Physical vapor deposition of piezoelectric films

Patent metadata

Field	Value
Publication number	US-12201025-B2
Application number	US-202217967556-A
Country	US
Kind code	B2
Filing date	Oct 17, 2022
Priority date	Nov 12, 2019
Publication date	Jan 14, 2025
Grant date	Jan 14, 2025

Abstract

A physical vapor deposition system includes a deposition chamber, a support to hold a substrate in the deposition chamber, a target in the chamber, a power supply configured to apply power to the target to generate a plasma in the chamber to sputter material from the target onto the substrate to form a piezoelectric layer on the substrate, and a controller configured to cause the power supply to alternate between deposition phases in which the power supply applies power to the target and cooling phases in which power supply does not apply power to the target. Each deposition phase lasts at least 30 seconds and each cooling phase lasts at least 30 seconds.

First claim

What is claimed is:

1. A physical vapor deposition system, comprising:
a deposition chamber;
a support to hold a substrate in the deposition chamber;
a target in the deposition chamber formed of a material to be sputtered to deposit piezoelectric material;
a power supply configured to apply power to the target to generate a plasma in the deposition chamber to sputter the material from the target onto the substrate to form a piezoelectric layer on the substrate; and
a controller configured to cause the power supply to alternate between deposition phases in which the power supply applies power to the target and cooling phases in which power supply does not apply power to the target, each deposition phase lasting at least 30 seconds and each cooling phase lasting at least 30 seconds.

2. The system of claim 1 , wherein the controller is configured to cause the cooling phases to be longer than the deposition phases.

3. The system of claim 1 , wherein the controller is configured to cause each deposition phase to last at most ten minutes.

4. The system of claim 3 , wherein the controller is configured to cause each deposition phase to last three to five minutes.

5. The system of claim 1 , wherein the controller is configured to cause each cooling phase to last at most ten minutes.

6. The system of claim 5 , wherein the controller is configured to cause each cooling phase to last five to seven minutes.

7. The system of claim 1 , wherein the target comprises niobate-lead titanate or lead zirconate titanate.

8. A physical vapor deposition system, comprising:
a deposition chamber having a ceiling to support a target formed of a material to be sputtered to deposit piezoelectric material;
a support to hold a substrate in the deposition chamber;
a power supply configured to apply power to the target to generate a plasma in the deposition chamber to sputter the material from the target onto the substrate to form a piezoelectric layer on the substrate; and
a controller configured to cause the power supply to alternate between deposition phases in which the power supply applies power to the target and cooling phases in which power supply does not apply power to the target, each deposition phase lasting at least 30 seconds and each cooling phase lasting at least 30 seconds.

9. The system of claim 8 , wherein the controller is configured to cause the power supply to apply power during the deposition phases to the target at a power less than 1.5 W/cm 2 of the target.

10. The system of claim 9 , wherein the controller is configured to cause the power supply to apply power during the deposition phases to the target at a power less than 1.2 W/cm 2 of the target.

11. The system of claim 8 , comprising a chiller in the support, and wherein the controller is configured to operate the chiller to maintain a temperature of the substrate no higher than 400° C. during the deposition phases.

12. The system of claim 8 , further comprising a pump to control a chamber pressure in the deposition chamber and a gas source coupled to the deposition chamber to introduce an inert gas or a mixture of an inert gas and a processing gas into the deposition chamber.

13. The system of claim 12 , wherein the controller is configured to cause the power supply to apply power and the gas source to introduce a gas and the pump to control the chamber pressure such that material is sputtered from the target onto the substrate to form the piezoelectric layer in an amorphous or a quasi-crystalline phase.

14. The system of claim 8 , wherein the controller is configured to cause the cooling phases to be longer than the deposition phases.

15. The system of claim 8 , wherein the controller is configured to cause each deposition phase to last at most ten minutes.

16. The system of claim 15 , wherein the controller is configured to cause each deposition phase to last three to five minutes.

17. The system of claim 8 , wherein the controller is configured to cause each cooling phase to last at most ten minutes.

18. The system of claim 17 , wherein the controller is configured to cause each cooling phase to last five to seven minutes.

Assignees

• Applied Materials Inc

Inventors

• Sangle Abhijeet Laxman
• Sharma Vijay Bhan
• Kadam Ankur
• Ramakrishnan Bharatwaj
• Sivaramakrishnan Visweswaren
• Xue Yuan

Classifications

• H10N30/708

  Intermediate layers, e.g. barrier, adhesion or growth control buffer layers · CPC title

• C23C14/3492

  Variation of parameters during sputtering · CPC title

• H10N30/8548

  Lead-based oxides · CPC title

• H10N30/877

  Conductive materials · CPC title

• H10N30/076

  by vapour phase deposition · CPC title