Epitaxial structure having diffusion barrier layer

Patent metadata

Field	Value
Publication number	US-12224322-B2
Application number	US-202117238311-A
Country	US
Kind code	B2
Filing date	Apr 23, 2021
Priority date	Apr 24, 2020
Publication date	Feb 11, 2025
Grant date	Feb 11, 2025

Abstract

An epitaxial structure includes a substrate, a buffer layer, a channel layer, a barrier layer, a diffusion barrier layer, and a P-type gallium nitride layer sequentially stacked from bottom to top. The P-type gallium nitride layer has a first lattice constant. The diffusion barrier layer includes a chemical composition of In x1 Al y1 Ga z1 N, where x1+y1+z1=1, 0≤x1≤0.3, 0≤y1≤1.0, and 0≤z1≤1.0. The chemical composition of the diffusion barrier layer has a proportional relationship so that the diffusion barrier layer has a second lattice constant that matches the first lattice constant, and the second lattice constant is between 80% and 120% of the first lattice constant.

First claim

What is claimed is:

1. An epitaxial structure, comprising:
a substrate;
a buffer layer disposed on the substrate;
a channel layer disposed on the buffer layer;
a barrier layer disposed on the channel layer; and
a P-type gallium nitride layer disposed on the barrier layer, and the P-type gallium nitride layer having a first lattice constant;
wherein the epitaxial structure further comprises a diffusion barrier layer disposed between the barrier layer and the P-type gallium nitride layer, the diffusion barrier layer includes a chemical composition of In x1 Al y1 Ga z1 N, where x1+y1+z1=1, 0≤x1≤0.3, 0≤y1≤1.0, and 0≤z1≤1.0; wherein the chemical composition of the diffusion barrier layer has a proportional relationship, so that the diffusion barrier layer has a second lattice constant that matches the first lattice constant, and the second lattice constant is between 80% and 120% of the first lattice constant;
wherein the barrier layer includes a chemical composition of Al y2 Ga z2 N, where y2+z2=1, 0.1≤y2≤0.3, and 0<z2<1;
wherein the diffusion barrier layer including the chemical composition of In x1 Al y1 Ga z1 N is directly disposed on and connected to the barrier layer including the chemical composition of Al y2 Ga z2 N;
wherein at least a part of the aluminum (Al) content of the diffusion barrier layer is not less than 0.4 and is greater than the aluminum (Al) content of the barrier layer;
wherein the diffusion barrier layer is a multi-layer structure that has four layers to ten layers, and the aluminum (Al) content of the diffusion barrier layer is decreased along a thickness growth direction of the diffusion barrier layer; wherein an initial content of the aluminum (Al) content along the thickness growth direction is between 60% and 80%, a final content of the aluminum (Al) content along the thickness growth direction is between 0% and 20%, and a step change rate of the aluminum (Al) content in the multi-layer structure is reduced by 5% to 25% per step.

2. The epitaxial structure according to claim 1 , wherein the first lattice constant of the P-type gallium nitride layer is 3.2±0.3 Å, and the second lattice constant of the diffusion barrier layer is 3.2±0.3 Å.

3. The epitaxial structure according to claim 1 , wherein, in the diffusion barrier layer, the proportional relationship of the chemical composition is:
y1 and x1 satisfy the following relationship: y1=k1*x1, where 2≤k1≤8; and y1 and z1 satisfy the following relationship: y1*z1=k2, where 0.05≤k2≤0.3.

4. The epitaxial structure according to claim 1 , wherein, in the diffusion barrier layer, at least the part of the aluminum (Al) content enables a maximum energy gap of the diffusion barrier layer to be not less than 4.6 eV.

5. The epitaxial structure according to claim 1 , wherein, in the diffusion barrier layer, an initial content of the indium (In) content along the thickness growth direction is between 10% and 25%, and a final content of the indium (In) content along the thickness growth direction is between 0% and 10%; wherein an initial content of the gallium (Ga) content along the thickness growth direction is between 10% and 30%, and a final content of the gallium (Ga) content along the thickness growth direction is between 80% and 100%.

6. The epitaxial structure according to claim 5 , wherein an energy gap of the diffusion barrier layer is decreased in a stepwise manner the second lattice constant of the diffusion barrier layer is 3.2±0.3 Å, an initial energy gap of the diffusion barrier layer along the thickness growth direction is 5.0±0.2 eV, and an final energy gap of the diffusion barrier layer along the thickness growth direction is 3.5±0.2 eV.

7. The epitaxial structure according to claim 1 , wherein the P-type gallium nitride layer includes an acceptor doping element with a doping concentration greater than 1×10 18 atoms per cubic centimeter; wherein the acceptor doping element is at least one material selected from a group consisting of magnesium (Mg), carbon (C), calcium (Ca), iron (Fe), chromium (Cr), vanadium (V), manganese (Mn), and beryllium (Be).

Assignees

• Globalwafers Co Ltd

Inventors

• Lin Tzu-Yao
• Liu Jia-Zhe
• Shih Ying-Ru

Classifications

• H10P14/3444

  P-type · CPC title

• H10P14/3446

  Transition metal elements; Rare earth elements · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/3251

  consisting of three or more layers · CPC title

• H10P14/3254

  Graded layers · CPC title