Localized spacer for nanowire transistors and methods of fabrication

Patent metadata

Field	Value
Publication number	US-12176408-B2
Application number	US-202017131467-A
Country	US
Kind code	B2
Filing date	Dec 22, 2020
Priority date	Dec 22, 2020
Publication date	Dec 24, 2024
Grant date	Dec 24, 2024

Abstract

A transistor includes a first channel layer over a second channel layer, an epitaxial source structure coupled to a first end of the first and second channel layers and an epitaxial drain structure coupled to a second end of the first and second channel layers. The transistor includes a gate between the epitaxial source structure and the epitaxial drain structure, where the gate is above the first channel layer and between the first channel layer and the second channel layer. The transistor includes a first spacer of a first material, between the first and second channel layers includes. The first spacer has at least one convex sidewall that is between the gate and the epitaxial source structure and between the gate and the epitaxial drain structure. The transistor also includes a second spacer of a second material having substantially vertical sidewalls above the first channel layer.

First claim

What is claimed is:

1. An apparatus, comprising:
a transistor structure of a first conductivity type, comprising:
a first channel layer over a second channel layer, wherein the first and the second channel layers comprise monocrystalline silicon;
an epitaxial source structure coupled to a first end of the first and second channel layers;
an epitaxial drain structure coupled to a second end of the first and second channel layers;
a gate between the epitaxial source structure and the epitaxial drain structure, the gate above the first channel layer and between the first and the second channel layers;
a first spacer dielectric material between the gate and each of the epitaxial source structure and the epitaxial drain structure and between the first and the second channel layers, wherein the first spacer dielectric material has a convex sidewall adjacent to the gate and a vertical sidewall adjacent to the epitaxial source and drain structures; and

a transistor structure of a second conductivity type, comprising:
a third channel layer over a fourth channel layer; and
a second spacer dielectric material between the third channel layer and the fourth channel layer, wherein the second spacer dielectric material has a convex sidewall adjacent to a second epitaxial source structure and adjacent to a second epitaxial drain structure that are coupled with the third channel layer.

2. The apparatus of claim 1 , wherein the first conductivity type is p-type and the second conductivity type is n-type.

3. The apparatus of claim 2 , further comprising a third epitaxial drain structure and a third epitaxial source structure in direct contact with the fourth channel layer and wherein the second transistor structure comprises a metal in contact with the second epitaxial source and drain structures and in contact with the third epitaxial source and drain structures.

4. The apparatus of claim 1 , wherein the first spacer dielectric material comprises silicon, oxygen and carbon, wherein the carbon to oxygen ratio is between 1:3-10:1.

5. The apparatus of claim 1 , further comprising a third spacer dielectric material above the first channel layer and above the third channel layer, wherein the third spacer dielectric material comprises silicon, carbon, oxygen and nitrogen, wherein an atomic percent of carbon is between 3-5 percent, an atomic percent of oxygen is between 25-40 percent, and an atomic percent of nitrogen is between 10-20 percent.

6. The apparatus of claim 1 , wherein the second spacer dielectric material has a convex sidewall adjacent to a second gate.

7. The apparatus of claim 1 , wherein the first spacer dielectric material has a first lateral thickness along a length of the first or the second channel layer, and wherein the second spacer dielectric material has the first lateral thickness along the length of the third or the fourth channel layer, and wherein the first lateral thickness is between 9 nm and 15 nm.

8. The apparatus of claim 1 , wherein each of the second epitaxial source structure and second epitaxial drain structure comprises silicon and carbon.

9. The apparatus of claim 1 , wherein the epitaxial source structure and epitaxial drain structure comprises Si and Ge.

10. The apparatus of claim 1 , wherein the gate comprises a gate dielectric layer and a gate electrode adjacent to the gate dielectric layer, wherein the gate dielectric layer is between the gate electrode and the first and second channel layers, wherein the gate dielectric layer is between the gate electrode and the first spacer dielectric material and wherein the gate dielectric layer is between the gate electrode and the epitaxial source structure and the epitaxial drain structure.

11. A system comprising:
a PMOS transistor structure, comprising:
a first channel layer over a second channel layer;
a first epitaxial source structure coupled to a first end of both the first and second channel layers;
a first epitaxial drain structure coupled to a second end of both the first and second channel layers;
a first gate between the first and the second channel layers;
a first spacer dielectric material adjacent to the first gate and between the first and the second channel layers, wherein the first spacer dielectric material has a convex sidewall adjacent to the first gate and a vertical sidewall adjacent to the first epitaxial source and drain structures;

an NMOS transistor structure, comprising:
a third channel layer over a fourth channel layer;
a pair of second epitaxial source structures, a first of the second epitaxial source structures coupled to a first end of the third channel layer and a second of the second epitaxial source structures coupled to a second end of the third channel layer;
a pair of second epitaxial drain structures, a first of the second epitaxial drain structures coupled to a first end of the fourth channel layer and a second of the second epitaxial drain structures coupled to a second end of the fourth channel layer;
a second gate between the third and fourth channel layers;
and
a second spacer dielectric material adjacent to the second gate and between the third and fourth channel layers, wherein the second spacer has a convex sidewall adjacent to each of the pair of second epitaxial source structures and adjacent to each of the pair of second epitaxial drain structures; and
a non-volatile memory element coupled with any of the first or second epitaxial drain structures or any of the first or second epitaxial source structures.

12. The system of claim 11 , wherein the non-volatile memory element comprises a resistive random-access memory (RRAM) device or a magnetic tunnel junction (MTJ) device, wherein the RRAM comprises a bottom electrode, a switching layer above the bottom electrode and a top electrode above the switching layer, and wherein the MTJ device comprises a fixed magnet, a tunnel barrier above the fixed magnet and a free magnet above the tunnel barrier.

13. The system of claim 11 , wherein the first spacer dielectric material comprises silicon, oxygen and carbon, wherein the carbon to oxygen ratio is between 1:3-10:1.

14. The system of claim 13 , wherein the first epitaxial source and drain structures comprise Si and Ge.

15. The system of claim 14 , wherein the pair of second epitaxial source and drain structures comprise silicon and carbon.

Assignees

• Intel Corp

Inventors

• Naskar Sudipto
• Rachmady Willy
• Li Hsin-Fen
• Parker Christopher
• Wadhwa Prashant
• Ghani Tahir
• Hasan Mohammad
• Lin Jianqiang

Classifications

• H10N70/8833

  Binary metal oxides, e.g. TaOx · CPC title

• H10N70/826

  adapted for essentially vertical current flow, e.g. sandwich or pillar type devices · CPC title

• H10N70/24

  based on migration or redistribution of ionic species, e.g. anions, vacancies · CPC title

• H10N50/10

  Magnetoresistive devices · CPC title

• H10B63/30

  comprising selection components having three or more electrodes, e.g. transistors · CPC title