Crystal pulling systems having a cover member for covering the silicon charge and methods for growing a melt of silicon in a crucible assembly

Patent metadata

Field	Value
Publication number	US-12195873-B2
Application number	US-202117396370-A
Country	US
Kind code	B2
Filing date	Aug 6, 2021
Priority date	Sep 1, 2020
Publication date	Jan 14, 2025
Grant date	Jan 14, 2025

Abstract

Crystal pulling system having a housing and a crucible assembly are disclosed. The system includes a heat shield that defines a central passage through which an ingot passes during ingot growth. A cover member is moveable within the heat shield along a pull axis. The cover member may include an insulation layer. The cover member covers at least a portion of the charge during meltdown.

First claim

What is claimed is:

1. A crystal pulling system for growing a monocrystalline ingot from a silicon melt, the system having a pull axis and comprising:
a housing defining a growth chamber;
a crucible assembly disposed within the growth chamber for containing the silicon melt, the crucible assembly comprising a bottom and an outer sidewall that extends from the bottom;
a heat shield that defines a central passage through which the monocrystalline ingot passes during ingot growth; and
a cover member that is moveable within the heat shield along the pull axis, the cover member comprising:
a first plate having a first plate axis that is parallel to the pull axis, the first plate comprising a hub, the hub having a hub opening;
a second plate having a second plate axis that is parallel to the pull axis, the second plate being disposed above the first plate;
one or more insulation layers disposed between the first plate and the second plate, the one or more insulation layers being made of felt, wherein the felt contacts the first plate and the felt contacts the second plate; and
a shaft having an elongated portion and a collar, the collar being connected to and extending radially outward from the elongated portion, the shaft extending through the hub opening, the first plate resting on the collar.

2. The crystal pulling system as set forth in claim 1 wherein the first and second plates are both made of graphite.

3. The crystal pulling system as set forth in claim 2 wherein the first and second plates are silicon carbide coated.

4. The crystal pulling system as set forth in claim 1 wherein the heat shield has a bottom, the central passage of the heat shield having a diameter at the bottom of the heat shield, the cover member having a diameter, wherein the diameter of the cover member is at least 0.75 times the diameter of the central passage at the bottom of the heat shield.

5. The crystal pulling system as set forth in claim 1 wherein the crystal pulling system comprises a pulling mechanism comprising a chuck, the pulling mechanism capable of raising and lowering a chuck along the pull axis, the cover member being removably connectable to the chuck.

6. The crystal pulling system as set forth in claim 5 wherein the chuck is connectable to a seed crystal for initiating ingot growth.

7. The crystal pulling system as set forth in claim 1 wherein the crucible assembly comprises an inner weir that extends upward from the bottom.

8. The crystal pulling system as set forth in claim 7 wherein the crucible assembly comprises a central weir disposed between the outer sidewall and inner weir.

9. The crystal pulling system as set forth in claim 8 wherein the crucible assembly comprises three nested crucibles having separate bottoms which together form a bottom of the crucible assembly.

10. The crystal pulling system as set forth in claim 1 wherein the felt is composed of natural fibers.

11. The crystal pulling system as set forth in claim 1 wherein the felt is composed of synthetic fibers.

12. The crystal pulling system as set forth in claim 1 wherein the felt has an ash content of no more than 30 ppm.

Assignees

• Globalwafers Co Ltd

Inventors

• Tosi Paolo
• Pannocchia Matteo
• Scala Roberto

Classifications

• Y10T117/1068

  including heating or cooling details [e.g., shield configuration] · CPC title

• Y10T117/1052

  including a sectioned crucible [e.g., double crucible, baffle] · CPC title

• C30B29/06 Primary

  Silicon · CPC title

• C30B15/14

  Heating of the melt or the crystallised materials · CPC title

• C30B15/12

  Double crucible methods · CPC title