Concentrated liquid of polishing composition and polishing method using same

Patent metadata

Field	Value
Publication number	US-12264265-B2
Application number	US-202117343944-A
Country	US
Kind code	B2
Filing date	Jun 10, 2021
Priority date	Jun 18, 2020
Publication date	Apr 1, 2025
Grant date	Apr 1, 2025

Abstract

An object of the present invention is to provide a unit capable of improving redispersibility in a concentrated liquid of a polishing composition containing alumina as abrasive grains. There is provided a concentrated liquid of a polishing composition which includes: particulate alumina; colloidal alumina having an aspect ratio of more than 5 and 800 or less; at least one phosphorus-containing acid selected from the group consisting of phosphoric acid, phosphoric acid condensates, organic phosphoric acids, phosphonic acids, and organic phosphonic acids; and water, where a pH of the concentrated liquid of the polishing composition is 2 or more and 4.5 or less.

First claim

What is claimed is:

1. A concentrated liquid of a polishing composition comprising:
particulate alumina;
colloidal alumina having an aspect ratio of more than 5 and 800 or less;
at least one phosphorus-containing acid selected from the group consisting of phosphoric acid, phosphoric acid condensates, organic phosphoric acids, phosphonic acids, and organic phosphonic acids; and
water
wherein a pH of the concentrated liquid of the polishing composition is 2 or more and 4.5 or less, and
wherein a shape of the colloidal alumina is feathery.

2. The concentrated liquid according to claim 1 , wherein an electrical conductivity is 1.5 mS/cm or more and 3.0 mS/cm or less.

3. The concentrated liquid according to claim 1 , wherein an average major axis of the colloidal alumina is 50 nm or more and 5000 nm or less.

4. The concentrated liquid according to claim 1 , wherein a ratio of the average particle size of the particulate alumina to the average major axis of the colloidal alumina is 0.5 or more and 50 or less.

5. The concentrated liquid according to claim 1 , wherein a concentration of the particulate alumina is 2% by mass or more and 40% by mass or less.

6. The concentrated liquid according to claim 1 , wherein a concentration of the colloidal alumina is 0.01% by mass or more and 20% by mass or less.

7. The concentrated liquid according to claim 1 , wherein a content of the colloidal alumina is 0.1 parts by mass or more and 70 parts by mass or less relative to 100 parts by mass of a content of the particulate alumina.

8. The concentrated liquid according to claim 1 , wherein the phosphorus-containing acid is at least one selected from the group consisting of organic phosphonic acids.

9. A polishing composition obtained by 2 to 20-fold dilution of the concentrated liquid according to claim 1 on a mass basis using a dispersing medium.

10. A polishing method comprising polishing an object to be polished containing a resin and a metal by using the concentrated liquid according to claim 9 .

11. A method of manufacturing an electronic circuit board, comprising the polishing method according to claim 10 .

12. The concentrated liquid according to claim 1 , wherein the phosphorus-containing acid is at least one selected from the group consisting of organic phosphoric acids, phosphonic acids, and organic phosphonic acids.

13. The concentrated liquid according to claim 1 , wherein the phosphorus-containing acid is at least one selected from the group consisting of phosphonic acids, and organic phosphonic acids.

14. The concentrated liquid according to claim 1 , wherein the phosphorus-containing acid is at least one selected from the group consisting of pyrophosphoric acid, tripolyphosphoric acid, tetrapolyphosphoric acid, hexametaphosphoric acid, methyl acid phosphate, ethyl acid phosphate, ethylene glycol acid phosphate, isopropyl acid phosphate, phytic acid (myo-inositol-1,2,3,4,5,6-hexaphosphate), 1-hydroxyethylidene-1,1-diphosphonic acid (HEDP), nitrilotris (methylenephosphonic acid) (NTMP), ethylenediaminetetra (methylenephosophonic acid) (EDTMP), diethylenetriamine penta (methylenephosphonic acid), ethane-1,1-diphosphonic acid, ethane-1,1,2-triphosphonic acid, ethane-1-hydroxy-1,1-diphosphonic acid, ethane hydroxy-1,1,2-triphosphonic acid, ethane-1,2-dicarboxy-1,2-diphosphonic acid, and methanehydroxyphosphonic acid.

15. The concentrated liquid according to claim 1 , wherein the phosphorus-containing acid is at least one selected from the group consisting of 1-hydroxyethylidene-1, 1-diphosphonic acid (HEDP), nitrilotris (methylenephosphonic acid) (NTMP), and ethylenediaminetetra (methylenephosophonic acid) (EDTMP).

16. The concentrated liquid according to claim 1 , wherein an average particle size of the particulate alumina is 0.5 μm or more and 5 μm or less.

Assignees

• Fujimi Inc

Inventors

• Izawa Yoshihiro

Classifications

• H10P52/402

  of semiconductor materials · CPC title

• H05K3/26

  Cleaning or polishing of the conductive pattern · CPC title

• B24B19/22 Primary

  characterised by a special design with respect to properties of the material of non-metallic articles to be ground · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• H05K2203/0789

  Aqueous acid solution, e.g. for cleaning or etching · CPC title