Power-efficient microwave plasma jet based on evanescent-mode cavity technology

US12224474B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12224474-B2
Application numberUS-202218075523-A
CountryUS
Kind codeB2
Filing dateDec 6, 2022
Priority dateDec 7, 2021
Publication dateFeb 11, 2025
Grant dateFeb 11, 2025

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Plasma jet assemblies utilizing evanescent mode cavity resonators, and methods of making the same and using the same, are described.

First claim

Opening claim text (preview).

What is claimed is: 1. A plasma jet assembly comprising: a cavity resonator; a metallic material disposed in the cavity resonator; a radio frequency port configured to receive a radio frequency connector configured to couple electromagnetic energy into the cavity resonator; and a gas channel within the metallic material and configured to direct a flow of a gas (i) to a space adjacent the metallic material where an electric field concentrates upon the coupling of electromagnetic energy from the radio frequency connector, and (ii) in a direction out of the plasma jet assembly. 2. The plasma jet assembly of claim 1 , wherein the cavity resonator is defined by an outer perimeter of via-holes formed through a first substrate and a second substrate. 3. The plasma jet assembly of claim 2 , wherein the metallic material comprises an inner perimeter of via-holes formed through at least the first substrate within the outer perimeter of via-holes. 4. The plasma jet assembly of claim 3 , wherein the gas channel is defined by a central via-hole formed through the first substrate and the second substrate within the inner perimeter of via-holes. 5. The plasma jet assembly of claim 4 , wherein an input coupling line of the radio frequency port is disposed adjacent to the inner perimeter of via-holes without touching the inner perimeter of via-holes. 6. The plasma jet assembly of claim 1 , wherein the cavity resonator is defined by a base surface and cavity walls of a main body. 7. The plasma jet assembly of claim 6 , wherein the metallic material is a metallic post. 8. The plasma jet assembly of claim 7 , wherein the radio frequency connector has a radio frequency pin disposed adjacent to the metallic post without touching the metallic post. 9. The plasma jet assembly of claim 8 , further comprising a ceiling assembly having an inner surface and outer surface, the inner surface being disposed over the cavity resonator, and the ceiling assembly defining a plasma jet outlet. 10. The plasma jet assembly of claim 9 , wherein the space is formed between the metallic post and the ceiling assembly. 11. The plasma jet assembly of claim 10 , wherein the space is defined by a recess formed in the inner surface of the ceiling assembly. 12. A plasma jet assembly comprising: a first substrate; a second substrate disposed over the first substrate; an outer perimeter of via-holes formed through the first substrate and the second substrate; a cavity resonator formed within the outer perimeter of via-holes; an inner perimeter of via-holes formed through the first substrate and within the outer perimeter of via-holes; a radio frequency port disposed adjacent to the first substrate and the second substrate, the radio frequency port configured to receive a radio frequency connector configured to couple electromagnetic energy into the cavity resonator; and a central via-hole formed through the first substrate and the second substrate and within the inner perimeter of via-holes, the central via-hole configured to direct a flow of a gas (i) to a space within the inner perimeter of via-holes where an electric field concentrates upon the coupling of electromagnetic energy from the radio frequency connector, and (ii) in a direction through the central via-hole and out of the plasma jet assembly. 13. The plasma jet assembly of claim 12 , wherein: the first substrate defines a top side and a bottom side, and comprises a first microwave laminate; and the second substrate defines a top side and a bottom side, and comprises a second microwave laminate. 14. The plasma jet assembly of claim 13 , wherein the space includes a recess formed in the bottom side of the second substrate. 15. The plasma jet assembly of claim 12 , wherein the first substrate comprises a plurality of coupling via-holes formed therethrough and extending from the RF port toward the cavity resonator. 16. The plasma jet assembly of claim 12 , wherein a gas transport tube is disposed through the central via-hole. 17. A plasma jet assembly comprising: a cavity resonator defined by a base surface and cavity walls; a ceiling assembly having an inner surface and an outer surface, the inner surface disposed over the cavity resonator; a metallic post disposed in the cavity resonator; a radio frequency port configured to receive a radio frequency connector configured to couple electromagnetic energy into the cavity resonator; a space formed between the metallic post and the ceiling assembly; a plasma jet outlet defined by the ceiling assembly; and a gas channel within the metallic post and configured to direct a flow of a gas (i) to the space where an electric field concentrates upon the coupling of electromagnetic energy from the radio frequency connector, and (ii) in a direction through the plasma jet outlet and out of the plasma jet assembly. 18. The plasma jet assembly of claim 17 , wherein the space is defined by a recess formed in the inner surface of the ceiling assembly. 19. The plasma jet assembly of claim 17 , wherein the radio frequency connector has a radio frequency pin disposed adjacent to the metallic post without touching the metallic post. 20. The plasma jet assembly of claim 17 , wherein the metallic post is axially aligned with the gas channel.

Assignees

Inventors

Classifications

  • Cavity resonators · CPC title

  • Manufacturing frequency-selective devices (resonators H01P11/008) · CPC title

  • integrated in a substrate · CPC title

  • H01P1/219Primary

    Evanescent mode filters · CPC title

  • H01P7/04Primary

    Coaxial resonators · CPC title

Patent family

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Frequently asked questions

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What does patent US12224474B2 cover?
Plasma jet assemblies utilizing evanescent mode cavity resonators, and methods of making the same and using the same, are described.
Who is the assignee on this patent?
Univ Toledo
What technology area does this patent fall under?
Primary CPC classification H01P1/219. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 11 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).