Ion implanter, ion implantation method, and semiconductor device manufacturing method

Patent metadata

Field	Value
Publication number	US-12255039-B2
Application number	US-202117512302-A
Country	US
Kind code	B2
Filing date	Oct 27, 2021
Priority date	Oct 28, 2020
Publication date	Mar 18, 2025
Grant date	Mar 18, 2025

Abstract

An ion implanter includes a crucible provided inside a vacuum chamber, and including an internal space configured to accommodate a solid sample which is a raw material of a source gas, a laser source provided outside the vacuum chamber, and irradiating the crucible with a laser beam, an arc chamber including an internal space for converting the source gas into plasma to generate ions, and in which an ion beam is extracted from the internal space, and a nozzle connecting the internal space of the crucible and the internal space of the arc chamber, and introducing the source gas vaporized in the internal space of the crucible into the internal space of the arc chamber.

First claim

What is claimed is:

1. An ion implanter comprising:
a crucible provided inside a vacuum chamber, and including an internal space configured to accommodate a solid sample which is a raw material of a source gas;
a laser source provided outside the vacuum chamber, and irradiating the crucible with a laser beam;
an arc chamber including an internal space for converting the source gas into plasma to generate ions, and in which an ion beam is extracted from the internal space; and
a nozzle connecting the internal space of the crucible and the internal space of the arc chamber, and introducing the source gas vaporized in the internal space of the crucible into the internal space of the arc chamber.

2. The ion implanter according to claim 1 , further comprising:
a muffle provided on an outer periphery of the crucible, and including an opening through which the laser beam passes.

3. The ion implanter according to claim 2 , further comprising:
a thermal reflector provided between the crucible and the muffle, and including an opening through which the laser beam passes.

4. The ion implanter according to claim 3 , further comprising:
a cover provided outside the muffle, and including an opening through which the laser beam passes.

5. The ion implanter according to claim 1 , further comprising:
an electric heater heating the nozzle.

6. The ion implanter according to claim 1 ,
wherein a bottom portion of the crucible located on a side opposite to the nozzle is irradiated with the laser beam.

7. The ion implanter according to claim 1 ,
wherein the laser source outputs the laser beam having an output selected from a range of 0.1 kW or higher and 10 kW or lower, and having a wavelength range selected from a range of 200 nm or larger and 2,000 nm or smaller.

8. The ion implanter according to claim 1 ,
wherein the crucible is made of graphite.

9. The ion implanter according to claim 1 , wherein the laser beam from the laser source is irradiated onto the crucible through a vacuum window provided in the vacuum chamber.

10. The ion implanter according to claim 9 , further comprising a cooling path through which a fluid for cooling the vacuum window passes.

11. The ion implanter according to claim 3 , further comprising a support member disposed outside the nozzle,
wherein the thermal reflector has an open end, a fixed end and a flange extending outward in the fixed end,
wherein the thermal reflector extends from the open end to the fixed end, and
wherein the thermal reflector is fixed by attaching the flange to the support member.

12. The ion implanter according to claim 11 , further comprising a low thermal conductivity plate inserted between the thermal reflector and the support member.

13. The ion implanter according to claim 12 , wherein the low thermal conductivity plate comprises zirconia.

14. The ion implanter according to claim 4 , further comprising a support member disposed outside the nozzle,
wherein the muffle has an open end, a fixed end and a flange extending outward in the fixed end,
wherein the muffle extends from the open end to the fixed end, and
wherein the muffle is fixed by attaching the flange to the support member.

Assignees

• Sumitomo Heavy Industries

Inventors

• Hirose Sayumi

Classifications

• H10P30/20

  into semiconductor materials, e.g. for doping · CPC title

• H01J27/20

  using particle {beam} bombardment, e.g. ionisers · CPC title

• H01J2237/31701

  Ion implantation · CPC title

• H01J37/32412

  Plasma immersion ion implantation · CPC title

• H01J2237/061

  Construction · CPC title