Organotin patterning materials with ligands having silicon/germanium; precursor compositions; and synthesis methods

Patent metadata

Field	Value
Publication number	US-12298666-B2
Application number	US-202418654160-A
Country	US
Kind code	B2
Filing date	May 3, 2024
Priority date	Jun 15, 2021
Publication date	May 13, 2025
Grant date	May 13, 2025

Abstract

As described herein, photosensitive composition comprises RSnL 3 , where R is a hydrocarbyl ligand with 1-20 carbon atoms and one or more silicon and/or germanium heteroatoms and L is an acetylide ligand (—C≡CA, where A is a silyl group with 0 to 6 carbon atoms or an organo group with 1 to 10 carbon atoms). Methods are described wherein photosensitive compositions are synthesized by reacting RX, where X is a halide, and MSnL 3 , where M is an alkali metal, alkali earth metal or a pseudo-alkali earth metal, L is an acetylide or a dialkylamide. The radiation sensitive compositions are effective for radiation based patterning, such as with EUV light.

First claim

What we claim is:

1. A method for patterning an organometallic compound comprising:
forming a coating on a substrate, wherein forming the coating comprises depositing RSnL 3 , wherein R is a hydrocarbyl group with 1-20 carbon atoms and one or more silicon or germanium heteroatoms, and L is a hydrolysable ligand;
irradiating the coating with radiation to form a latent image; and
developing the image to form a patterned coating with nanoscale features according to the latent image.

2. The method of claim 1 wherein the hydrolysable ligand comprises an alkoxide, a dialkylamide, or an alkyl/silyl acetylide.

3. The method of claim 1 wherein the substrate comprises silicon.

4. The method of claim 1 wherein the depositing comprises vapor deposition, spin coating, spray coating, or dip coating.

5. The method of claim 1 wherein the coating has an average thickness from 0.5 nm to 100 nm.

6. The method of claim 1 wherein the coating has a root-mean square surface roughness of less than 0.5 nm as measured by atomic force microscopy.

7. The method of claim 1 further comprising heating the coating to a temperature between about 30° C. and 300° C. for a period of time of about 10 seconds to about 10 minutes prior to irradiating the coating.

8. The method of claim 1 wherein the heating is performed under controlled partial pressures of gases, wherein the gases comprise H 2 O, CO 2 , CO, H 2 , N 2 , H 2 S, HCl, an inert gas, or a combination thereof.

9. The method of claim 1 wherein the irradiating comprises UV radiation or EUV radiation at a dose of about 1 mJ/cm 2 about 200 mJ/cm 2 or an electron beam at a dose equivalent to or not exceeding about 2 mC/cm 2 at 30 kV.

10. The method of claim 1 further comprising heating the coating to a temperature of 45° C. to about 300° C. for a period of time of at least about 0.1 minute to about 30 minutes after irradiating the coating the coating.

11. The method of claim 1 wherein the developing comprises an organic solvent or wherein the developing comprises a solvent-free process.

Assignees

• Inpria Corp

Inventors

• Jilek Robert E
• Jiang Kai
• Narasimhan Amrit K

Classifications

• G03F7/0042

  with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists (G03F7/075 takes precedence) · CPC title

• G03F7/11

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

• G03F7/168

  Finishing the coated layer, e.g. drying, baking, soaking · CPC title

• C07F7/2224

  Compounds having one or more tin-oxygen linkages · CPC title

• C07F7/2208

  Compounds having tin linked only to carbon, hydrogen and/or halogen · CPC title