Organic electroluminescence display device

Patent metadata

Field	Value
Publication number	US-12225750-B2
Application number	US-202418407374-A
Country	US
Kind code	B2
Filing date	Jan 8, 2024
Priority date	Apr 24, 2018
Publication date	Feb 11, 2025
Grant date	Feb 11, 2025

Abstract

An organic electroluminescence display device includes: a substrate; a first electrode including a first sub-electrode and a second sub-electrode spaced apart from each other and on the substrate; a first light emitting unit on the first electrode; a charge generation unit on the first light emitting unit; a second light emitting unit on the charge generation unit; and a second electrode on the second light emitting unit, wherein the first light emitting unit comprises a first light emitting layer correspondingly on the first sub-electrode; and a second light emitting layer correspondingly on the second sub-electrode, wherein the second light emitting unit comprises a third light emitting layer correspondingly on the first light emitting layer; and a fourth light emitting layer correspondingly on the second light emitting layer.

First claim

What is claimed is:

1. A light emitting display device comprising:
a display panel including a first light emitting region, a second light emitting region, a third light emitting region, and a non-light emitting region; and
an additional member on the display panel,
wherein the display panel comprises:
a substrate comprising a base layer and a circuit layer on the base layer;
a first electrode comprising a first sub-electrode on the first light emitting region; a second sub-electrode on the second light emitting region; and a third sub-electrode on the third light emitting region;
a pixel defining layer on the non-light emitting region;
a first light emitting unit on the first electrode;
a charge generation unit comprising an n-type charge generation layer on the first light emitting unit and a p-type charge generation layer on the n-type charge generation layer;
a second light emitting unit on the charge generation unit; and
a second electrode on the second light emitting unit,
wherein the first light emitting unit comprises a first red light emitting layer on the first sub-electrode, a first green light emitting layer on the second sub-electrode, and a first blue light emitting layer on the third sub-electrode,
wherein the n-type charge generation layer comprises an electron transport material and an n-type dopant, and the p-type charge generation layer comprises a hole transport material and a p-type dopant,
wherein the second light emitting unit comprises a second red light emitting layer on the first red light emitting layer, a second green light emitting layer on the first green light emitting layer; and a second blue light emitting layer on the first blue light emitting layer, and
wherein a portion of the n-type charge generation layer is located on the pixel defining layer, and the p-type charge generation layer is not located on the pixel defining layer.

2. The light emitting display device of claim 1 , wherein the pixel defining layer comprises silicon nitride (SiNx), silicon oxide (SiOx), or silicon oxynitride (SiOxNy).

3. The light emitting display device of claim 1 , wherein the pixel defining layer comprises a polyacrylate resin or a polyimide resin.

4. The light emitting display device of claim 3 , wherein the pixel defining layer further comprises at least one selected from an inorganic material, a light absorbing material, a black pigment, or a black dye.

5. The light emitting display device of claim 1 , wherein a doping ratio of the p-type dopant in the p-type charge generation layer is 2 wt % to 15 wt %.

6. The light emitting display device of claim 1 , wherein
the n-type dopant is an inorganic material, and
the p-type dopant is an organic material or an inorganic material.

7. The light emitting display device of claim 6 , wherein
the n-type dopant is Yb, and
the p-type dopant is the organic material comprising a cyano group and a fluorine atom.

8. The light emitting display device of claim 6 , wherein the p-type dopant is at least one selected from a quinone derivative, a metal oxide, a cyano group-containing compound, or a metal halide.

9. The light emitting display device of claim 1 , wherein a conductivity of the p-type charge generation layer is equal to or less than about 1.5×10 −6 s/m.

10. The light emitting display device of claim 1 , wherein
the additional member is at least one selected from an input sensing unit, an optical member, or a window member.

11. The light emitting display device of claim 1 , wherein a thickness of the n-type charge generation layer is 50 Å to 300 Å, and a thickness of the p-type charge generation layer is 50 Å to 200 Å.

12. The light emitting display device of claim 1 , wherein a thickness of the first red light emitting layer is greater than a thickness of the first green light emitting layer, and the thickness of the first green light emitting layer is greater than a thickness of the first blue light emitting layer, and
wherein a thickness of the second red light emitting layer is greater than a thickness of the second green light emitting layer, and the thickness of the second green light emitting layer is greater than a thickness of the second blue light emitting layer.

13. The light emitting display device of claim 1 , wherein
the base layer is a glass substrate, a metal substrate, or a plastic substrate, and
the circuit layer comprises a first intermediate inorganic film and a second intermediate inorganic film on the first intermediate inorganic film.

14. The light emitting display device of claim 13 , wherein the circuit layer comprises a plurality of transistors on a buffer film between the base layer and the circuit layer, and
wherein the buffer film comprises silicon nitride (SiNx), silicon oxide (SiOx), or silicon oxynitride (SiOxNy).

15. The light emitting display device of claim 1 , wherein the p-type charge generation layer comprises:
a first p-type charge generation layer corresponding to the first light emitting region;
a second p-type charge generation layer corresponding to the second light emitting region; and
a third p-type charge generation layer corresponding to the third light emitting region.

16. The light emitting display device of claim 15 , wherein the first p-type charge generation layer, the second p-type charge generation layer, and the third p-type charge generation layer are spaced from each other.

17. The light emitting display device of claim 1 , wherein a doping ratio of the n-type dopant is 1 wt % to 10 wt %.

18. The light emitting display device of claim 1 , wherein
the first blue light emitting layer is configured to emit a first blue light having a first central wavelength, and the second blue light emitting layer is configured to emit a second blue light having a second central wavelength different from the first central wavelength.

19. A light emitting display device comprising:
a display panel including a first light emitting region, a second light emitting region, a third light emitting region, and a non-light emitting region; and
a protective member on the display panel,
wherein the display panel comprises:
a substrate comprising a base layer and a circuit layer on the base layer;
a first electrode comprising a plurality of sub-electrodes spaced from each other on the substrate;
a pixel defining layer located on a part of each of the sub-electrodes on the substrate;
a first light emitting unit comprising a first red light emitting layer corresponding to the first light emitting region, a first green light emitting layer corresponding to the second light emitting region, and a first blue light emitting layer corresponding to the third light emitting region on the first electrode;
a charge generation unit comprising an n-type charge generation layer on the first light emitting unit and a p-type charge generation layer on the n-type charge generation layer;
a second light emitting unit comprising a second red light emitting layer corresponding to the first light emitting region, a second green light emitting layer corresponding to the second light emitting region, and a second blue light emitting layer corresponding to the third light emitting region on the charge generation unit; and
a second electrode on the second light emitting unit, and

wherein a portion of the n-type charge generation layer is located on the pixel defining layer, and the p-type charge generation layer is not located on the pixel defining layer.

20. The light emitting display device of cla

Assignees

• Samsung Display Co Ltd

Inventors

• Yang Jungjin
• Kim Myunghwan
• Kim Seohyun
• Kim Ji-Young
• Park Jinwoo
• Song Wonjun
• Yoo Taewoong
• Youn Soojung
• Lee Kwanhee
• Lee Seokjae

Classifications

• H10K59/12

  Active-matrix OLED [AMOLED] displays · CPC title

• H10K50/805 Primary

  Electrodes · CPC title

• H10K59/35 Primary

  comprising red-green-blue [RGB] subpixels · CPC title

• H10K59/32

  Stacked devices having two or more layers, each emitting at different wavelengths · CPC title

• H10K50/16

  Electron transporting layers · CPC title