Vertical microstrip-to-waveguide transition

Patent metadata

Field	Value
Publication number	US-12265172-B2
Application number	US-202217804061-A
Country	US
Kind code	B2
Filing date	May 25, 2022
Priority date	May 25, 2022
Publication date	Apr 1, 2025
Grant date	Apr 1, 2025

Abstract

This document describes techniques and systems for a vertical microstrip-to-waveguide transition. A radar system may include a monolithic microwave integrated circuit (MIMIC) to generate electromagnetic signals and a printed circuit board (PCB) that includes a first surface, a microstrip, and a grounding pattern. The microstrip can be located on the first surface and operatively connect to the MIMIC. The grounding pattern is located on the first surface and made of conductive material. The radar system also includes a transition channel positioned over the grounding pattern, which includes a vertical taper between a bottom surface and a top surface. The transition channel defines a dielectric-filled portion formed by the grounding pattern and its interior surface. The described vertical transition can reduce manufacturing costs and support a wide bandwidth by tolerating an air gap at the transition-to-waveguide interface.

First claim

What is claimed is:

1. An apparatus comprising:
a printed circuit board (PCB) comprising:
a first surface;
a processor mounted on the first surface;
a microstrip located on the first surface and operatively connectable the processor located on the first surface;
a grounding pattern located on the first surface, the grounding pattern being made of a conductive material; and
a transition channel mounted on, positioned over, and substantially covering the grounding pattern, the transition channel comprising a bottom surface, a top surface, and an aperture in the top surface, the bottom surface opposite the grounding pattern, the transition channel including a vertical taper having a continuous slope extending between the bottom surface and the top surface, the transition channel defining a dielectric-filled portion formed by the grounding pattern and an interior surface of the transition channel.

2. The apparatus of claim 1 , wherein the transition channel is mounted to the PCB using a surface-mount technology process.

3. The apparatus of claim 2 , wherein the surface-mount technology process uses a reflow process or a conductive epoxy.

4. The apparatus of claim 1 , wherein the aperture has an approximately rectangular shape.

5. The apparatus of claim 1 , wherein a waveguide is mounted on the transition channel, an inlet aperture of the waveguide being positioned over the aperture in the top surface of the transition channel.

6. The apparatus of claim 5 , wherein the vertical taper is configured to match an impedance of the transition channel at the aperture with an impedance of the waveguide.

7. The apparatus of claim 6 , wherein the vertical taper of the wave guide transition channel is configured to match an impedance of the waveguide transition channel at the output aperture with an impedance of the waveguide.

8. The apparatus of claim 5 , wherein an output aperture of the waveguide is in line with a longitudinal direction of the transition channel.

9. The apparatus of claim 5 , wherein an output aperture of the waveguide is in line with a lateral direction of the transition channel.

10. The apparatus of claim 5 , wherein the waveguide is operatively connectable to an antenna input on another PCB.

11. The apparatus of claim 1 , wherein the grounding pattern has an approximately rectangular shape and includes via holes to a second surface of the PCB, the second surface being opposite the first surface of the PCB.

12. The apparatus of claim 1 , wherein the microstrip is configured to provide impedance matching to feed lines from the processor.

13. The apparatus of claim 1 , wherein the conductive material comprises a copper alloy.

14. The apparatus of claim 1 , wherein the dielectric-filled portion is filled with air.

15. The apparatus of claim 1 , wherein the transition channel comprises metal or plastic.

16. The apparatus of claim 15 , wherein a thickness of the metal or plastic of the transition channel is approximately 0.3 millimeters.

17. The apparatus of claim 16 , wherein:
a length of the transition channel in a longitudinal direction is approximately 6.3 millimeters,
a height of the transition channel in a vertical direction perpendicular to the PCB is approximately one millimeter; and
a width of the transition channel in a lateral direction is approximately 3.7 millimeters, the lateral direction being perpendicular to the longitudinal direction.

18. The apparatus of claim 17 , wherein:
a width of the aperture in the top surface of the transition channel in the lateral direction is approximately 2.13 millimeters; and
a length of the aperture in the longitudinal direction is approximately 0.74 millimeters.

19. The apparatus of claim 1 , wherein the apparatus comprises a radar system.

20. The apparatus of claim 19 , wherein the radar system is configured to be part of a vehicle.

Assignees

• Aptiv Technologies AG

Inventors

• Saqueb Syed An Nazmus
• Gupta Biswadeep Das
• Harnist Kevin

Classifications

• H01P5/087

  Transitions to a dielectric waveguide · CPC title

• H01P3/081

  Microstriplines · CPC title

• H01P1/11

  by ferromagnetic devices · CPC title

• G01S13/931

  of land vehicles · CPC title

• G01S7/032 Primary

  Constructional details for solid-state radar subsystems · CPC title