Computational metrology

US12189302B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12189302-B2
Application numberUS-202217738093-A
CountryUS
Kind codeB2
Filing dateMay 6, 2022
Priority dateFeb 22, 2017
Publication dateJan 7, 2025
Grant dateJan 7, 2025

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.

First claim

Opening claim text (preview).

What is claimed is: 1. A method comprising: obtaining an underlying contribution of a lithographic apparatus to overlay as part of a patterning process; and combining, by a hardware computer, the underlying contribution with a further contribution to overlay of a substrate to obtain an estimate of overlay for the substrate. 2. The method of claim 1 , wherein the further contribution comprises a contribution of a substrate surface height of the substrate to overlay. 3. The method of claim 1 , wherein the further contribution comprises a contribution of a substrate servo error of the substrate to overlay. 4. The method of claim 1 , wherein the further contribution comprises a contribution of an alignment and/or projection system model residual. 5. The method of claim 1 , further comprising combining, with the underlying contribution and the contribution of the substrate surface height, a contribution of an etch process to overlay of the substrate. 6. The method of claim 5 , wherein the etch process contribution is specific to the patterning process but not specific to any particular substrate processed using the patterning process. 7. The method of claim 1 , wherein the underlying contribution is specific to a particular patterning process but not specific to any particular substrate processed using the patterning process. 8. The method of claim 1 , wherein the obtaining the underlying contribution further comprises obtaining measured overlay data and removing therefrom a contribution of a particular component of the lithographic apparatus to overlay. 9. The method of claim 8 , wherein the contribution of the particular component comprises one or more selected from: a contribution of a servo error, a contribution of alignment model residual, a contribution of a projection system aberration, a contribution of a projection system model residual, and/or a contribution of a substrate surface height. 10. The method of claim 1 , wherein the contribution comprises a spatial substrate fingerprint. 11. The method of claim 1 , further comprising using the estimate to perform any one or more selected from: predict a defect for the substrate, control the patterning process, monitor the patterning process, design an aspect of the patterning process, and/or calibrate a mathematical model. 12. A computer program product comprising a non-transitory computer readable medium having instructions therein, the instructions, when executed by a computer system, configured to cause the computer system to perform the method of claim 1 . 13. A method comprising: obtaining an alignment data distribution across at least part of a substrate processed using a patterning process, based on measured alignment data; and combining, by a hardware computer, the alignment data distribution with an alignment fingerprint attributable to a processing parameter other than measured alignment to obtain an estimate of alignment data for the substrate. 14. The method of claim 13 , wherein the alignment fingerprint comprises a contribution of a substrate height or unflatness of the substrate to alignment. 15. The method of claim 13 , wherein the alignment fingerprint comprises a contribution of a process effect, due to a part of the patterning process other than a lithography pattern transfer, of the substrate to alignment. 16. The method of claim 13 , wherein the alignment fingerprint comprises a contribution of heating of the substrate to alignment. 17. The method of claim 13 , wherein the alignment fingerprint is specific to the patterning process but not specific to any particular substrate processed using the patterning process. 18. The method of claim 13 , wherein the alignment fingerprint is specific to a particular substrate processed using the patterning process but not generic to other substrates processed using the patterning process. 19. The method of claim 13 , wherein the alignment fingerprint is derived from a measurement of the processing parameter. 20. The method of claim 13 , wherein the alignment fingerprint comprises a spatial substrate fingerprint. 21. The method of claim 13 , further comprising using the estimate to perform any one or more selected from: predict a defect for the substrate, control the patterning process, monitor the patterning process, design an aspect of the patterning process, and/or calibrate a mathematical model. 22. A computer program product comprising a non-transitory computer readable medium having instructions therein, the instructions, when executed by a computer system, configured to cause the computer system to perform the method of claim 13 .

Assignees

Inventors

Classifications

  • Yield analysis or yield optimisation · CPC title

  • Manufacturability analysis or optimisation for manufacturability · CPC title

  • Design optimisation, verification or simulation (optimisation, verification or simulation of circuit designs G06F30/30) · CPC title

  • Neural networks · CPC title

  • Mark designs · CPC title

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Frequently asked questions

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What does patent US12189302B2 cover?
A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing …
Who is the assignee on this patent?
Asml Netherlands Bv
What technology area does this patent fall under?
Primary CPC classification G03F7/70625. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jan 07 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).