Batch type substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-12243724-B2
Application number	US-202318108009-A
Country	US
Kind code	B2
Filing date	Feb 9, 2023
Priority date	Feb 10, 2022
Publication date	Mar 4, 2025
Grant date	Mar 4, 2025

Abstract

Provided is a batch type substrate processing apparatus that generates plasma by a plurality of electrodes to perform a processing process on a substrate. The batch type substrate processing apparatus includes a reaction tube, a plurality of electrodes disposed to be spaced apart from each other, and an electrode protection part configured to protect the plurality of electrodes. The plurality of electrodes includes first and second power supply electrodes spaced apart from each other, and a ground electrode provided between the first power supply electrode and the second power supply electrode. The electrode protection part includes a plurality of first electrode protection tubes provided in the first and second power supply electrodes, respectively, a second electrode protection tube provided in the ground electrode, and a plurality of connection tubes configured to connect each of the plurality of first electrode protection tubes to the second electrode protection tube so as to communicate with each other.

First claim

What is claimed is:

1. A batch type substrate processing apparatus comprising:
a reaction tube having a processing space in which a plurality of substrates are accommodated;
a plurality of electrodes extending along a longitudinal direction of the reaction tube and disposed to be spaced apart from each other; and
an electrode protection part configured to protect the plurality of electrodes,
wherein the plurality of electrodes comprise:
first and second power supply electrodes spaced apart from each other; and
a ground electrode provided between the first power supply electrode and the second power supply electrode,

wherein the electrode protection part comprises:
a plurality of first electrode protection tubes provided in the first and second power supply electrodes, respectively;
a second electrode protection tube provided in the ground electrode; and
a plurality of connection tubes configured to connect each of the plurality of first electrode protection tubes to the second electrode protection tube so as to communicate with each other,
wherein the substrate processing apparatus further comprises:
a cooling gas supply part configured to supply a cooling gas into the plurality of first electrode protection tubes and the second electrode protection tube; and
a cooling gas discharge part configured to discharge the cooling gas from the plurality of first electrode protection tubes and the second electrode protection tube so as to generate a flow of the cooling gas,
wherein a flow rate of the cooling gas in each of the first electrode protection tubes is less than that of the cooling gas in the second electrode protection tube.

2. The batch type substrate processing apparatus of claim 1 , wherein the plurality of electrodes generate capacitively coupled plasma (CCP) in a spaced space between the first power supply electrode and the ground electrode and a spaced space between the second power supply electrode and the ground electrode.

3. The batch type substrate processing apparatus of claim 1 , wherein the cooling gas supply part is connected to the second electrode protection tube, and
the cooling gas discharge part is connected to each of the plurality of first electrode protection tubes.

4. The batch type substrate processing apparatus of claim 3 , wherein the cooling gas discharge part comprises an exhaust line connected to each of the plurality of first electrode protection tubes.

5. The batch type substrate processing apparatus of claim 4 , wherein the cooling gas discharge part further comprises a diameter adjusting member configured to adjust an inner diameter of the exhaust line.

6. The batch type substrate processing apparatus of claim 4 , wherein the exhaust line comprises:
a first exhaust line connected to a pumping port; and
a second exhaust line branched with the first exhaust line,
wherein the cooling gas discharge part further comprises:
a first valve provided in the first exhaust line; and
a second valve provided in the second exhaust line.

7. The batch type substrate processing apparatus of claim 6 , wherein the first valve is opened when power is supplied to the first and second power supply electrodes, and
the second valve is opened when power is not supplied to the first and second power supply electrodes.

8. The batch type substrate processing apparatus of claim 4 , wherein the exhaust line has an exhaust pressure of approximately 0.15 mbar or more per 1 slm of a flow rate of the cooling gas.

9. The batch type substrate processing apparatus of claim 3 , wherein each of the plurality of connection tubes has an inner diameter less than that of each of the plurality of first electrode protection tubes and the second electrode protection tube.

10. The batch type substrate processing apparatus of claim 1 , wherein the cooling gas comprises an inert gas.

11. The batch type substrate processing apparatus of claim 1 , wherein the cooling gas supply part is configured to supply the cooling gas so that a flow rate of the cooling gas when power is not supplied to the first and second power supply electrodes is less than that of the cooling gas when power is supplied to the first and second power supply electrodes.

12. The batch type substrate processing apparatus of claim 1 , further comprising:
a plurality of sealing caps which are connected to the plurality of first electrode protection tubes, respectively, and in which an exhaust port, through which the cooling gas is discharged, is provided in a sidewall of an inner space communicating with each of the first electrode protection tubes; and
a second sealing cap which is connected to the second electrode protection tube and in which an inlet, through which the cooling gas is supplied, is provided in a sidewall of an inner space communicating with the second electrode protection tube.

Assignees

• Eugene Technology Co Ltd

Inventors

• Kang Sung Ho
• Kim Chang Dol
• Kim Jun
• Yoo Suk Bum
• Jeong Choon Sik

Classifications

• H01J37/32091 Primary

  the radio frequency energy being capacitively coupled to the plasma · CPC title

• H01J37/3244

  Gas supply means · CPC title

• H01J2237/002

  Cooling arrangements · CPC title

• H01J37/32559 Primary

  Protection means, e.g. coatings · CPC title

• H01J2237/3321

  CVD [Chemical Vapor Deposition] · CPC title