Laminate, electron source and electronic device containing laminate, and production method and cleaning method for laminate

Patent metadata

Field	Value
Publication number	US-12237141-B2
Application number	US-202218694081-A
Country	US
Kind code	B2
Filing date	Sep 20, 2022
Priority date	Sep 22, 2021
Publication date	Feb 25, 2025
Grant date	Feb 25, 2025

Abstract

The purpose of the present invention, relating to lanthanide boride, which is known as a low work function material, is to provide a novel low work function material with low chemical reactivity, in particular a low work function material of which the material surface, after being exposed to atmospheric gases, can be cleaned at a heating temperature lower than in the prior art. The present invention is a laminate containing a lanthanide boride film formed on a substrate, the surface of said film being covered by a thin film, wherein the thin film is a monatomic layer of a hexagonal boron nitride thin film.

First claim

The invention claimed is:

1. A laminate comprising a lanthanoid boride film formed on a substrate, wherein a surface of the lanthanoid boride film is coated with a thin film, and
wherein the thin film is a monoatomic layer hexagonal boron nitride thin film.

2. The laminate according to claim 1 , wherein the lanthanoid boride film is a lanthanum hexaboride film.

3. The laminate according to claim 1 , wherein the lanthanoid boride film has a thickness of 1 nm or more and 100 nm or less.

4. The laminate according to claim 1 , wherein a work function of the laminate after being exposed to an ambient gas and then performing vacuum heating at 500° C. or higher and 600° C. or less is approximately the same as a work function of the laminate before being exposed to the ambient gas.

5. An electron source comprising the laminate according to claim 1 .

6. An electronic device comprising the laminate according to claim 1 .

7. A method for producing the laminate according to claim 1 , the method comprising:
forming a lanthanoid boride film containing nitrogen on a substrate; and
diffusing the nitrogen in the lanthanoid boride film by heating the lanthanoid boride film in a temperature range of higher than 750° C. and lower than 1200° C. in vacuum, reacting the nitrogen with boron atoms contained in the lanthanoid boride film on a surface of the lanthanoid boride film to precipitate a monoatomic layer hexagonal boron nitride thin film on the surface of the lanthanoid boride film, and coating the surface of the lanthanoid boride film with the precipitated monoatomic layer hexagonal boron nitride thin film.

8. The method according to claim 7 , wherein the lanthanoid boride film containing the nitrogen is formed by: using a lanthanoid boride sintered body containing nitrogen as a target; and sputtering the target in an inert gas ambient.

9. The method according to claim 7 , wherein the substrate is a lanthanoid boride single crystal substrate or a SiO 2 substrate including a polycrystalline lanthanoid boride film, and
the lanthanoid boride film is formed by irradiating the surface of the substrate with nitrogen radicals.

10. The method according to claim 7 , wherein coating the surface of the lanthanoid boride film with the precipitated monoatomic layer hexagonal boron nitride thin film is performed by heating in vacuum in the range of 1×10 −9 Pa or higher and 1×10 −5 Pa or less for 5 minutes or more and 3 hours or less to diffuse the nitrogen.

11. A method for cleaning a laminate, comprising:
exposing the laminate in which a surface of a lanthanoid boride film formed on a substrate is coated with a thin film made of monoatomic layer hexagonal boron nitride to an ambient gas, and then subjecting the laminate contaminated with the ambient gas to vacuum heating at a low temperature of 500° C. or higher and 600° C. or less to clean the laminate.

12. The method for cleaning the laminate according to claim 11 , wherein the lanthanoid boride film is a lanthanum hexaboride film.

Assignees

• Nat Inst Materials Science

Inventors

• Nagaoka Katsumi
• Aizawa Takashi
• Ohmi Shun-Ichiro

Classifications

• H01J2237/06308

  Thermionic sources · CPC title

• H01J37/26

  Electron or ion microscopes; Electron or ion diffraction tubes · CPC title

• H01J9/04

  of thermionic cathodes · CPC title

• C23C14/582

  using electron bombardment · CPC title

• C23C14/586

  Nitriding · CPC title