Treatment liquid and pattern forming method

Patent metadata

Field	Value
Publication number	US-12306538-B2
Application number	US-202117178218-A
Country	US
Kind code	B2
Filing date	Feb 17, 2021
Priority date	Sep 30, 2015
Publication date	May 20, 2025
Grant date	May 20, 2025

Abstract

An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can simultaneously suppress the occurrence of pattern collapse in a resist L/S pattern and the occurrence of omission failure in a resist C/H pattern.
The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and contains an organic solvent, in which the treatment liquid contains a first organic solvent having an SP value of 16.3 MPa 1/2 or less and a second organic solvent having an SP value of 17.1 MPa 1/2 or more.

First claim

What is claimed is:

1. A rinsing liquid for patterning a resist film,
used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to washing, and
containing an organic solvent,
wherein the rinsing liquid contains a first organic solvent having a solubility parameter value of 16.3 MPa 1/2 or less and a second organic solvent having a solubility parameter value of 17.1 MPa 1/2 or more,
the first organic solvent is undecane,
the second organic solvent contains at least one solvent selected from the group consisting of butyl acetate and 2-heptanone as a major component, and at least one solvent selected from the group consisting of propylene glycol monomethyl ether acetate and propylene glycol monomethyl ether as a minor component,
a content of the undecane is 40% by mass or less with respect to a total mass of the rinsing liquid, and
the rinsing liquid does not include a polymer.

2. A pattern forming method comprising:
a resist film forming step of forming a resist film using an actinic ray-sensitive or radiation-sensitive resin composition;
an exposing step of exposing the resist film; and
a treating step of treating the exposed resist film with a developer and a rinsing liquid,
wherein the treating step includes:
a developing step of carrying out development with the developer; and
a rinsing step of carrying out washing with the rinsing liquid according to claim 1 .

3. The pattern forming method according to claim 2 ,
wherein the developer includes an ester-based solvent.

4. The pattern forming method according to claim 3 ,
wherein the ester-based solvent is a solvent including at least one selected from the group consisting of butyl acetate, amyl acetate, isoamyl acetate, 2-methylbutyl acetate, 1-methylbutyl acetate, hexyl acetate, pentyl propionate, hexyl propionate, heptyl propionate, butyl butanoate, and butyl isobutanoate.

5. The rinsing liquid according to claim 1 ,
wherein the content of the undecane is 10% to 40% by mass with respect to the total mass of the rinsing liquid.

Assignees

• Fujifilm Corp

Inventors

• Tsubaki Hideaki
• Tsuchihashi Toru
• Nihashi Wataru
• Yamamoto Kei

Classifications

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• G03F7/40

  Treatment after imagewise removal, e.g. baking · CPC title

• G03F7/38

  Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)} · CPC title

• G03F7/2004

  characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light · CPC title

• G03F7/168

  Finishing the coated layer, e.g. drying, baking, soaking · CPC title