Light-emitting element, light-emitting device, electronic device, and lighting device
US-2016043338-A1 · Feb 11, 2016 · US
US9634293B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9634293-B2 |
| Application number | US-201514847867-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 8, 2015 |
| Priority date | Sep 30, 2014 |
| Publication date | Apr 25, 2017 |
| Grant date | Apr 25, 2017 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
An organic light emitting display (OLED) device can include a substrate on which first to third light emitting portions are defined, first electrodes respectively positioned on the first to third light emitting portions, a first stack formed on the first electrodes and including first, second and third light emitting layers corresponding to the first, second and third light emitting portions, respectively, an N-type charge generation layer (CGL) positioned on the first stack, a transition metal oxide layer positioned on the N-type CGL, a second stack positioned on the transition metal oxide layer and including fourth, fifth and sixth light emitting layers corresponding to the first, second and third light emitting portions, respectively, and a second electrode positioned on the second stack.
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing an organic light emitting display (OLED) device, the method comprising: forming first electrodes on a substrate on which first to third light emitting portions are defined, respectively; forming a first stack on the first electrodes by forming a first light emitting layer to correspond to the first light emitting portion, a second light emitting layer to correspond to the second light emitting portion, and a third light emitting layer to correspond to the third light emitting portion; forming an N-type charge generation layer (CGL) on the first stack; forming a transition metal oxide layer on the N-type CGL, the transition metal oxide layer has a work function ranging from about 5.0 to 5.9 eV by plasma-treating the transition metal oxide layer with O2, N2, or argon (Ar), or a mixture gas thereof; forming a second stack on the transition metal oxide layer by forming a fourth light emitting layer to correspond to the first light emitting portion, a fifth light emitting layer to correspond to the second light emitting portion, and a sixth light emitting layer to correspond to the third light emitting portion; and forming a second electrode on the second stack. 2. The method of claim 1 , wherein a hole injection layer and a first hole transportation layer are further formed between the first electrodes and the first to third light emitting layers, a second hole transportation layer is further formed between the transition metal oxide layer and the fourth to sixth light emitting layers, and an electron transportation layer and an electron injection layer are further formed between the fourth to sixth light emitting layers and the second electrode. 3. The method of claim 1 , wherein the hole injection layer, the first hole transportation layer, and the first to third light emitting layers are formed through a soluble process, the N-type CGL and the transition metal oxide layer are formed through a deposition process, the second hole transportation layer and the fourth to sixth light emitting layers are formed through a soluble process, and the electron transportation layer, the electron injection layer, and the second electrode are formed through a deposition process. 4. The method of claim 1 , wherein surface roughness, hydrophilicity, or morphology of the transition metal oxide layer is adjusted by plasma-treating the transition metal oxide layer with O 2 , N 2 , or argon (Ar), or a mixture gas thereof. 5. The method of claim 1 , wherein hydrophobicity of the transition metal oxide layer is adjusted by plasma-treating the transition metal oxide layer with a CF 4 gas.
Related publications grouped by family.
Answers are generated from the same data shown on this page.