Thermal radiation sensor comprising an ionic conductor

Patent metadata

Field	Value
Publication number	US-12207552-B2
Application number	US-202217675219-A
Country	US
Kind code	B2
Filing date	Feb 18, 2022
Priority date	Feb 26, 2021
Publication date	Jan 21, 2025
Grant date	Jan 21, 2025

Abstract

One or more devices, systems, apparatuses, methods of manufacture and/or methods of use to facilitate thermal sensing in a field related to thermal radiation are envisioned. In one embodiment, an ionic thermoelectric thermal radiation sensor, comprises a substrate, an ionic thermoelectric sensing unit arranged on the substrate and comprising ionically conductive and electrically insulating material, wherein the ionic thermoelectric sensing unit is a voltage-producing unit having first and second surfaces spaced apart from and disposed opposite to one other, wherein the ionic thermoelectric sensing unit produces voltage via thermal diffusion of ions or via the Soret effect under a temperature difference between the first and second surfaces, a thermal radiation absorber that generates heat when exposed to thermal radiation, and one or more electrical connectors that connect the first and second surface.

First claim

What is claimed is:

1. An ionic thermoelectric thermal radiation sensor, comprising:
a substrate;
an ionic thermoelectric sensing unit arranged on the substrate and comprising ionically conductive and electrically insulating material, wherein the ionic thermoelectric sensing unit is a voltage-producing unit having a first surface and a second surface spaced apart from and disposed opposite to one another, wherein the ionic thermoelectric sensing unit is configured to produce voltage via thermal diffusion of ions or via the Soret effect under a temperature difference between the first and second surfaces,
wherein the ionic thermoelectric sensing unit comprises a pair of elements spaced apart from one another along the substrate, and
wherein the pair of elements comprises a first element comprising a negative type thermoelectric material and a second element comprising a positive type thermoelectric material;
a thermal radiation absorber applied to at least one element of the pair of elements of the ionic thermoelectric sensing unit, wherein the thermal radiation absorber is configured to generate heat when exposed to thermal radiation, including infrared radiation;
a first electrical connector that connects respective first surface portions of a first surface of the pair of elements and a second electrical connector that connects respective second surface portions of a second surface of the pair of elements,
wherein the first electrical connector is disposed between the respective first surface portions and the thermal radiation absorber, and
wherein the thermal radiation absorber and the substrate are spaced apart from one another by the pair of elements; and
a support positioned to support the first electrical connector opposite the substrate,
wherein the support extends between the pair of elements and between the first electrical connector and the substrate, and
wherein the support is comprised of the negative type thermoelectric material or the support is comprised of the positive type thermoelectric material.

2. The ionic thermoelectric thermal radiation sensor of claim 1 ,
wherein the ionic sensing unit comprises polymer-based solid or gel electrolytes.

3. The ionic thermoelectric thermal radiation sensor of claim 1 , wherein the first and second electrical connectors comprise electrically conductive materials comprising at least one of a metal, a semiconductor, a conductive polymer or a conductive ceramic.

4. The ionic thermoelectric thermal radiation sensor of claim 1 , disposed in an array of spaced apart ionic thermoelectric thermal radiation sensors, including the ionic thermoelectric thermal radiation sensor, wherein the spaced apart ionic thermoelectric thermal radiation sensors of the array are arranged in spaced apart rows along a base of the array.

5. The ionic thermoelectric thermal radiation sensor of claim 1 , further comprising:
one or more additional ionic thermoelectric sensing units arranged on the substrate and connected to the ionic thermoelectric sensing unit via the first electrical connector, the second electrical connector or an additional electrical connector,
wherein the one or more additional ionic thermoelectric sensing units are configured to produce voltage via at least one of thermal diffusion of ions or the Soret effect under a temperature difference between surfaces of the one or more additional ionic thermoelectric sensing units, and
wherein the ionic thermoelectric sensing unit and the one or more additional ionic thermoelectric sensing units comprise a plurality of ionic thermoelectric sensing units of the ionic thermoelectric thermal radiation sensor.

