Magnetoresistance effect element, magnetic recording element, and high-frequency device

Patent metadata

Field	Value
Publication number	US-12288576-B2
Application number	US-202318373642-A
Country	US
Kind code	B2
Filing date	Sep 27, 2023
Priority date	Sep 29, 2022
Publication date	Apr 29, 2025
Grant date	Apr 29, 2025

Abstract

A magnetoresistance effect element having a large MR ratio is provided.
This magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a nonmagnetic layer. The first ferromagnetic layer includes a first layer and a second layer. The first layer is closer to the nonmagnetic layer than the second layer. The first layer has a Heusler alloy containing at least partially crystallized Co. The second layer contains a material different from the Heusler alloy and has at least a partially crystallized ferromagnetic material. The first layer and the second layer have added first atoms. The first atom is any one selected from the group consisting of Mg, Al, Cr, Mn, Ni, Cu, Zn, Pd, Cd, In, Sn, Sb, Pt, Au, and Bi.

First claim

What is claimed is:

1. A magnetoresistance effect element comprising:
a first ferromagnetic layer;
a second ferromagnetic layer; and
a nonmagnetic layer,
wherein the first ferromagnetic layer includes a first layer and a second layer,
wherein the first layer is closer to the nonmagnetic layer than the second layer,
wherein the first layer has a Heusler alloy containing at least partially crystallized Co,
wherein the second layer contains a material different from the Heusler alloy and has at least a partially crystallized ferromagnetic material,
wherein the first layer and the second layer have added first atoms, and
wherein the first atom is any one selected from the group consisting of Mg, Al, Cr, Mn, Ni, Cu, Zn, Pd, Cd, In, Sn, Sb, Pt, Au, and Bi.

2. The magnetoresistance effect element according to claim 1 ,
wherein the second ferromagnetic layer includes a third layer and a fourth layer,
wherein the third layer is closer to the nonmagnetic layer than the fourth layer,
wherein the third layer has a Heusler alloy containing at least partially crystallized Co,
wherein the fourth layer contains a material different from the Heusler alloy and has at least a partially crystallized ferromagnetic material, and
wherein the third layer and the fourth layer have the first atoms.

3. The magnetoresistance effect element according to claim 1 ,
wherein the first ferromagnetic layer further includes a fifth layer,
wherein the first layer and the fifth layer sandwich the second layer, and
wherein the fifth layer has the Heusler alloy.

4. The magnetoresistance effect element according to claim 1 ,
wherein the ferromagnetic material is represented by Co x Fe 1-x -A, and
wherein x is 0 or more and 1 or less and A is the first atom.

5. The magnetoresistance effect element according to claim 1 ,
wherein a crystal structure of the ferromagnetic material is a bcc structure or fcc structure.

6. The magnetoresistance effect element according to claim 1 ,
wherein the first layer and the second layer are close to each other,
wherein the first layer and the second layer are lattice-matched, and
wherein a lattice constant of the first layer is 95% or more and 105% or less of a lattice constant of the second layer when the lattice constant of the second layer is used as a reference.

7. The magnetoresistance effect element according to claim 1 ,
wherein a first surface of the first layer on the side of the nonmagnetic layer has a lower concentration of the first atoms than a second surface on the side opposite to the first surface.

8. The magnetoresistance effect element according to claim 1 ,
wherein a concentration of the first atoms in the first layer is lower than a concentration of the first atoms in the second layer.

9. The magnetoresistance effect element according to claim 1 ,
wherein a crystal structure of the Heusler alloy is an L2 1 structure or B2 structure.

10. The magnetoresistance effect element according to claim 1 ,
wherein a Co composition ratio of the Heusler alloy is less than a stoichiometric composition ratio,
wherein the Heusler alloy is represented by CoYZ or Co 2 YZ in stoichiometric composition,
wherein Y is a transition metal of a Mn, V, Cr, or Ti group, a transition metal element of a Co, Fe, Ni, or Cu group, or a noble metal element, and
wherein Z is a typical element of group III to group V.

11. The magnetoresistance effect element according to claim 10 ,
wherein the Heusler alloy is represented by Co 2 Y α Z β in composition formula,
wherein the Y is one or more elements selected from the group consisting of Fe, Mn, and Cr,
wherein the Z is one or more elements selected from the group consisting of Si, Al, Ga, and Ge, and
wherein α+β>2 is satisfied.

12. The magnetoresistance effect element according to claim 1 ,
wherein the first atom is substituted with a part of a crystal structure of the Heusler alloy.

13. The magnetoresistance effect element according to claim 1 , further comprising:
a NiAl alloy layer which is located in at least one of a position between the first ferromagnetic layer and the nonmagnetic layer and a position between the second ferromagnetic layer and the nonmagnetic layer.

14. The magnetoresistance effect element according to claim 13 ,
wherein the NiAl alloy layer has a thickness of 0.63 nm or less.

15. The magnetoresistance effect element according to claim 1 ,
wherein the nonmagnetic layer is a metal or alloy containing any element selected from the group consisting of Cu, Au, Ag, Al, and Cr.

16. The magnetoresistance effect element according to claim 1 , further comprising:
a substrate,
wherein the substrate is a base on which the first ferromagnetic layer, the second ferromagnetic layer, and the nonmagnetic layer are laminated, and
wherein the substrate is amorphous.

17. A magnetic recording element comprising:
a magnetic head which includes the magnetoresistance effect element according to claim 1 ; and
a magnetic recording medium.

18. A high-frequency device comprising:
the magnetoresistance effect element according to claim 1 .

Assignees

• Tdk Corp

Inventors

• Ichikawa Shinto
• INUBUSHI Kazuumi
• Nakada Katsuyuki

Classifications

• H01F10/26

  characterised by the substrate or intermediate layers {(H01F10/06 and H01F10/32 take precedence)} · CPC title

• G01R33/091

  Constructional adaptation of the sensor to specific applications · CPC title

• H01F10/1936

  Half-metallic, e.g. epitaxial CrO2 or NiMnSb films · CPC title

• G01R33/098

  comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title