Optoelectronic device

Patent metadata

Field	Value
Publication number	US-12298528-B2
Application number	US-202017615722-A
Country	US
Kind code	B2
Filing date	Oct 29, 2020
Priority date	Oct 29, 2019
Publication date	May 13, 2025
Grant date	May 13, 2025

Abstract

An optoelectronic device, in particular a display device, comprises: at least one optoelectronic light source, an at least partially transparent front layer, an at least partially transparent support layer, wherein the light source is arranged between the front layer and the support layer, wherein a front side of the light source faces the front layer and a rear side of the light source faces the support layer, and wherein a limiting device is provided in a circumferential direction around the light source, wherein the limiting device limits a spatial region, in which the light source emits light such that total internal reflection of the emitted light, in particular at an interface between the front layer and the outside, is avoided or at least reduced.

First claim

The invention claimed is:

1. An optoelectronic device, comprising:
at least one optoelectronic light source;
an at least partially transparent front layer;
an at least partially transparent support layer;
wherein the light source is arranged between the front layer and the support layer;
wherein a front side of the light source faces the front layer and a rear side of the light source faces the support layer;
wherein a limiting device is provided in a circumferential direction around the light source, wherein the limiting device limits a spatial region, in which the light source emits light such that total internal reflection of the emitted light is at least reduced; and
wherein the limiting device comprises a ring-shaped element inside of which the optoelectronic light source is located, wherein the ring-shaped element has an internal diameter and a height such that light emitted from the light source that would otherwise be totally reflected in the optoelectronic device is absorbed by the ring-shaped element.

2. The optoelectronic device according to claim 1 , wherein the limiting device is configured to absorb light.

3. The optoelectronic device according to claim 1 , wherein the optoelectronic light source is arranged on a backside of the support layer and the limiting device is arranged on the topside of the support layer.

4. The optoelectronic device according to claim 3 , wherein the limiting device is formed by at least an area of absorbing and/or partially or semi-transparent material which is arranged on the topside of the support layer.

5. The optoelectronic device according to claim 3 , wherein the limiting device is formed by a ring-shaped element made of an absorbing and/or partially or semi-transparent material on the topside of the support layer, wherein a central axis of the ring-shaped element coincides at least approximately with a central axis of the optoelectronic light source.

6. The optoelectronic device according to claim 1 , wherein a structured layer with light scattering elements is arranged on the front layer.

7. The optoelectronic device according to claim 1 , wherein an intermediate layer is arranged between the front layer and the support layer and a structured layer with light scattering elements is arranged between the front layer and the intermediate layer.

8. The optoelectronic device according to claim 1 , wherein a partially or semi-transparent rear layer, with a transmittance in the range between 10% to 90% percent or of around 20%, is arranged below the support layer.

9. The optoelectronic device according to claim 1 , wherein an intermediate layer is arranged between the front layer and the support layer and the optoelectronic light source is arranged on the support layer, wherein the intermediate layer comprises a cavity surrounding the light source or above the light source, wherein the cavity is filled with a material having a low index of refraction.

10. The optoelectronic device according to claim 1 , wherein an intermediate layer is arranged between the front layer and the support layer and the optoelectronic light source is arranged on the support layer, wherein the intermediate layer comprises a plurality of pillars arranged above the optoelectronic light source, wherein the pillars include a material having a low index of refraction.

11. An optoelectronic device, comprising:
at least one optoelectronic light source;
an at least partially transparent front layer;
an at least partially transparent support layer;
wherein the light source is arranged on or at least partially embedded in the support layer;
wherein a front side of the light source faces the front layer and a rear side of the light source faces the support layer; and
wherein a partially or semi-transparent intermediate layer, with a transmittance in the range between 15% to 25% percent, is arranged between the front layer and the support layer.

12. The optoelectronic device according to claim 11 , wherein a structured layer with light scattering elements is arranged on the front layer.

13. The optoelectronic device according to claim 11 , wherein an intermediate layer is arranged between the front layer and the support layer and a structured layer with light scattering elements is arranged between the front layer and the intermediate layer.

14. The optoelectronic device according to claim 11 , wherein a partially or semi-transparent rear layer, with a transmittance in the range between 10% to 90% percent or of around 20%, is arranged below the support layer.

15. The optoelectronic device according to claim 11 , wherein an intermediate layer is arranged between the front layer and the support layer and the optoelectronic light source is arranged on the support layer, wherein the intermediate layer comprises a cavity surrounding the light source or above the light source, wherein the cavity is filled with a material having a low index of refraction.

16. The optoelectronic device according to claim 11 , wherein an intermediate layer is arranged between the front layer and the support layer and the optoelectronic light source is arranged on the support layer, wherein the intermediate layer comprises a plurality of pillars arranged above the optoelectronic light source, wherein the pillars include a material having a low index of refraction.

17. An optoelectronic device, comprising:
at least one optoelectronic light source;
an at least partially transparent front layer;
an at least partially transparent support layer;
wherein the light source is arranged between the front layer and the support layer;
wherein a front side of the light source faces the front layer and a rear side of the light source faces the support layer;
wherein a limiting device is provided in a circumferential direction around the light source, wherein the limiting device limits a spatial region, in which the light source emits light such that total internal reflection of the emitted light is at least reduced;
wherein the optoelectronic light source is arranged on a backside of the support layer and the limiting device is arranged on the topside of the support layer.

18. The optoelectronic device according to claim 17 , wherein the limiting device comprises a ring-shaped element inside of which the optoelectronic light source is located, wherein the ring-shaped element has an internal diameter and a height such that light emitted from the light source that would otherwise be totally reflected in the optoelectronic device is absorbed by the ring-shaped element.

19. The optoelectronic device according to claim 18 ,
wherein the optoelectronic light source and the ring-shaped element is located in an intermediate layer including an EVA or PVB layer; and
wherein the ring-shaped element is formed by a ring-shaped form, which is made in the intermediate layer, by laser drilling and filled with absorbing material or lithography or printing process to apply the absorbing material directly.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Dobner Andreas
• Hiller Uli
• Brick Peter
• Halbritter Hubert
• Schwarz Thomas
• Wittmann Michael
• Groetsch Stefan
• Schwalenberg Simon
• Wittmann Sebastian

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• B60K35/00

  Instruments specially adapted for vehicles; Arrangement of instruments in or on vehicles · CPC title

• B60K35/20

  Output arrangements, i.e. from vehicle to user, associated with vehicle functions or specially adapted therefor · CPC title

• B60K35/50

  Instruments characterised by their means of attachment to or integration in the vehicle (B60K35/231 takes precedence) · CPC title

• B60K35/10

  Input arrangements, i.e. from user to vehicle, associated with vehicle functions or specially adapted therefor · CPC title