6. The ionic thermoelectric thermal radiation sensor of claim 5 ,
wherein the first and second electrical connectors comprise electrically conductive materials comprising at least one of a metal, a semiconductor, a conductive polymer or a conductive ceramic, and
wherein at least one of the ionic thermoelectric sensing units of the plurality of ionic thermoelectric sensing units comprises a film comprising ionically conductive polymer-based solid or gel electrolytes.

7. The ionic thermoelectric thermal radiation sensor of claim 5 , wherein each of the ionic thermoelectric sensing units of the plurality of ionic thermoelectric sensing units comprise N-type and P-type materials, comprising the negative type thermoelectric material and the positive type thermoelectric material, electrically connected in series via the first and second electrical connectors to enhance output signal strength.

8. The ionic thermoelectric thermal radiation sensor of claim 5 , wherein the ionic thermoelectric sensing units of the plurality of ionic thermoelectric sensing units have individual widths along the substrate in a range from 0.1 μm to 1000 μm.

9. The ionic thermoelectric thermal radiation sensor of claim 5 ,
wherein the ionic thermoelectric sensing units of the plurality of ionic thermoelectric sensing units extend from the substrate in a common direction along a central longitudinal axis of the ionic thermoelectric thermal radiation sensor, and
wherein at least a first portion of one ionic thermoelectric sensing unit of the plurality of ionic thermoelectric sensing units, along the central longitudinal axis, is spaced along the substrate from at least a second portion of another ionic thermoelectric sensing unit of the plurality of ionic thermoelectric sensing units, along the central longitudinal axis.

10. The ionic thermoelectric thermal radiation sensor of claim 1 , wherein the elements of the pair of elements each have a Seebeck coefficient that is greater than 1 mV/K.

11. The ionic thermoelectric thermal radiation sensor of claim 1 , wherein the support extends from the second electrical connector to the first electrical connector.

12. An ionic thermoelectric thermal radiation sensor array, comprising:
a substrate;
ionic thermoelectric sensing units arranged on the substrate and comprising ionically conductive and electrically insulating material, wherein the ionic thermoelectric sensing units are voltage-producing units each having first and second surfaces spaced apart from and disposed opposite to one another,
wherein each of the ionic thermoelectric sensing units comprises a pair of elements spaced apart from one another along the substrate by a support, and
wherein each pair of elements comprises a first element comprising a negative type thermoelectric material and a second element comprising a positive type thermoelectric material;
a thermal radiation absorber applied to at least one element of the pair of elements of the ionic thermoelectric sensing unit, wherein the thermal radiation absorber is configured to generate heat when exposed to thermal radiation, including infrared radiation;
first and second electrical connectors that connect the first and second surfaces in series, in parallel or both,
wherein pairs of the spaced apart elements comprise respective passivity sensors that generate respective voltages due to respective thermal diffusions of ions or due to the Soret effect under respective temperature differences between the first and second surfaces,
wherein the first electrical connector is disposed between respective first surface portions of a first surface of the pair of elements and the thermal radiation absorber,
wherein the thermal radiation absorber and the substrate are spaced apart from one another by the pair of elements, and
wherein the support extends between the first and second electrical connectors, and
wherein the support is comprised of the negative type thermoelectric material or the support is comprised of the positive type therm

Assignees

• Univ Hong Kong Science & Tech

Inventors

• Huang Baoling
• Chi Cheng
• Liu Gongze

Classifications

• H10N10/01

  Manufacture or treatment · CPC title

• H10N10/17 Primary

  characterised by the structure or configuration of the cell or thermocouple forming the device · CPC title

• H10N10/13

  characterised by the heat-exchanging means at the junction · CPC title

• H10N15/00

  Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect (integrated devices or assemblies of multiple devices H10N19/00) · CPC title

• H10N10/10

  operating with only the Peltier or Seebeck effects · CPC title