Semiconductor die, semiconductor package and substrate dicing method
US-2024421000-A1 · Dec 19, 2024 · US
Light-emitting diode chip and method for manufacturing the same
US12294037B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12294037-B2 |
| Application number | US-202117450630-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 12, 2021 |
| Priority date | Apr 15, 2019 |
| Publication date | May 6, 2025 |
| Grant date | May 6, 2025 |
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- Title
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- Abstract
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- Assignees and inventors
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Abstract
Official abstract text for this publication.
A light-emitting diode chip includes a substrate. The substrate has a side surface configured as a serrated surface, which includes a plurality of laser inscribed features disposed along a thickness direction of the substrate and spaced apart from each other. A method for manufacturing the light-emitting diode chip is also disclosed herein.
First claim
Opening claim text (preview).
What is claimed is: 1. A light-emitting diode chip, comprising: a substrate which is made of sapphire, and which has a side surface configured as a serrated surface, said serrated surface comprising a plurality of laser inscribed features disposed along a thickness direction of said substrate and spaced apart from each other, wherein said laser inscribed features are formed on a r-plane of a unit cell of said substrate. 2. The light-emitting diode chip of claim 1 , wherein said substrate defines a reference plane in the thickness direction, and said laser inscribed features are located in the reference plane. 3. The light-emitting diode chip of claim 1 , wherein said substrate defines a plurality of reference planes in the thickness direction and parallel to each other, and said laser inscribed features are located in the reference planes. 4. The light-emitting diode chip of claim 1 , wherein said substrate defines two reference planes in the thickness direction and parallel to each other, said laser inscribed features are categorized into a first group of said laser inscribed features and a second group of said laser inscribed features, which are located in the two reference planes, respectively, said laser inscribed features in the first group being staggered with said laser inscribed features in the second group. 5. The light-emitting diode chip of claim 1 , further comprising a semiconductor light-emitting stack disposed on said substrate, a distance between one of said laser inscribed features and said semiconductor light-emitting stack ranging from two-third to one-fifth of a thickness of said light-emitting diode chip.
Assignees
Inventors
Classifications
- H10P54/00Primary
Cutting or separating of wafers, substrates or parts of devices · CPC title
of the light-emitting regions, e.g. non-planar junctions · CPC title
characterised by their shape, e.g. curved or truncated substrates · CPC title
Two-dimensional arrangements, e.g. asymmetric LED layout · CPC title
- H10H20/01Primary
Manufacture or treatment · CPC title
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Frequently asked questions
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- What does patent US12294037B2 cover?
- A light-emitting diode chip includes a substrate. The substrate has a side surface configured as a serrated surface, which includes a plurality of laser inscribed features disposed along a thickness direction of the substrate and spaced apart from each other. A method for manufacturing the light-emitting diode chip is also disclosed herein.
- Who is the assignee on this patent?
- Xiamen Sanan Optoelectronics Technology Co Ltd, Quanzhou Sanan Semiconductor Tech Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P54/00. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 06 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).