Laminated electronic or optoelectronic organic device

Patent metadata

Field	Value
Publication number	US-9806281-B2
Application number	US-201314648454-A
Country	US
Kind code	B2
Filing date	Nov 28, 2013
Priority date	Nov 29, 2012
Publication date	Oct 31, 2017
Grant date	Oct 31, 2017

Abstract

The invention relates to a structure comprising at least two impermeable substrates, at least one of these substrates being transparent, at least one intermediate adhesive film and at least one electronic or optoelectronic organic device between the two substrates, said device comprising a stack of organic layers comprising a photoelectroactive layer, with, on either side of the latter, additional organic layers that facilitate the transport of charge, among which layers mention may be made of a hole transport layer and an electron transport layer, said stack being inserted between two carriers, said stack of organic layers essentially containing materials the glass transition temperature (T gM ) of which is such that T gM −T gf ≧130° C., where T gf is the glass transition temperature of the material from which the intermediate adhesive film is made.

First claim

The invention claimed is:

1. A structure, comprising:
two impermeable substrates, at least one of the two impermeable substrates being transparent;
an interposed adhesive film; and
an organic electronic or optoelectronic device placed between the two impermeable substrates,
wherein said organic electronic or optoelectronic device comprises a stack of organic semiconducting layers comprising a photoelectroactive layer with, on either side of the photoelectroactive layer, additional semiconducting organic layers which facilitate transport of charges,
said stack of organic semiconducting layers emits light, generates electric charges, or transports electric charges,
said stack of organic semiconducting layers is inserted between said two impermeable substrates, at least one of the two impermeable substrates is a glass substrate covered with a conducting layer having a sheet resistance of less than or equal to 15Ω/□, and
said stack of organic semiconducting layers comprises exclusively materials for which a glass transition temperature (Tg M ) is such that:
Tg M −Tg f ≧150° C.

with a glass transition temperature (Tg f ) of a material constituting the interposed adhesive film.

2. The structure as claimed in claim 1 ,
wherein the interposed adhesive film comprises at least one layer of plastics selected from the group consisting of a polyvinyl butyral, a polyurethane, a polycarbonate, a poly(methyl methacrylate), a polypropylene, an ethylene/vinyl acetate copolymer, a cycloolefinic copolymer, a polyethylene, a thermoplastic polyester, an acrylic resin and a vinyl chloride/glycidyl methacrylate copolymer.

3. The structure as claimed in claim 1 ,
wherein the structure is a laminated structure, and
the glass transition temperature (Tg M ) is greater than or equal to a maximum temperature required during an assembling process (T a ).

4. The structure as claimed in claim 1 ,
wherein the glass substrate(s) is (are) flat or curved.

5. The structure as claimed in claim 1 ,
wherein the conducting layer is selected from the group consisting of
a silver low-e stack and
a conductive coating based on a doped oxide (TCO).

6. The structure as claimed in claim 5 ,
wherein the silver low-e stack is a single silver low-e stack or a double silver low-e stack.

7. The structure as claimed in claim 5 ,
wherein the doped oxide (TCO) is
tin-doped indium oxide (ITO),
zinc oxide doped with at least one doping element selected from the group consisting of aluminium and gallium, or
tin oxide doped with fluorine or with antimony.

8. The structure as claimed in claim 1 ,
wherein the structure satisfies a formula:
Y−X≧ 0.3 mm,

with X representing a sum of a thicknesses of the supports of the organic electronic or optoelectronic device, expressed in mm, and
Y representing a thickness of the interposed adhesive film, expressed in mm.

9. The structure as claimed in claim 1 ,
wherein a sum of the thicknesses of the supports of the organic electronic or optoelectronic device is less than or equal to 2.0 mm.

10. The structure as claimed in claim 9 ,
wherein the sum of the thickness of the supports of the organic electronic or optoelectronic device is less than or equal to 1.1 mm.

11. The structure as claimed in claim 1 ,
wherein a thickness of the interposed adhesive film is greater than or equal to 0.4 mm.

12. The structure as claimed in claim 11 ,
wherein the thickness of the interposed adhesive film is greater than or equal to 0.8 mm.

13. The structure as claimed in claim 1 ,
wherein the organic semiconducting layers comprises a hole transport layer and an electron transport layer.

14. A structure, comprising:
two impermeable substrates, at least one of the two impermeable substrates being transparent;
an interposed adhesive film; and
an organic electronic or optoelectronic device placed between the two impermeable substrates,
wherein said organic electronic or optoelectronic device comprises a stack of organic semiconducting layers comprising a photoelectroactive layer with, on either side of the photoelectroactive layer, additional semiconducting organic layers which facilitate transport of charges,
said stack of organic semiconducting layers emits light, generates electric charges, or transports electric charges,
said stack of organic semiconducting layers is inserted between two supports,
said stack of organic semiconducting layers comprises exclusively materials for which a glass transition temperature (Tg M ) is such that:
Tg M −Tg f ≧150° C.

with a glass transition temperature (Tg f ) of a material constituting the interposed adhesive film,
the structure is a laminated structure, and
the glass transition temperature (Tg M ) is greater than or equal to a maximum temperature required during an assembling process (T a ).

15. A structure, comprising:
two impermeable substrates, at least one of the two impermeable substrates being transparent;
an interposed adhesive film; and
an organic electronic or optoelectronic device placed between the two impermeable substrates,
wherein said organic electronic or optoelectronic device comprises a stack of organic semiconducting layers comprising a photoelectroactive layer with, on either side of the photoelectroactive layer, additional semiconducting organic layers which facilitate transport of charges,
said stack of organic semiconducting layers emits light, generates electric charges, or transports electric charges,
said stack of organic semiconducting layers is inserted between two supports,
said stack of organic semiconducting layers comprises exclusively materials for which a glass transition temperature (Tg M ) is such that:
Tg M −Tg f ≧150° C.

with a glass transition temperature (Tg f ) of a material constituting the interposed adhesive film, and
a thickness of the interposed adhesive film is greater than or equal to 0.4 mm.

Assignees

• Agc Glass Europe

Inventors

• Domercq Benoit
• Novotny Marek
• Linthout Sebastien
• Vivier Jonathan
• Vigneri Nunzio

Classifications

• B32B17/10834

  using a fluid · CPC title

• H01L51/5072

  Electricity · mapped topic

• H01L51/5056

  Electricity · mapped topic

• H01L2251/556

  Electricity · mapped topic

• H01L51/5246 Primary

  Electricity · mapped topic