Resistance random access memory device and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-12201042-B2
Application number	US-202117527648-A
Country	US
Kind code	B2
Filing date	Nov 16, 2021
Priority date	Nov 16, 2020
Publication date	Jan 14, 2025
Grant date	Jan 14, 2025

Abstract

A resistance random access memory device includes a resistance change layer, including an organometallic halide having perovskite grains, disposed on a first electrode; and a second electrode disposed on the resistance change layer. A boundary between the perovskite grains comprises an amorphous metal oxide.

First claim

What is claimed is:

1. A resistance random access memory device comprising:
a resistance change layer, comprising an organometallic halide having perovskite grains, disposed on a first electrode; and
a second electrode disposed on the resistance change layer,
wherein a boundary between the perovskite grains comprises an amorphous metal oxide, and
wherein halide ions do not pass between the grains due to a boundary between the grains.

2. The resistance random access memory device of claim 1 , wherein the amorphous metal oxide is one represented by Chemical Formula 1:

wherein M is Zr, Ti, Al, Si, Mg, Ca, Sr, Ba, Sc, Y, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, C, Zn, Ga, In, Ge, or Sn, and
n is 1 to 25.

3. The resistance random access memory device of claim 1 , further comprising a polymer protective layer disposed between the second electrode and the resistance change layer.

4. The resistance random access memory device of claim 3 , wherein the polymer protective layer comprises an ion conductive polymer selected from the group consisting of polymethyl methacrylate, polyethylene oxide, polypropylene oxide, polydimethylsiloxane, polyacrylonitrile, polyvinyl chloride, polyvinylidene fluoride, polyvinylidene fluoride-hexafluoropropylene, polyethyleneimine, polyphenylene terephthalamide, poly(methoxy polyethylene glycol methacrylate), poly[2-methoxy ethyl glycidyl ether], and combinations thereof.

5. The resistance random access memory device of claim 1 , wherein the organometallic halide is one represented by Chemical Formula 2 or Chemical Formula 3:
RMX 3 ,  [Chemical Formula 2]

wherein R is a substituted or unsubstituted C 1 -C 24 alkyl group, and when R is substituted, the substituent is an amino group, a hydroxyl group, a cyano group, a halogen group, a nitro group, or a methoxy group,
M comprises a metal cation selected from the group consisting of Pb, Sn, Ge, Cu, Ni, Co, Fe, Mn, Cr, Pd, Cd, Yb, and combinations thereof, and
X comprises a halide anion;
R 2 MX 4 ,  [Chemical Formula 3]

wherein R is a substituted or unsubstituted C 1 -C 24 alkyl group, and when R is substituted, the substituent is an amino group, a hydroxyl group, a cyano group, a halogen group, a nitro group, or a methoxy group,
M comprises a metal cation selected from the group consisting of Pb, Sn, Ge, Cu, Ni, Co, Fe, Mn, Cr, Pd, Cd, Yb, and combinations thereof, and
X comprises a halide anion.

6. The resistance random access memory device of claim 1 , wherein each of the first electrode and the second electrode comprises a material selected from the group consisting of a metal, a conductive polymer, a carbon material, and combinations thereof.

7. The resistance random access memory device of claim 1 , wherein the first electrode and the second electrode comprise same or different electrode materials.

8. A method for manufacturing a resistance random access memory device, the method comprising:
forming a first electrode on a substrate;
forming a resistance change layer, comprising an organometallic halide having a perovskite grain boundary, on the first electrode;
forming a second electrode on the resistance change layer; and
forming a polymer protective layer on the resistance change layer before forming the second electrode.

9. The method of claim 8 , wherein the forming of the resistance change layer comprises coating a solution in which a metal alkoxide and an organometallic halide having a perovskite crystal structure are dissolved in a solvent on the first electrode.

10. The method of claim 9 , wherein the metal alkoxide is one represented Chemical Formula 4:
M-(OR′) m ,  [Chemical Formula 4]

wherein M is Zr, Ti, Al, Si, Mg, Ca, Sr, Ba, Sc, Y, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, C, Zn, Ga, In, Ge, or Sn,
m is a valence of M, and
R′ is hydrogen, or a linear or branched C 1 -C 7 alkyl group.

