780311-A
CountryUS
Kind codeB2
Filing dateDec 3, 2020
Priority dateDec 9, 2019
Publication dateMay 27, 2025
Grant dateMay 27, 2025

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Abstract

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A method for producing a high-purity hydrogen chloride gas comprises performing a purification process that includes the steps 1) to 3) below on a byproduct hydrogen chloride gas: 1) a crude hydrochloric acid generation step of allowing water to absorb the byproduct hydrogen chloride gas; 2) a volatile organic impurity-removed hydrochloric acid generation step of bringing the crude hydrochloric acid obtained in the step 1) into contact with an inert gas at a liquid temperature of 20 to 45° C. to dissipate volatile organic impurities; and 3) a high-purity hydrogen chloride gas generation step of supplying the volatile organic impurity-removed hydrochloric acid obtained in the step 2) to a distillation column and performing distillation under conditions of a column bottom temperature of higher than 60° C. and 108° C. or lower and a column top temperature of 60° C. or lower to distill out a high-purity hydrogen chloride gas.

First claim

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The invention claimed is: 1. A method for producing a high-purity hydrogen chloride gas, comprising performing a purification process that includes the following 1) to 3) by using, as a raw material, a byproduct hydrogen chloride gas generated when producing vinyl chloride by thermally decomposing 1,2-dichloroethane: 1) generating a crude hydrochloric acid by allowing water to absorb the byproduct hydrogen chloride gas; 2) generating a volatile organic impurity-removed hydrochloric acid by bringing the crude hydrochloric acid obtained in 1) into contact with an inert gas supplied from a supply pipe, at a liquid temperature of 20 to 45° C. to dissipate volatile organic impurities; and 3) generating a high-purity hydrogen chloride gas by supplying the volatile organic impurity-removed hydrochloric acid obtained in 2) to a distillation column and performing distillation under conditions of a column bottom temperature of higher than 60° C. and 108° C. or lower and a column top temperature of 60° C. or lower to distill out a high-purity hydrogen chloride gas. 2. The method for producing a high-purity hydrogen chloride gas according to claim 1 , wherein a content of low molecular weight carboxylic acids consisting of formic acid and acetic acid in the crude hydrochloric acid obtained in 1) is 3 ppm or more. 3. The method for producing a high-purity hydrogen chloride gas according to claim 1 , wherein a content of bromine ion in the crude hydrochloric acid obtained in 1) is 5 ppm or more. 4. The method for producing a high-purity hydrogen chloride gas according to claim 1 , wherein 1,2-dichloroethane includes one obtained by an oxychlorination reaction using ethylene, hydrogen chloride, and oxygen as raw materials. 5. The method for producing a high-purity hydrogen chloride gas according to claim 1 , wherein, in 3), a column bottom liquid after distilling out the hydrogen chloride gas from the volatile organic impurity-removed hydrochloric acid is circulated to the crude hydrochloric acid of 1). 6. The method for producing a high-purity hydrogen chloride gas according to claim 1 , wherein the high-purity hydrogen chloride gas is for semiconductor manufacturing. 7. A method for producing a high-purity hydrochloric acid, comprising after performing the method for producing a high-purity hydrogen chloride gas according to claim 1 : 4) generating a high-purity hydrochloric acid by allowing water to absorb the obtained high-purity hydrogen chloride gas. 8. The method for producing a high-purity hydrochloric acid according to claim 7 , further comprising: 5) Removing a particle by treating the high-purity hydrochloric acid obtained in the step 4) with a particulate capturing filter. 9. The method for producing a high-purity hydrochloric acid according to claim 7 , wherein a content of low molecular weight carboxylic acids consisting of formic acid and acetic acid in the resulting high-purity hydrochloric acid is 1 ppm or less. 10. The method for producing a high-purity hydrochloric acid according to claim 7 , wherein a content of bromine ion in the resulting high-purity hydrochloric acid is 1 ppm or less. 11. The method for producing a high-purity hydrochloric acid according to claim 7 , wherein the high-purity hydrochloric acid is for semiconductor manufacturing. 12. The method for producing a high-purity hydrochloric acid according to claim 1 , wherein in 2), the volatile organic impurities are dissipated by counterflow contact in which the hydrochloric acid is distributed from an upper side to a lower side and the inert gas is distributed from a lower side to an upper side.

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What does patent US12312247B2 cover?
A method for producing a high-purity hydrogen chloride gas comprises performing a purification process that includes the steps 1) to 3) below on a byproduct hydrogen chloride gas: 1) a crude hydrochloric acid generation step of allowing water to absorb the byproduct hydrogen chloride gas; 2) a volatile organic impurity-removed hydrochloric acid generation step of bringing the crude h…
Who is the assignee on this patent?
Tokuyama Corp
What technology area does this patent fall under?
Primary CPC classification C01B7/07. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue May 27 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).