Method for cleaning substrate, method for manufacturing photomask and method for cleaning photomask

Patent metadata

Field	Value
Publication number	US-12282260-B2
Application number	US-202117560974-A
Country	US
Kind code	B2
Filing date	Dec 23, 2021
Priority date	Oct 25, 2018
Publication date	Apr 22, 2025
Grant date	Apr 22, 2025

Abstract

A method for cleaning is provided. The method includes: removing a pellicle frame from a top surface of a photomask by debonding an adhesive between the photomask and the pellicle frame, wherein a first portion of the adhesive is remained on the top surface of the photomask, and removing the first portion of the adhesive on the top surface of the photomask, including applying an alkaline solution to the top surface of the photomask, and performing a mechanical impact to the photomask.

First claim

What is claimed is:

1. A method for cleaning, comprising:
removing a pellicle frame from a top surface of a photomask by debonding an adhesive between the photomask and the pellicle frame, wherein a first portion of the adhesive is remained on the top surface of the photomask; and
removing the first portion of the adhesive on the top surface of the photomask, comprising:
applying ozonated deionized water over the top surface of the photomask to oxidize the first portion of the adhesive;
applying an alkaline solution to the top surface of the photomask after applying the ozonated deionized water; and
performing a mechanical impact to the photomask.

2. The method of claim 1 , wherein a first portion of the top surface of the photomask is covered by the first portion of the adhesive prior to removing the first portion of the adhesive.

3. The method of claim 2 , wherein the first portion of the top surface of the photomask is exposed from the adhesive after performing the mechanical impact.

4. The method of claim 1 , wherein the mechanical impact comprises megasonic cleaning.

5. The method of claim 1 , wherein the adhesive is made of acrylic-based compound, rubber-based compound, polybutene-based compound, polyurethane-based compound, or silicon-based compound.

6. The method of claim 1 , wherein the alkaline solution comprises tetramethylammonium hydroxide (TMAH).

7. The method of claim 1 , wherein a second portion of the adhesive is remained on the pellicle frame.

8. The method of claim 1 , wherein applying the ozonated deionized water over the top surface of the photomask further comprises: sequentially applying the ozonated deionized water and radiated ozonated deionized water over the top surface of the photomask.

9. The method of claim 1 , wherein the mechanical impact is performed after applying the alkaline solution.

10. A method for cleaning a substrate, comprising:
removing adhesive on a top surface of a photomask, comprising:
sequentially applying ozonated deionized water and radiated ozonated deionized water over the top surface of the photomask;
applying TMAH solution over the top surface of the photomask after applying the ozonated deionized water and the radiated ozonated deionized water over the top surface of the photomask for altering molecular bonding of the adhesive thereon; and
performing a megasonic cleaning on the remaining adhesive, wherein a portion of the top surface of the photomask is exposed from the adhesive subsequent to the megasonic cleaning.

11. The method of claim 10 , wherein the megasonic cleaning is performed subsequent to the application of TMAH solution.

12. The method of claim 10 , wherein the adhesive is made of acrylic-based compound, rubber-based compound, polybutene-based compound, polyurethane-based compound, or silicon-based compound.

13. The method of claim 10 , further comprising removing a pellicle from the photomask prior to applying ozonated deionized water to the top surface of the photomask.

14. A method for cleaning, comprising:
receiving a photomask, wherein a first portion of a surface of the photomask is covered by an adhesive material;
applying ozonated deionized water over the top surface of the photomask to oxidize the adhesive material;
applying an alkaline solution to the oxidized adhesive material on the surface of the photomask; and
performing a mechanical impact to the photomask to remove at least a portion of the adhesive material.

15. The method of claim 14 , wherein the mechanical impact is performed after applying the alkaline solution.

16. The method of claim 14 , further comprising applying radiated ozonated deionized water over the surface of the photomask.

17. The method of claim 16 , wherein the application of the radiated ozonated deionized water is prior to the application of the alkaline solution.

18. The method of claim 14 , wherein the alkaline solution comprises tetramethylammonium hydroxide (TMAH).

19. The method of claim 14 , wherein the adhesive material comprises acrylic-based compound, rubber-based compound, polybutene-based compound, polyurethane-based compound, or silicon-based compound.

20. The method of claim 14 , wherein the mechanical impact comprises megasonic cleaning.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Hsu Yu-Hsin
• Chang Hao-Ming
• Wei Shao-Chi
• Hsu Sheng-Chang
• Lin Cheng-Ming

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• H10P76/40

  of masks comprising inorganic materials · CPC title

• H10P70/60

  Cleaning only by mechanical processes · CPC title

• H10P70/23 Primary

  during, before or after processing of insulating materials · CPC title

• G03F1/82

  Auxiliary processes, e.g. cleaning or inspecting · CPC title