Transversely-excited film bulk acoustic resonators with electrodes having a second layer of variable width

Patent metadata

Field	Value
Publication number	US-12255605-B2
Application number	US-202318498887-A
Country	US
Kind code	B2
Filing date	Oct 31, 2023
Priority date	Jun 18, 2020
Publication date	Mar 18, 2025
Grant date	Mar 18, 2025

Abstract

There is disclosed acoustic resonators and filter devices. An acoustic resonator device includes a piezoelectric plate, and an interdigital transducer (IDT) formed on a front surface of the piezoelectric plate. The IDT includes interleaved fingers. At least one of the interleaved fingers includes a first layer adjacent the piezoelectric plate and a second layer over the first layer, wherein a width of the first layer is constant, and wherein a width of the second layer varies along a length of the at least one interleaved finger.

First claim

It is claimed:

1. An acoustic resonator device comprising:
a piezoelectric layer; and
an interdigital transducer (IDT) at a surface of the piezoelectric layer, the IDT comprising interleaved fingers,
wherein at least one interleaved finger of the interleaved fingers comprises a first layer adjacent the piezoelectric layer and a second layer over the first layer,
wherein a width of the second layer varies along a length of the at least one interleaved finger, and
wherein a thickness of the first layer is less than a thickness of the second layer.

2. The acoustic resonator device of claim 1 , wherein the piezoelectric layer and IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the piezoelectric layer.

3. The acoustic resonator device of claim 1 , wherein a shape of the second layer of a first interleaved finger of the at least one interleaved finger is different from a shape of the second layer of a second interleaved finger of the at least one interleaved finger.

4. The acoustic resonator device of claim 1 , wherein the width of the second layer decreases linearly along at least a portion of a length of the second layer.

5. The acoustic resonator device of claim 1 , wherein a portion of the second layer is curved.

6. The acoustic resonator device of claim 1 , wherein the width of the second layer increases along a first portion of the second layer and decreases along a second portion of the second layer.

7. The acoustic resonator device of claim 1 , wherein the width of the second layer along a length of the at least one interleaved finger is less than or equal to the width of the first layer.

8. The acoustic resonator device of claim 1 , further comprising an adhesion layer between the first layer and the piezoelectric layer.

9. An acoustic resonator device comprising:
a piezoelectric layer; and
an interdigital transducer (IDT) at a surface of the piezoelectric layer, the IDT comprising a pair of busbars with interleaved fingers extending therefrom, respectively,
wherein at least one interleaved finger of the interleaved fingers comprises a first layer at the piezoelectric layer and a second layer over the first layer and opposite the piezoelectric layer,
wherein a width of the second layer of the at least one interleaved finger varies as the at least one interleaved finger extends away from the respective busbar of the pair of busbars, and
wherein a thickness of the first layer is less than a thickness of the second layer.

10. A filter device comprising:
a plurality of acoustic resonators, each comprising:
a piezoelectric layer; and
a conductor pattern at a surface of the piezoelectric layer, the conductor pattern including an interdigital transducer (IDT) having interleaved fingers,
wherein at least one interleaved finger of the interleaved fingers comprises a first layer adjacent the piezoelectric layer and a second layer over the first layer,
wherein a width of the second layer varies along a length of the at least one interleaved finger, and

wherein, for at least one of the plurality of acoustic resonators, a thickness of the first layer of the at least one of the interleaved fingers is less than a thickness of the second layer.

11. The filter device of claim 10 , wherein the piezoelectric layer and IDT of at least one of the plurality of acoustic resonators are configured such that respective radio frequency signals applied to the IDT excites respective shear primary acoustic modes in the piezoelectric layer.

12. The filter device of claim 10 , wherein, for at least one of the plurality of acoustic resonators, a shape of the second layer of a first interleaved finger of the interleaved fingers is different from a shape of the second layer of a second interleaved finger of the interleaved fingers.

13. The filter device of claim 10 , wherein, for at least one of the plurality of acoustic resonators, the width of the second layer of the at least one interleaved finger decreases linearly along at least a portion of a length of the second layer.

14. The filter device of claim 10 , wherein, for at least one of the plurality of acoustic resonators, a portion of the second layer of the at least one interleaved finger is curved.

15. The filter device of claim 10 , wherein, for at least one of the plurality of acoustic resonators, the width of the second layer of the at least one interleaved finger increases along a first portion of the second layer and decreases along a second portion of the second layer.

16. The filter device of claim 10 , wherein the plurality of acoustic resonators comprises at least one first acoustic resonator and at least one second acoustic resonator, wherein a dielectric layer is deposited over the at least one first acoustic resonator and not deposited over the at least one second acoustic resonator.

17. The filter device of claim 10 , wherein, for at least one of the plurality of acoustic resonators, the width of the second layer along a length of the at least one interleaved finger is less than or equal to the width of the first layer.

18. The filter device of claim 10 , wherein at least one of the plurality of acoustic resonators further comprises an adhesion layer between the first layer of the at least one interleaved and the piezoelectric layer.

Assignees

• Murata Manufacturing Co

Inventors

• Plesski Viktor
• Koskela Julius

Classifications

• H03H9/02015

  Characteristics of piezoelectric layers, e.g. cutting angles · CPC title

• H03H9/568

  consisting of a ladder configuration · CPC title

• H03H9/02228

  Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer · CPC title

• H03H9/205

  having multiple resonators (crystal tuning forks H03H9/21) · CPC title

• H03H2003/0478

  in a process for mass production · CPC title