Structure for producing diamond and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-12227828-B2
Application number	US-202117507417-A
Country	US
Kind code	B2
Filing date	Oct 21, 2021
Priority date	Oct 22, 2020
Publication date	Feb 18, 2025
Grant date	Feb 18, 2025

Abstract

Provided are a structure for producing a high-quality single crystal diamond, and a method for manufacturing the structure for producing diamond. A structure for producing a diamond is composed of a base substrate and an Ir thin film formed on the base substrate. The thermal expansion coefficient of the base substrate is 5 times or less of the thermal expansion coefficient of diamond and the melting point of the base substrate is 700° C. or higher. The peak angle in the X-ray diffraction pattern of the Ir thin film is different from the peak angle in the X-ray diffraction pattern of the base substrate.

First claim

The invention claimed is:

1. A structure for producing a diamond composed of a base substrate and an Ir thin film formed on the base substrate,
wherein the thermal expansion coefficient of the base substrate is 5 times or less of the thermal expansion coefficient of diamond;
wherein the melting point of the base substrate is 700° C. or higher;
wherein the Ir thin film is a thin film formed on a dummy substrate that is different from the base substrate, and the Ir thin film is formed on the base substrate by bonding the Ir thin film to the base substrate;
wherein all peak angles in an X-ray diffraction pattern of the Ir thin film shift randomly from all peak angles in an X-ray diffraction pattern of the base substrate; and
there is no relationship between a crystal orientation of the Ir thin film and a crystal orientation of the base substrate.

2. The structure for producing a diamond according to claim 1 , wherein the full width at half maximum of the (002) plane in a rocking curve of the Ir thin film which is taken from the X-ray diffraction pattern of the Ir thin film is 700 arcsec or less.

3. The structure for producing a diamond according to claim 1 , wherein the Ir thin film has a film thickness of 1 μm or less.

4. The structure for producing a diamond according to claim 1 , wherein the base substrate is Si or diamond.

5. The structure for producing a diamond according to claim 2 , wherein the Ir thin film has a film thickness of 1 μm or less.

6. The structure for producing a diamond according to claim 2 , wherein the base substrate is Si or diamond.

7. The structure for producing a diamond according to claim 3 , wherein the base substrate is Si or diamond.

8. The structure for producing a diamond according to claim 5 , wherein the base substrate is Si or diamond.

Assignees

• National Univ Corporation Nagaoka Univ Of Technology
• Sawabe Atsuhito
• Kimura Yutaka
• Univ Waseda
• Disco Corp

Inventors

• Aida Hideo
• Sawabe Atsuhito
• Kimura Yutaka
• Mizuno Jun
• Oshima Ryuji

Classifications

• C30B25/186

  being specially pre-treated by, e.g. chemical or physical means · CPC title

• C30B23/025

  characterised by the substrate · CPC title

• C30B29/02

  Elements · CPC title

• C30B33/00

  After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence) · CPC title

• Y10T428/31678

  Of metal · CPC title