A process for electrochemical deposition of copper with different current densities
US-2024183052-A1 · Jun 6, 2024 · US
US12284766B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12284766-B2 |
| Application number | US-202118003866-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 28, 2021 |
| Priority date | Jun 29, 2020 |
| Publication date | Apr 22, 2025 |
| Grant date | Apr 22, 2025 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A method for preparing a ceramic copper clad laminate is provided, including following steps: providing a copper material; forming a copper oxide layer on a surface of the copper material; thermally treating the copper material on which the copper oxide layer is formed, to diffuse oxygen atoms in the copper material; removing the copper oxide layer on the thermally treated copper material; and soldering the copper-oxide-layer-removed copper material to a ceramic substrate to obtain a ceramic copper clad laminate.
Opening claim text (preview).
What is claimed is: 1. A method for preparing a ceramic copper clad laminate, comprising following steps: forming a copper oxide layer on a surface of a copper material; thermally treating the copper material on which the copper oxide layer is formed, to diffuse oxygen atoms into the copper material; removing the copper oxide layer on the thermally treated copper material by pickling or grinding, and soldering the copper-oxide-layer-removed copper material to a ceramic substrate to obtain the ceramic copper clad laminate. 2. The method according to claim 1 , wherein the forming the copper oxide layer comprises chemically oxidizing the copper material. 3. The method according to claim 2 , wherein the chemically oxidizing is carried out by at least one of following methods: (1) treating the copper material with a mixture solution of hypochlorite and a strong base; (2) treating the copper material with a mixture solution of a strong acid and hydrogen peroxide; or (3) treating the copper material with an acidic persulfate solution. 4. The method according to claim 3 , wherein the chemically oxidizing is carried out by at least one of following methods: (1) oxidizing with an oxidizing solution containing 10-200 g/L of hypochlorite and 10-100 g/L of a strong base at 30-100° C. for 5-100 min; (2) oxidizing with an oxidizing solution containing 10-200 g/L of a strong acid and 10-150 g/L of H 2 O 2 at 30-80° C. for 5-40 min; or (3) oxidizing with an oxidizing solution containing 30-150 g/L of persulfate at 30-80° C. and PH<4 for 5-40 min. 5. The method according to claim 1 , wherein the copper oxide layer has a thickness of 0.5-3 μm. 6. The method according to claim 1 , wherein a temperature of the thermally treating is 400-900° C., and a time of the thermally treating is 5-100 min. 7. The method according to claim 1 , wherein the thermally treating is carried out under a vacuum or inert gas condition. 8. The method according to claim 1 , wherein in the copper-oxide-layer-removed copper material, a mass of oxygen element is 0.001-0.01% of a mass of the copper material. 9. The method according to claim 1 , wherein the soldering is active metal soldering, and the active metal soldering comprises steps of: arranging an active metal solder on a surface of the ceramic substrate; covering the active metal solder with the copper-oxide-layer-removed copper material; and soldering in a vacuum environment to form a copper layer on the ceramic substrate to obtain the ceramic copper clad laminate. 10. The method according to claim 1 , wherein after the soldering, a grain size of copper on a side of the copper material away from the ceramic substrate is 10-200 μm. 11. The method according to claim 1 , wherein the ceramic substrate comprises nitride ceramic. 12. The method according to claim 1 , further comprising: cleaning the copper material before forming the copper oxide layer on the surface of the copper material. 13. The method according to claim 12 , a reagent used in the cleaning comprises at least one of sodium hydroxide, sulfuric acid, sodium citrate, acetone, or ethanol. 14. A ceramic copper clad laminate, prepared by the method according to claim 1 . 15. A ceramic copper clad laminate of claim 1 , comprising a ceramic substrate, an active metal soldering layer, and a copper layer laminated in sequence, wherein, the copper layer contains oxygen element. 16. The ceramic copper clad laminate according to claim 15 , wherein in the copper layer, a mass of the oxygen element is 0.002-0.005% of a mass of the copper layer. 17. The ceramic copper clad laminate according to claim 15 , wherein a grain size of copper on a side of the copper layer away from the active metal soldering layer is 10-200 μm. 18. The ceramic copper clad laminate according to claim 15 , wherein the ceramic substrate is nitride ceramic.
Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating · CPC title
Using an aqueous solution, e.g. for cleaning or during drilling of holes · CPC title
by conversion of the surface of the metal, e.g. by oxidation, whether or not followed by reaction or removal of the converted layer · CPC title
Inorganic insulating substrates, e.g. ceramic, glass · CPC title
Treatment of copper or alloys based thereon · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.