Semiconductor device including current spread region

Patent metadata

Field	Value
Publication number	US-12176396-B2
Application number	US-202218076774-A
Country	US
Kind code	B2
Filing date	Dec 7, 2022
Priority date	Sep 24, 2019
Publication date	Dec 24, 2024
Grant date	Dec 24, 2024

Abstract

A semiconductor device includes a silicon carbide semiconductor body. A first shielding region of a first conductivity type is connected to a first contact at a first surface of the silicon carbide semiconductor body. A current spread region of a second conductivity type is connected to a second contact at a second surface of the silicon carbide semiconductor body. A doping concentration profile of the current spread region includes peaks along a vertical direction perpendicular to the first surface. A doping concentration of one peak or one peak-group of the peaks is at least 50% higher than a doping concentration of any other peak of the current spread region. A vertical distance between the one peak or the one peak-group of the current spread region and the first surface is larger than a second vertical distance between the first surface and a maximum doping peak of the first shielding region.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, the method comprising:
forming a current spread region of a second conductivity type, wherein
a first shielding region of a first conductivity type is electrically connected to a first contact at a first surface of a silicon carbide semiconductor body;
the current spread region is electrically connected to a second contact at a second surface of the silicon carbide semiconductor body;
the forming the current spread region comprises performing a plurality of ion implantations of dopants having different ion implantation energies;
an ion implantation of the plurality of ion implantations has a highest ion implantation energy among the plurality of ion implantations and an ion implantation dose of the ion implantation is greater than an ion implantation dose of any other ion implantation of the plurality of ion implantations; and
at least one of:
an electrode of a Schottky contact is formed over a diode region; or
the diode region is formed between the first shielding region and a second shielding region.

2. The method of claim 1 , wherein the electrode of the Schottky contact is formed over the diode region.

3. The method of claim 1 , wherein the diode region is formed between the first shielding region and the second shielding region.

4. The method of claim 1 , comprising forming a source region of the semiconductor device.

5. The method of claim 4 , wherein the source region is of the second conductivity type.

6. The method of claim 4 , comprising forming a body region of the semiconductor device.

7. The method of claim 6 , wherein the body region is between the source region and the current spread region.

8. A method of manufacturing a semiconductor device, the method comprising:
forming a current spread region of a second conductivity type, wherein
a first shielding region of the semiconductor device is of a first conductivity type, wherein the first shielding region is electrically connected, at least one of directly or via a metal different than a first contact, to the first contact at a first surface of a silicon carbide semiconductor body;
the current spread region is electrically connected to a second contact at a second surface of the silicon carbide semiconductor body;
a pn-junction is formed by (i) the first shielding region that is electrically connected, at least one of directly or via the metal, to the first contact and (ii) the current spread region;
a doping concentration profile of the current spread region comprises a plurality of peaks along a vertical direction perpendicular to the first surface, wherein a doping concentration of one peak or one peak-group of the plurality of peaks is higher than a doping concentration of any other one of the plurality of peaks of the doping concentration profile of the current spread region; and
a first vertical distance between the one peak or the one peak-group of the doping concentration profile of the current spread region and the first surface is larger than a second vertical distance between the first surface and a maximum doping peak of the first shielding region along the vertical direction.

9. The method of claim 8 , wherein the current spread region adjoins a bottom of the first shielding region.

10. The method of claim 8 , wherein the doping concentration of the one peak or the one peak-group is at least 50% higher than a doping concentration of any other one of the plurality of peaks.

11. The method of claim 8 , wherein a number of the plurality of peaks in the doping concentration profile of the current spread region ranges from 3 to 20.

12. The method of claim 8 , wherein the first vertical distance between the one peak or the one peak-group of the doping concentration profile of the current spread region and the first surface is larger than a vertical distance between any other one of the plurality of peaks of the doping concentration profile of the current spread region and the first surface.

13. The method of claim 8 , comprising forming a source region of the semiconductor device.

14. The method of claim 13 , comprising forming a body region of the semiconductor device.

15. The method of claim 14 , wherein the body region is between the source region and the current spread region.

16. A method of manufacturing a semiconductor device, the method comprising:
forming a current spread region of a second conductivity type, wherein
a first shielding region of the semiconductor device is of a first conductivity type, wherein the first shielding region is electrically connected, at least one of directly or via a metal different than a first contact, to the first contact at a first surface of a silicon carbide semiconductor body;
the current spread region is electrically connected to a second contact at a second surface of the silicon carbide semiconductor body;
the current spread region adjoins a bottom of the first shielding region;
a pn-junction is formed by (i) the first shielding region that is electrically connected, at least one of directly or via the metal, to the first contact and (ii) the current spread region;
a doping concentration profile of the current spread region comprises a plurality of peaks along a vertical direction perpendicular to the first surface, wherein a doping concentration of one peak or one peak-group of the plurality of peaks is higher than a doping concentration of any other one of the plurality of peaks of the doping concentration profile of the current spread region; and
a first vertical distance between the one peak or the one peak-group of the doping concentration profile of the current spread region and the first surface is larger than a second vertical distance between the first surface and a maximum doping peak of the first shielding region along the vertical direction.

17. The method of claim 16 , comprising forming a source region of the semiconductor device.

18. The method of claim 17 , wherein the source region is of the second conductivity type.

19. The method of claim 17 , comprising forming a body region of the semiconductor device.

20. The method of claim 19 , wherein the body region is between the source region and the current spread region.

Assignees

• Infineon Technologies Ag

Inventors

• Hell Michael
• Elpelt Rudolf
• Ganner Thomas
• Leendertz Caspar

Classifications

• H10P30/2042

  into crystalline silicon carbide · CPC title

• H10P30/21

  of electrically active species · CPC title

• H10P30/22

  using masks · CPC title

• H10D12/038

  having a recessed gate, e.g. trench-gate IGBTs · CPC title

• H10D30/0297

  using recessing of the gate electrodes, e.g. to form trench gate electrodes · CPC title