Lithographic Method to Apply a Pattern to a Substrate and Lithographic Apparatus
US-2016357115-A1 · Dec 8, 2016 · US
US12189302B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12189302-B2 |
| Application number | US-202217738093-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 6, 2022 |
| Priority date | Feb 22, 2017 |
| Publication date | Jan 7, 2025 |
| Grant date | Jan 7, 2025 |
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A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.
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What is claimed is: 1. A method comprising: obtaining an underlying contribution of a lithographic apparatus to overlay as part of a patterning process; and combining, by a hardware computer, the underlying contribution with a further contribution to overlay of a substrate to obtain an estimate of overlay for the substrate. 2. The method of claim 1 , wherein the further contribution comprises a contribution of a substrate surface height of the substrate to overlay. 3. The method of claim 1 , wherein the further contribution comprises a contribution of a substrate servo error of the substrate to overlay. 4. The method of claim 1 , wherein the further contribution comprises a contribution of an alignment and/or projection system model residual. 5. The method of claim 1 , further comprising combining, with the underlying contribution and the contribution of the substrate surface height, a contribution of an etch process to overlay of the substrate. 6. The method of claim 5 , wherein the etch process contribution is specific to the patterning process but not specific to any particular substrate processed using the patterning process. 7. The method of claim 1 , wherein the underlying contribution is specific to a particular patterning process but not specific to any particular substrate processed using the patterning process. 8. The method of claim 1 , wherein the obtaining the underlying contribution further comprises obtaining measured overlay data and removing therefrom a contribution of a particular component of the lithographic apparatus to overlay. 9. The method of claim 8 , wherein the contribution of the particular component comprises one or more selected from: a contribution of a servo error, a contribution of alignment model residual, a contribution of a projection system aberration, a contribution of a projection system model residual, and/or a contribution of a substrate surface height. 10. The method of claim 1 , wherein the contribution comprises a spatial substrate fingerprint. 11. The method of claim 1 , further comprising using the estimate to perform any one or more selected from: predict a defect for the substrate, control the patterning process, monitor the patterning process, design an aspect of the patterning process, and/or calibrate a mathematical model. 12. A computer program product comprising a non-transitory computer readable medium having instructions therein, the instructions, when executed by a computer system, configured to cause the computer system to perform the method of claim 1 . 13. A method comprising: obtaining an alignment data distribution across at least part of a substrate processed using a patterning process, based on measured alignment data; and combining, by a hardware computer, the alignment data distribution with an alignment fingerprint attributable to a processing parameter other than measured alignment to obtain an estimate of alignment data for the substrate. 14. The method of claim 13 , wherein the alignment fingerprint comprises a contribution of a substrate height or unflatness of the substrate to alignment. 15. The method of claim 13 , wherein the alignment fingerprint comprises a contribution of a process effect, due to a part of the patterning process other than a lithography pattern transfer, of the substrate to alignment. 16. The method of claim 13 , wherein the alignment fingerprint comprises a contribution of heating of the substrate to alignment. 17. The method of claim 13 , wherein the alignment fingerprint is specific to the patterning process but not specific to any particular substrate processed using the patterning process. 18. The method of claim 13 , wherein the alignment fingerprint is specific to a particular substrate processed using the patterning process but not generic to other substrates processed using the patterning process. 19. The method of claim 13 , wherein the alignment fingerprint is derived from a measurement of the processing parameter. 20. The method of claim 13 , wherein the alignment fingerprint comprises a spatial substrate fingerprint. 21. The method of claim 13 , further comprising using the estimate to perform any one or more selected from: predict a defect for the substrate, control the patterning process, monitor the patterning process, design an aspect of the patterning process, and/or calibrate a mathematical model. 22. A computer program product comprising a non-transitory computer readable medium having instructions therein, the instructions, when executed by a computer system, configured to cause the computer system to perform the method of claim 13 .
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