Adaptive time sense parameters and overdrive voltage parameters for wordlines at corner temperatures in a memory sub-system
US-2024311042-A1 · Sep 19, 2024 · US
US12237015B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12237015-B2 |
| Application number | US-202217888225-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 15, 2022 |
| Priority date | Aug 15, 2022 |
| Publication date | Feb 25, 2025 |
| Grant date | Feb 25, 2025 |
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Methods, systems, and apparatuses include determining an operation type for an operation. A sensing time is elected using the operation type. The operation is executed using the sensing time.
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What is claimed is: 1. A method comprising: determining an operation type of a plurality of operation types for an operation, wherein the operation is directed to a portion of memory and wherein the plurality of types includes a program operation type and a read operation type; selecting a sensing time of a plurality of sensing times using the operation type, wherein a read sensing time for the read operation type is smaller than a program sensing time for the program operation type; and executing the operation using the sensing time. 2. The method of claim 1 , further comprising: receiving a command, wherein the command is directed to the portion of memory and wherein determining the operation type uses the received command. 3. The method of claim 2 , wherein the portion of memory is composed of a plurality of wordlines, the method further comprising: determining a wordline of the plurality of wordlines using the command, wherein selecting the sensing time further uses the wordline. 4. The method of claim 1 , further comprising: determining that a program buffer satisfies a fullness threshold; and determining the operation type is the program operation type in response to the buffer being full. 5. The method of claim 1 , wherein the portion of memory comprises a plurality of cells, and wherein the sensing time is a time threshold voltages are applied to determine a value stored in a cell of the plurality of cells. 6. The method of claim 1 , further comprising: determining that the operation is complete; and selecting a sensing time of a plurality of sensing times using a second operation type different than the operation type in response to determining that the operation is complete. 7. The method of claim 1 , further comprising: receiving results of a data integrity scan for the portion of memory; and determining the operation type is the program operation type in response to the results of the data integrity scan indicating there are errors included in the portion of memory. 8. A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to: determine an operation type of a plurality of operation types for an operation, wherein the operation is directed to a portion of memory and wherein the plurality of types includes a program operation type and a read operation type; select a sensing time of a plurality of sensing times using the operation type, wherein a read sensing time for the read operation type is smaller than a program sensing time for the program operation type; and execute the operation using the sensing time. 9. The non-transitory computer-readable storage medium of claim 8 , wherein the processing device is further to: receive a command, wherein the command is directed to the portion of memory and wherein determining the operation type uses the received command. 10. The non-transitory computer-readable storage medium of claim 9 , wherein the portion of memory is composed of a plurality of wordlines and the processing device is further to: determine a wordline of the plurality of wordlines using the command, wherein selecting the sensing time further uses the wordline. 11. The non-transitory computer-readable storage medium of claim 8 , wherein the processing device is further to: determine that a program buffer satisfies a fullness threshold; and determine the operation type is the program operation type in response to the buffer being full. 12. The non-transitory computer-readable storage medium of claim 11 , wherein the portion of memory comprises a plurality of cells and the sensing time is a time threshold voltages are applied to determine a value stored in a cell of the plurality of cells. 13. The non-transitory computer-readable storage medium of claim 8 , wherein the processing device is further to: determine that the operation is complete; and select a sensing time of a plurality of sensing times using a second operation type different than the operation type in response to determining that the operation is complete. 14. The non-transitory computer-readable storage medium of claim 8 , wherein the processing device is further to: receive results of a data integrity scan for the portion of memory; and determine the operation type is the program operation type in response to the results of the data integrity scan indicating there are errors included in the portion of memory. 15. A system comprising: a plurality of memory devices; and a processing device, operatively coupled with the plurality of memory devices, to: receive a command, wherein the command is directed to a portion of memory; determine an operation type of a plurality of operation types for an operation using the command, wherein the operation is directed to the portion of memory and wherein the plurality of types includes a program operation type and a read operation type; select a sensing time of a plurality of sensing times using the operation type, wherein a read sensing time for the read operation type is smaller than a program sensing time for the program operation type; and execute the operation using the sensing time. 16. The system of claim 15 , wherein the portion of memory is composed of a plurality of wordlines and the processing device is further to: determine a wordline of the plurality of wordlines using the command, wherein selecting the sensing time further uses the wordline. 17. The system of claim 15 , wherein the processing device is further to: determine that a program buffer satisfies a fullness threshold; and determine the operation type is the program operation type in response to the buffer being full. 18. The system of claim 17 , wherein the portion of memory comprises a plurality of cells and the sensing time is a time threshold voltages are applied to determine a value stored in a cell of the plurality of cells. 19. The system of claim 15 , wherein the processing device is further to: determine that the operation is complete; and select a sensing time of a plurality of sensing times using a second operation type different than the operation type in response to determining that the operation is complete. 20. The system of claim 15 , wherein the processing device is further to: receive results of a data integrity scan for the portion of memory; and determine the operation type is the program operation type in response to the results of the data integrity scan indicating there are errors included in the portion of memory.
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