Bias voltage modulation approach for SiO/SiN layer alternating etch process

Patent metadata

Field	Value
Publication number	US-12278110-B2
Application number	US-202217572397-A
Country	US
Kind code	B2
Filing date	Jan 10, 2022
Priority date	Jan 10, 2022
Publication date	Apr 15, 2025
Grant date	Apr 15, 2025

Abstract

Embodiments of the present disclosure generally relate to a method for etching a film stack with high selectivity and low etch recipe transition periods. In one embodiment, a method for etching a film stack having stacked pairs of oxide and nitride layers is described. The method includes transferring a substrate having a film stack formed thereon into a processing chamber, providing a first bias voltage to the substrate, etching an oxide layer of the film stack while providing the first bias voltage to the substrate, providing a second bias voltage to the substrate, the second bias voltage greater than the first bias voltage, and etching a nitride layer of the film stack while providing the second bias voltage to the substrate.

First claim

What is claimed is:

1. A method for etching a film stack having stacked pairs of oxide and nitride layers, the method comprising:
transferring a substrate having a film stack formed thereon into a processing chamber;
providing a first bias voltage to the substrate;
etching an oxide layer of the film stack with a first process gas recipe while providing the first bias voltage to the substrate;
providing a second bias voltage to the substrate, the second bias voltage greater than the first bias voltage; and
etching a nitride layer of the film stack with the first process gas recipe while providing the second bias voltage to the substrate.

2. The method of claim 1 , wherein the providing the second bias voltage occurs after etching the oxide layer of the film stack.

3. The method of claim 1 , wherein the oxide layer of the film stack is silicon oxide (SiO) and wherein the nitride layer of the film stack is silicon nitride (SiN).

4. The method of claim 3 , wherein the first bias voltage is from about 0 kV to about 3 kV, the second bias voltage is from about 2 kV to about 8 kV.

5. The method of claim 1 , further comprising:
providing a process gas mixture to the substrate, the process gas mixture including C N F M , C X H Y F Z , and oxygen, wherein the subscripts n, m, x, y and z are positive integers.

6. The method of claim 5 , wherein the oxygen comprises from about 25% to about 50% of the process gas mixture by volume.

7. The method of claim 5 , wherein a composition of the process gas mixture remains substantially the same during the etching the oxide layer and the etching the nitride layer.

8. The method of claim 5 , wherein the C N F M gas is selected from the group consisting of C 2 F 4 , C 4 F 8 , C 3 F 6 , and C 4 F 6 , and wherein the CxHYFz gas is selected from the group consisting of CHF 3 , CH 2 F 2 , and CH 3 F.

9. The method of claim 1 , wherein the oxide layer and the nitride layer are each from about 20 nm to about 30 nm thick.

10. The method of claim 1 , wherein the first process gas recipe comprises:
an etch gas type;
an etch gas flow rate, and
an etch gas pressure.

11. A method for etching a film stack having stacked pairs of oxide and nitride layers, the method comprising:
transferring a substrate having a film stack formed thereon into a process chamber;
providing a process gas mixture to the substrate, the process gas mixture including C N F M , C X H Y F Z , and oxygen, wherein the subscripts n, m, x, y and z are positive integers;
providing a first bias voltage to the substrate;
etching a first oxide layer of the film stack while providing the first bias voltage to the substrate and while providing the process gas mixture to the substrate;
providing a second bias voltage to the substrate, the second bias voltage greater than the first bias voltage;
etching a nitride layer of the film stack while providing the second bias voltage to the substrate and while providing the process gas mixture to the substrate;
providing a third bias voltage to the substrate, the third bias voltage less than the second bias voltage; and
etching a second oxide layer of the film stack while providing the third bias voltage to the substrate and while providing the process gas mixture to the substrate.

12. The method of claim 11 , wherein the oxide layer of the film stack is silicon oxide (SiO) and wherein the nitride layer of the film stack is silicon nitride (SiN).

13. The method of claim 12 , wherein the first bias voltage is from about 0 kV to about 3 kV, the second bias voltage is from about 2 kV to about 8 kV.

14. The method of claim 13 , wherein the first bias voltage is about 0 kV and the second bias voltage is about 2 kV.

15. The method of claim 14 , wherein the etching the oxide layer achieves an oxide-to-silicon nitride etch selectivity of about 3.2 or greater.

16. The method of claim 14 , wherein the etching the nitride layer achieves a silicon nitride-to-oxide etch selectivity of about 1.4 or greater.

17. The method of claim 11 , wherein the C N F M gas is selected from the group consisting of C 2 F 4 , C 4 F 8 , C 3 F 6 , and C 4 F 6 , and wherein the C X H Y F Z gas is selected from the group consisting of CHF 3 , CH 2 F 2 , and CH 3 F.

18. The method of claim 11 , wherein the first bias voltage and the second bias voltage are increased as an aspect ratio is increased.

19. A method for etching a film stack having stacked pairs of silicon oxide and silicon nitride layers, the method comprising:
transferring a substrate having a film stack formed thereon into a process chamber;
providing a process gas mixture to the substrate, the process gas mixture including C N F M , C X H Y F Z , and oxygen, wherein the subscripts n, m, x, y or z are positive integers, and wherein the oxygen comprises from about 25% to about 50% of the process gas mixture by volume;
providing a first bias voltage to the substrate;
etching a first silicon oxide layer of the film stack while providing the first bias voltage to the substrate and while providing the process gas mixture to the substrate;
providing a second bias voltage to the substrate, the second bias voltage greater than the first bias voltage;
etching a silicon nitride layer of the film stack while providing the second bias voltage to the substrate and while providing the process gas mixture to the substrate;
providing the first bias voltage to the substrate; and
etching a second silicon oxide layer of the film stack while providing the first bias voltage to the substrate and while providing the process gas mixture to the substrate.

20. The method of claim 19 , wherein the providing the second bias voltage occurs after etching the first layer of the film stack.

21. The method of claim 19 , wherein the first bias voltage and the second bias voltage are increased as an aspect ratio is increased.

Assignees

• Applied Materials Inc

Inventors

• Kang Sean
• Luere Olivier
• Takeshita Kenji
• CHOI Sanghyuk
• Zou Mengnan
• Ding Zihao

Classifications

• H10P50/283 Primary

  by chemical means · CPC title

• H10P14/6922 Primary

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P50/242 Primary

  of Group IV materials · CPC title

• H10P50/285

  of materials not containing Si, e.g. PZT or Al2O3 · CPC title

• H01L21/31116

  Electricity · mapped topic