Ga2O3-BASED SINGLE CRYSTAL SUBSTRATE
US-2015380500-A1 · Dec 31, 2015 · US
Method for producing gallium precursor and method for producing laminated body using the same
US12180585B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12180585-B2 |
| Application number | US-202017766467-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 15, 2020 |
| Priority date | Oct 24, 2019 |
| Publication date | Dec 31, 2024 |
| Grant date | Dec 31, 2024 |
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Abstract
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A method for producing a gallium precursor, including, a step of preparing a solvent comprising an aqueous solution containing an acid and/or an alkali, a step of immersing gallium in the solvent, a step of making the gallium immersed in the solvent fine, and a step of dissolving the fined gallium. This provides a method for producing a gallium precursor with high quality and highly productive.
First claim
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The invention claimed is: 1. A method for producing a gallium precursor comprising: a step of preparing a solvent consisting of water and an alkali, a step of immersing gallium in the solvent, a step of making the gallium immersed in the solvent fine, and a step of dissolving the fine gallium. 2. The method for producing a gallium precursor according to claim 1 , wherein the step of making the gallium fine is to make the gallium fine by ultrasonic vibration. 3. The method for producing a gallium precursor according to claim 2 , further comprising liquefying the gallium before the step of making the gallium fine. 4. The method for producing a gallium precursor according to claim 3 , wherein the temperature of the solvent is kept at 30° C. or higher and lower than 100° C. in the step of dissolving the gallium. 5. The method for producing a gallium precursor according to claim 3 , wherein ammonia is used as the alkali. 6. The method for producing a gallium precursor according to claim 2 , wherein the temperature of the solvent is kept at 30° C. or higher and lower than 100° C. in the step of dissolving the gallium. 7. The method for producing a gallium precursor according to claim 2 , wherein ammonia is used as the alkali. 8. The method for producing a gallium precursor according to claim 1 , further comprising liquefying the gallium before the step of making the gallium fine. 9. The method for producing a gallium precursor according to claim 8 , wherein the temperature of the solvent is kept at 30° C. or higher and lower than 100° C. in the step of dissolving the gallium. 10. The method for producing a gallium precursor according to claim 8 , wherein ammonia is used as the alkali. 11. The method for producing a gallium precursor according to claim 1 , wherein the temperature of the solvent is kept at 30° C. or higher and lower than 100° C. in the step of dissolving the gallium. 12. The method for producing a gallium precursor according to claim 1 , wherein ammonia is used as the alkali. 13. A method for producing a laminated body containing a film containing gallium comprising: a step of heating a substrate, a step of further diluting the gallium precursor prepared by the method according to claim 8 with water to prepare a gallium precursor solution, a step of atomizing the gallium precursor solution, a step of supplying the atomized gallium precursor solution to the substrate with a carrier gas, and a step of forming a film containing gallium on the substrate by reacting the atomized gallium precursor solution on the substrate.
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Classifications
- C30B29/16Primary
Oxides · CPC title
Feed and outlet means for the gases; Modifying the flow of the reactive gases · CPC title
Oxides · CPC title
- C01G15/00Primary
Compounds of gallium, indium or thallium · CPC title
characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials · CPC title
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- What does patent US12180585B2 cover?
- A method for producing a gallium precursor, including, a step of preparing a solvent comprising an aqueous solution containing an acid and/or an alkali, a step of immersing gallium in the solvent, a step of making the gallium immersed in the solvent fine, and a step of dissolving the fined gallium. This provides a method for producing a gallium precursor with high quality and highly productive.
- Who is the assignee on this patent?
- Shinetsu Chemical Co
- What technology area does this patent fall under?
- Primary CPC classification C30B29/16. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Dec 31 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).