Polishing head, polishing apparatus, and method of manufacturing semiconductor wafer

Patent metadata

Field	Value
Publication number	US-12285840-B2
Application number	US-201917600189-A
Country	US
Kind code	B2
Filing date	Dec 27, 2019
Priority date	Apr 5, 2019
Publication date	Apr 29, 2025
Grant date	Apr 29, 2025

Abstract

A polishing head includes a first ring-shaped member having an opening; a plate-shaped member that closes the opening on an upper side of the first ring-shaped member; a membrane that closes the opening on a lower side of the first ring-shaped member; a back pad adhered to a lower surface of the membrane; and a second ring-shaped member located below the back pad and having an opening that holds a polishing target workpiece. A space formed by closing the opening of the first ring-shaped member by the plate-shaped member and the membrane includes: a central region; and an outer peripheral region partitioned from the central region by a partition, and an inner peripheral edge region of the second ring-shaped member is located vertically below an outer peripheral edge of the outer peripheral region. A polishing apparatus includes the polishing head, and is used in a method of manufacturing a semiconductor wafer.

First claim

The invention claimed is:

1. A polishing head comprising:
a first ring-shaped member having an opening;
a plate-shaped member that closes the opening on an upper side of the first ring-shaped member;
a membrane that closes the opening on a lower side of the first ring-shaped member;
a back pad adhered to a lower surface of the membrane, such that no space is formed between the back pad and the membrane; and
a second ring-shaped member located below the back pad and having an opening that holds a polishing target workpiece, wherein
a space, formed by closing the opening of the first ring-shaped member by the plate-shaped member and the membrane, comprises:
a central region; and
an outer peripheral region partitioned from the central region by a partition,

an inner peripheral edge region of the second ring-shaped member is located vertically below an outer peripheral edge of the outer peripheral region, and
the partition is connected to the plate-shaped member.

2. The polishing head according to claim 1 ,
wherein the back pad is disposed between an outer peripheral portion on the lower surface of the membrane and an annular upper surface of the second ring-shaped member.

3. The polishing head according to claim 2 ,
which comprises:
an introducing path that introduces gas into the central region; and
an introducing path that introduces gas into the outer peripheral region.

4. The polishing head according to claim 1 ,
which comprises:
an introducing path that introduces gas into the central region; and
an introducing path that introduces gas into the outer peripheral region.

5. A polishing apparatus comprising:
the polishing head according to claim 1 ;
a polishing pad; and
a surface plate that supports the polishing pad.

6. A method of manufacturing a semiconductor wafer, the method comprising polishing a surface of a polishing target wafer with the polishing apparatus according to claim 5 to form a polished surface.

7. The method of manufacturing a semiconductor wafer according to claim 6 ,
wherein the polishing head comprises:
an introducing path that introduces gas into the central region; and
an introducing path that introduces gas into the outer peripheral region.

8. The method of manufacturing a semiconductor wafer according to claim 6 ,
wherein the back pad is disposed between an outer peripheral portion on the lower surface of the membrane and an annular upper surface of the second ring-shaped member.

9. The method of manufacturing a semiconductor wafer according to claim 8 ,
wherein the polishing head comprises:
an introducing path that introduces gas into the central region; and
an introducing path that introduces gas into the outer peripheral region.

10. The polishing apparatus according to claim 5 ,
wherein the back pad is disposed between an outer peripheral portion on the lower surface of the membrane and an annular upper surface of the second ring-shaped member.

11. The polishing apparatus according to claim 10 ,
wherein the polishing head comprises:
an introducing path that introduces gas into the central region; and
an introducing path that introduces gas into the outer peripheral region.

12. The polishing apparatus according to claim 5 ,
wherein the polishing head comprises:
an introducing path that introduces gas into the central region; and
an introducing path that introduces gas into the outer peripheral region.

13. The polishing head according to claim 1 ,
wherein a height of the space is 3.5 mm to 5.5 mm in a state in which gas is not introduced into the space.

Assignees

• Sumco Corp

Inventors

• Nakano Yuki
• Terakawa Ryoya
• Kihara Takayuki
• Ota Hiroki

Classifications

• H10P52/402

  of semiconductor materials · CPC title

• H10P90/129

  by polishing · CPC title

• B24B37/102 Primary

  the workpieces or work carriers being able to rotate freely due to a frictional contact with the lapping tool · CPC title

• B24B37/10

  for single side lapping · CPC title

• B24B37/32 Primary

  Retaining rings · CPC title