Thermal shield for processing chamber

Patent metadata

Field	Value
Publication number	US-12308218-B2
Application number	US-202217685046-A
Country	US
Kind code	B2
Filing date	Mar 2, 2022
Priority date	Mar 2, 2022
Publication date	May 20, 2025
Grant date	May 20, 2025

Abstract

Processing chambers, substrate supports and thermal shields are described. A thermal shield comprises a disc-shaped body having a thickness, an outer diameter with a first edge and a second edge at opposite ends of a diameter of the disc-shaped body, a front surface and a back surface defining the thickness. The front surface has a first longitudinal region comprising the first edge and a second longitudinal region comprising the second edge. Coating one or more of the first longitudinal region or the second longitudinal region with an emissivity material (i.e., emissivity) reduces side to side temperature variation. In some embodiments, processing chambers having the thermal shield described herein consume less power than comparative processing chambers that do not include a thermal shield.

First claim

What is claimed is:

1. A substrate processing chamber comprising:
a chamber body having a top wall, a bottom wall and a sidewall containing an interior volume and a process region;
a pump port positioned on a first side of the sidewall of the chamber body adjacent to the process region and configured to evacuate gases from the process region and a slit valve positioned on a second side of the sidewall of the chamber body and opposite the first side;
a substrate support within the interior volume, the substrate support comprising a support shaft with a support body on an end of the support shaft, the support body having a support surface and a back surface defining a thickness of the support body, a heater is within the thickness of the support body; and
a thermal shield comprising a disc-shaped body having a thickness, a central axis and a diameter with a first edge on a first side of the disc-shaped body positioned adjacent to the pump port and a second edge on a second side of the disc-shaped body positioned adjacent to the slit valve, the first edge and the second edge at opposite ends of a diameter of the disc-shaped body, a front surface and a back surface that define the thickness of the disc-shaped body, the thermal shield positioned along the support shaft at a distance from the support body so that there is a gap between the back surface of the support body and the front surface of the thermal shield, the front surface of the disc-shaped body comprising a first longitudinal region comprising the first edge and extending a distance from the first edge toward the central axis and a second longitudinal region comprising the second edge and extending a distance from the second edge toward the central axis along the diameter, the first longitudinal region having a first emissivity in a range of from 0 to 0.35 and the second longitudinal region having a second emissivity in a range of from 0.36 to 1 and the first longitudinal region and the second longitudinal region are configured to reduce side to side temperature variation of the support surface.

2. The substrate processing chamber of claim 1 , wherein the disc-shaped body comprises aluminum.

3. The substrate processing chamber of claim 2 , wherein the first emissivity comprises a clean aluminum surface and the second emissivity comprises a black coating.

4. The substrate processing chamber of claim 3 , wherein the first longitudinal region forms a boundary line extending perpendicular to the diameter.

5. The substrate processing chamber of claim 4 , wherein the boundary line passes through the central axis so that 50% of a surface area of the front surface comprises the first longitudinal region and 50% of the surface area of the front surface comprises the second longitudinal region.

6. The substrate processing chamber of claim 4 , wherein the boundary line crosses the diameter at a point within 30% to 70% of a distance from the first edge to the second edge.

7. The substrate processing chamber of claim 1 , wherein the second emissivity is in a range of from 0.66 to 1.

8. The substrate processing chamber of claim 7 , wherein the second emissivity comprises an anodized aluminum surface.

9. The substrate processing chamber of claim 8 , wherein the second emissivity is about 0.8.

10. The substrate processing chamber of claim 1 , wherein a size of each of the first longitudinal region and the second longitudinal region reduce side to side variation in temperature of the support surface positioned within 10 mm of the front surface.

11. The substrate processing chamber of claim 1 , wherein the first longitudinal region has an emissivity of 0.15 on the first edge and the second longitudinal region has an emissivity of 0.8 on the second edge.

12. The substrate processing chamber of claim 1 , wherein the first longitudinal region has an emissivity of 0.15 on the first edge and the second longitudinal region has an emissivity of 0.6 on the second edge.

13. The substrate processing chamber of claim 1 , wherein the first longitudinal region has an emissivity of 0.6 on the first edge and the second longitudinal region has an emissivity of 0.8 on the second edge.

14. The substrate processing chamber of claim 1 , wherein the gap is less than or equal to 10 mm.

15. The substrate processing chamber of claim 1 , wherein the gap is 6 mm.

Assignees

• Applied Materials Inc

Inventors

• Chang Youngki
• Mustafa Muhannad
• Shah Kartik
• Kashyap Dhritiman Subha
• Subramanian Dhivanraj

Classifications

• H01J37/32651 Primary

  Shields, e.g. dark space shields, Faraday shields · CPC title

• H01J37/32715

  Workpiece holder · CPC title

• H01J37/32522

  Temperature · CPC title

• H01J37/32724 Primary

  Temperature · CPC title