Group VI precursor compounds

Patent metadata

Field	Value
Publication number	US-12258356-B2
Application number	US-202318373868-A
Country	US
Kind code	B2
Filing date	Sep 27, 2023
Priority date	Feb 27, 2019
Publication date	Mar 25, 2025
Grant date	Mar 25, 2025

Abstract

The invention provides a facile process for preparing various Group VI precursor compounds useful in the vapor deposition of such Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. The process provides an effective means to obtain such volatile materials, which can then be sources of molybdenum, chromium, or tungsten-containing materials to be deposited on such substrates. Additionally, the invention provides a method for vapor deposition of such compounds onto microelectronic device substrates.

First claim

We claim:

1. A compound of the Formula (I)

wherein M is chosen from molybdenum, tungsten, and chromium,
X is chosen from bromo and iodo, and
each L 1 and L 2 are the same or different and constitute:
(i) a monodentate hydrocarbyl ligand coordinated with M, or
(ii) are taken together to form a bidentate hydrocarbyl ligand coordinated with M,

or wherein, when X is chloro, M is molybdenum or tungsten, and each of L 1 and L 2 is CH 3 CN,
wherein the compound is crystalline and sufficiently pure to allow for determination of the unit cell.

2. The compound of claim 1 , wherein X is bromo.

3. The compound of claim 1 , wherein X is iodo.

4. The compound of claim 1 , wherein the compound is MoO 2 Cl 2 (CH 3 CN) 2 .

5. The compound of claim 4 , wherein the compound has a unit cell of about:

a = 12.0350(8) Å
α = 90°

b = 11.5956(9) Å
β = 90°

c = 26.5807(15) Å
γ = 90°.

6. The compound of claim 1 , wherein the compound is WO 2 Cl 2 (CH 3 CN) 2 .

7. The compound of claim 6 , wherein the compound has a unit cell of about:

a = 8.7091(6) Å
α = 90°

b = 8.2536(7) Å
β = 90°

c = 12.8021(8) Å
γ = 90°.

Assignees

• Entegris Inc

Inventors

• Ermert David M
• Baum Thomas H
• Wright Jr Robert

Classifications

• H10P14/69396

  the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium · CPC title

• H10P14/412

  Deposition of metallic or metal-silicide materials · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/668

  the materials being characterised by the deposition precursor materials · CPC title

• H10P14/6939

  characterised by the metal · CPC title