Electronic device including channel layer including variable resistance and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-12207572-B2
Application number	US-202217674833-A
Country	US
Kind code	B2
Filing date	Feb 17, 2022
Priority date	Sep 13, 2021
Publication date	Jan 21, 2025
Grant date	Jan 21, 2025

Abstract

An electronic device includes a base element, a source electrode layer and a drain electrode layer disposed to be spaced apart from each other on the base element, a channel layer disposed between the source electrode layer and the drain electrode layer on the base element that accommodates metal ions, a metal ion conduction layer disposed on the channel layer, and a gate electrode layer disposed on the metal ion conduction layer. The channel layer includes a plurality of unit films and channel spaces between the plurality of unit films. The plurality of unit films are arranged to be parallel to a direction substantially perpendicular to a surface of the base element.

First claim

What is claimed is:

1. An electronic device comprising;
a base element;
a source electrode layer and a drain electrode layer disposed to be spaced apart from each other on the base element;
a channel layer, disposed between the source electrode layer and the drain electrode layer on the base element, that accommodates metal ions;
a metal ion conduction layer disposed on the channel layer; and
a gate electrode layer disposed on the metal ion conduction layer,
wherein the channel layer comprises a plurality of unit films and channel spaces between the plurality of unit films, and
wherein the plurality of unit films are disposed to be parallel to a direction substantially perpendicular to a surface of the base element.

2. The electronic device of claim 1 , wherein each of the plurality of unit films comprises metal chalcogenide.

3. The electronic device of claim 2 , wherein the metal chalcogenide comprises at least one selected from the group consisting of molybdenum disulfide (MoS 2 ), tungsten disulfide (WS 2 ), tin disulfide (SnS 2 ), molybdenum diselenide (MoSe 2 ), and molybdenum ditelluride (MoTe 2 ).

4. The electronic device of claim 1 , wherein each of the plurality of unit films is a two-dimensional nanosheet.

5. The electronic device of claim 1 , wherein the channel spaces extend from an interface between the base element and the channel layer to an interface between the metal ion conduction layer and the channel layer.

6. The electronic device of claim 1 , wherein each of the channel spaces is between 1 Å to 10 Å.

7. The electronic device of claim 1 , wherein the channel layer and the metal ion conduction layer are configured to exchange metal ions with each other.

8. The electronic device of claim 7 , wherein the channel layer has different crystal structures depending on the metal ions accommodated in the channel spaces.

9. The electronic device of claim 7 , wherein the channel layer is configured to have an electrical resistance that decreases as the metal ions accommodated in the channel spaces increase.

10. The electronic device of claim 1 , wherein the metal ion conduction layer comprises a solid electrolyte that accommodates metal ions.

11. The electronic device of claim 10 , wherein the metal ions comprise at least one selected from the group consisting of a lithium ion, a sodium ion, and a potassium ion.

12. The electronic device of claim 1 , further comprising a metal ion source layer disposed between the metal ion conduction layer and the gate electrode layer.

13. The electronic device of claim 12 , wherein the metal ion source layer comprises conductive metal oxide that provides at least one of a lithium ion, a sodium ion, and a potassium ion.

14. The electronic device of claim 1 , wherein the channel layer stores a signal information as an electrical resistance that changes according to a concentration of the metal ions.

15. A method of manufacturing an electronic device, the method comprising:
providing a base element;
forming a source electrode layer and a drain electrode layer disposed to be spaced apart from each other on the base element;
forming a metal seed layer on the base element layer;
forming a channel layer comprising metal chalcogenide by reacting the metal seed layer with a chalcogen material, the channel layer comprising a plurality of unit films disposed to be parallel to a direction substantially perpendicular to a surface of the base element;
forming a metal ion conduction layer on the channel layer; and
forming a gate electrode layer on the metal ion conduction layer.

16. The method of claim 15 , wherein the metal seed layer comprises one selected from the group consisting of molybdenum (Mo), tungsten (W), titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), technetium (Tc), rhenium (Re), iridium (Ir), nickel (Ni), palladium (Pd), and platinum (Pt).

17. The method of claim 15 , wherein forming the channel layer comprises:
providing vapor of one of sulfur (S), selenium (Se), tellurium (Te) to the metal seed layer; and
reacting the vapor of the one of sulfur (S), selenium (Se), tellurium (Te) with the metal seed layer to grow the plurality of unit films on the base element.

18. The method of claim 15 , wherein forming the channel layer comprises growing a plurality of two-dimensional nanosheets extending in a direction substantially perpendicular to the surface of the base element.

19. The method of claim 15 ,
wherein the metal ion conduction layer comprises a solid electrolyte that accommodates metal ions, and
wherein the metal ions comprise one selected from the group consisting of a lithium ion, a sodium ion, and a potassium ion.

20. The method of claim 15 , further comprising forming a metal ion source layer disposed between the metal ion conduction layer and the gate electrode layer,
wherein the metal ion source layer comprises conductive metal oxide including at least one of a lithium ion, a sodium ion, and a potassium ion.

Assignees

• Sk Hynix Inc

Inventors

• Koo Won Tae
• Han Jae Hyun

Classifications

• H10N70/8828

  Tellurides, e.g. GeSbTe · CPC title

• H10N70/8825

  Selenides, e.g. GeSe · CPC title

• H10N70/8822

  Sulfides, e.g. CuS · CPC title

• H10N70/245

  the species being metal cations, e.g. programmable metallization cells · CPC title

• H10N70/023 Primary

  by chemical vapor deposition, e.g. MOCVD, ALD · CPC title