Self-tuning N-path filter
US-11139847-B2 · Oct 5, 2021 · US
US12250015B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12250015-B2 |
| Application number | US-202217903970-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 6, 2022 |
| Priority date | Sep 7, 2021 |
| Publication date | Mar 11, 2025 |
| Grant date | Mar 11, 2025 |
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Front-end circuitry is difficult to design for high sample rate, wide bandwidth receivers with high performance requirements on noise and linearity. One exemplary front-end circuitry is integrated on-chip with the RF ADC in a receiver, and the circuitry implements ESD protection, attenuation, and gain. The circuitry includes a multi-tap filter with LC circuits, and the filter implements a highly linear filter. Advantageously, the capacitors in the LC circuits are also used for ESD protection. Additionally, tunable attenuator cells are implemented across the multi-tap filter to provide a wide range of variable attenuation. The circuitry can further include a fixed or variable gain stage at the output. The resulting circuitry offers variable gain and attenuation while meeting bandwidth, noise, and linearity requirements.
Opening claim text (preview).
What is claimed is: 1. A front-end at an input of a radio-frequency analog-to-digital converter of a receiver, the front-end comprising: a multi-tap filter comprising inductor-capacitor circuits; attenuator cells distributed across taps of the multi-tap filter; electrostatic discharge protection circuitry integrated with the multi-tap filter, wherein the electrostatic discharge protection circuitry comprises a first segment upstream of a first inductor of the multi-tap filter, and a second segment downstream of the first inductor; and a gain stage at an output of the multi-tap filter. 2. The front-end of claim 1 , wherein the multi-tap filter includes five shunt capacitors and four inductors. 3. The front-end of claim 1 , wherein the multi-tap filter implements a 9 th order symmetrical Chebyshev filter. 4. The front-end of claim 1 , wherein one or more ones of the attenuator cells has programmable attenuation. 5. The front-end of claim 1 , wherein one or more ones of the attenuator cells is switchable to be on or off. 6. The front-end of claim 1 , wherein the attenuator cells comprises one attenuator cell having a Π-topology and three attenuator cells having a T-topology. 7. The front-end of claim 1 , wherein each attenuator cell includes a series resistance and a shunt resistance. 8. The front-end of claim 1 , wherein each attenuator cell includes a bypass switch to short input and output nodes of the attentuator cell. 9. The front-end of claim 1 , wherein the front-end is on-chip with the radio-frequency analog-to-digital converter. 10. The front-end of claim 1 , wherein the attenuator cells are tunable based on an automatic gain control signal. 11. The front-end of claim 1 , wherein the gain stage provides a variable gain based on an automatic gain control signal. 12. A front-end at an input of a radio-frequency analog-to-digital converter of a receiver, the front-end comprising: a multi-tap filter comprising inductor-capacitor circuits; attenuator cells distributed across taps of the multi-tap filter, wherein the attenuator cells comprise a first attenuator cell, the first attenuator cell comprising: at least one transistor having a bootstrapped gate to provide a series resistance; a shunt path to provide a shunt resistance, the shunt path comprising a shunt transistor; and a bypass switch comprising a bypass transistor having a gate driven by a control signal, wherein the bypass transistor shorts an input node of the first attenuator cell and an output node of the first attenuator cell when the bypass transistor is on; electrostatic discharge protection circuitry integrated with the multi-tap filter; and a gain stage at an output of the multi-tap filter. 13. The front-end of claim 12 , wherein the at least one transistor is biased to be constantly on during operation. 14. The front-end of claim 12 , wherein the at least one transistor is bootstrapped to the input of the first attenuator cell. 15. The front-end of claim 12 , wherein the bypass transistor is bootstrapped to an input of the first attenuator cell. 16. The front-end of claim 12 , wherein the shunt transistor is bootstrapped to a drain of the shunt transistor. 17. The front-end of claim 12 , wherein the electrostatic discharge protection circuitry comprises a first segment upstream of a first inductor of the multi-tap filter, and a second segment downstream of the first inductor. 18. A front-end at an input of a radio-frequency analog-to-digital converter of a receiver, the front-end comprising: a multi-tap filter comprising inductor-capacitor circuits; attenuator cells distributed across taps of the multi-tap filter; electrostatic discharge protection circuitry integrated with the multi-tap filter; a gain stage at an output of the multi-tap filter; and a termination resistor coupled to an input of the gain stage, wherein the front end is differential, and wherein the termination resistor has a resistance of less than 100Ω, wherein the front-end is on-chip with the radio-frequency analog-to-digital converter, and wherein the front-end has a bandwidth of greater than 30 gigahertz. 19. The front-end of claim 18 , wherein the resistance of the termination resistor is 50 Ω. 20. The front-end of claim 18 , further A front-end at an input of a radio-frequency analog-to-digital converter of a receiver, the front-end comprising: a multi-tap filter comprising inductor-capacitor circuits; attenuator cells distributed across taps of the multi-tap filter; electrostatic discharge protection circuitry integrated with the multi-tap filter; a gain stage at an output of the multi-tap filter; and a termination resistor coupled to an input of the gain stage, wherein the front end is single-ended, and wherein the termination resistor has a resistance of less than 50Ω, wherein the front-end is on-chip with the radio-frequency analog-to-digital converter, and wherein the front-end has a bandwidth of greater than 30 gigahertz. 21. The front-end of claim 20 , wherein the resistance of the termination resistor is 25 Ω.
Supply circuits (converters H02M; filters therefor H02M1/14; voltage stabilisers G05F1/46) · CPC title
Special circuits to enhance selectivity of receivers not otherwise provided for (resonant circuits H03H) · CPC title
Input circuits, e.g. for coupling to an antenna or a transmission line (coupling networks between antennas or lines and receivers independent of the nature of the receiver H03H) · CPC title
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