11. The method of claim 9 , wherein the solvent is one selected from the group consisting of dimethylformamide, dimethylsulfoxide, dimethylacetamide, N-methylpyrrolidone, N-methyl-2-pyridine, pyridine, aniline, and combinations thereof.

12. The method of claim 9 , wherein the organometallic halide having the perovskite crystal structure is one represented by the following Chemical Formula 5 or Chemical Formula 6:
RMX 3 ,  [Chemical Formula 5]

wherein R is a substituted or unsubstituted C 1 -C 24 alkyl group, and when R is substituted, the substituent is an amino group, a hydroxyl group, a cyano group, a halogen group, a nitro group, or a methoxy group,
M comprises a metal cation selected from the group consisting of Pb, Sn, Ge, Cu, Ni, Co, Fe, Mn, Cr, Pd, Cd, Yb, and combinations thereof, and
X comprises a halide anion;
R 2 MX 4 ,  [Chemical Formula 6]

wherein R is a substituted or unsubstituted C 1 -C 24 alkyl group, and when R is substituted, the substituent is an amino group, a hydroxyl group, a cyano group, a halogen group, a nitro group, or a methoxy group,
M comprises a metal cation selected from the group consisting of Pb, Sn, Ge, Cu, Ni, Co, Fe, Mn, Cr, Pd, Cd, Yb, and combinations thereof, and
X comprises a halide anion.

13. A memristor comprises the resistance random access memory device of claim 1 .

14. A resistance random access memory device comprising:
a resistance change layer, comprising an organometallic halide having perovskite grains, disposed on a first electrode;
a second electrode disposed on the resistance change layer; and
a polymer protective layer disposed between the second electrode and the resistance change layer,
wherein a boundary between the perovskite grains comprises an amorphous metal oxide.

15. The resistance random access memory device of claim 14 , wherein the amorphous metal oxide is one represented by Chemical Formula 1:
O-M-O n ,  [Chemical Formula 1]

wherein M is Zr, Ti, Al, Si, Mg, Ca, Sr, Ba, Sc, Y, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, C, Zn, Ga, In, Ge, or Sn, and
n is 1 to 25.

16. The resistance random access memory device of claim 14 , wherein the polymer protective layer comprises an ion conductive polymer selected from the group consisting of polymethyl methacrylate, polyethylene oxide, polypropylene oxide, polydimethylsiloxane, polyacrylonitrile, polyvinyl chloride, polyvinylidene fluoride, polyvinylidene fluoride-hexafluoropropylene, polyethyleneimine, polyphenylene terephthalamide, poly(methoxy polyethylene glycol methacrylate), poly[2-methoxy ethyl glycidyl ether], and combinations thereof.

17. The resistance random access memory device of claim 14 , wherein the organometallic halide is one represented by Chemical Formula 2 or Chemical Formula 3:
RMX 3 ,  [Chemical Formula 2]

wherein R is a substituted or unsubstituted C 1 -C 24 alkyl group, and when R is substituted, the substituent is an amino group, a hydroxyl group, a cyano group, a halogen group, a nitro group, or a methoxy group,
M comprises a metal cation selected from the group consisting of Pb, Sn, Ge, Cu, Ni, Co, Fe, Mn, Cr, Pd, Cd, Yb, and combinations thereof, and
X comprises a halide anion;
R 2 MX 4 ,  [Chemical Formula 3]

wherein R is a substituted or unsubstituted C 1 -C 24 alkyl group, and when R is substituted, the substituent is an amino group, a hydroxyl group, a cyano group, a halogen group, a nitro group, or a methoxy group,
M comprises a metal cation selected from the group consisting of Pb, Sn,

Assignees

• Research & Business Found Sungkyunkwan Univ

Inventors

• Jung Hyun Suk
• Lee Sangmyeong
• Kim Won Bin
• Lee Jae Myeong
• Gong Oh Yeong
• Kim Jun Young
• Choi Jin Hyuk
• Sohn Changhwun

Classifications

• H10N70/841

  Electrodes · CPC title

• H10N70/8833

  Binary metal oxides, e.g. TaOx · CPC title

• H10N70/021

  Formation of switching materials, e.g. deposition of layers · CPC title

• H10B63/20

  comprising selection components having two electrodes, e.g. diodes · CPC title

• H10N70/8836 Primary

  Complex metal oxides, e.g. perovskites, spinels · CPC title