Cyclic low temperature film growth processes

Patent metadata

Field	Value
Publication number	US-12176204-B2
Application number	US-202318155507-A
Country	US
Kind code	B2
Filing date	Jan 17, 2023
Priority date	Sep 19, 2020
Publication date	Dec 24, 2024
Grant date	Dec 24, 2024

Abstract

A method of nitridation includes cyclically performing the following steps in situ within a processing chamber at a temperature less than about 400° C.: directing an energy flux to a localized region of an unreactive surface of a substrate to convert the localized region of the unreactive surface to a localized reactive region: and selectively nitridating the localized reactive region using a nitrogen-based gas to convert the localized reactive region to a nitride layer.

First claim

What is claimed is:

1. A method of nitridation comprising cyclically performing the following steps in situ within a processing chamber at a temperature less than about 400° C.:
directing an energy flux to at least one localized region of a substrate, both the at least one localized region and at least one remaining region of the substrate being in an unreactive state, wherein directing the energy flux comprises
converting the unreactive state of the at least one localized region to a reactive state to form at least one localized reactive region, and
maintaining the at least one remaining region in the unreactive state; and

selectively nitridating the at least one localized reactive region using a nitrogen-based gas to convert the at least one localized reactive region to at least one localized nitride region.

2. The method of claim 1 , wherein the nitrogen-based gas comprises ammonia (NH 3 ).

3. The method of claim 1 , wherein directing the energy flux to the at least one localized region of the substrate comprises providing the energy flux using a beam source.

4. The method of claim 1 , wherein directing the energy flux to the at least one localized region of the substrate comprises providing the energy flux using a photon source.

5. The method of claim 1 , wherein:
directing the energy flux to the at least one localized region of the substrate comprises concurrently
applying source power to generate the energy flux, and
preventing dissemination of the nitrogen-based gas into the processing chamber; and

selectively nitridating the at least one localized reactive region comprises concurrently
removing the source power, and
supplying the nitrogen-based gas to the processing chamber.

6. The method of claim 1 , wherein the substrate comprises silicon, and wherein the at least one localized nitride region is a localized silicon nitride region.

7. The method of claim 6 , wherein the substrate comprises silicon oxide, and wherein the silicon nitride is silicon oxynitride.

8. A method of nitridation comprising performing the following steps in situ within a processing chamber at a temperature less than about 400° C.:
treating an unreactive silicon or silicon oxide surface of a substrate in the processing chamber to convert the unreactive silicon or silicon oxide surface to a reactive surface by exposing the unreactive silicon or silicon oxide surface to an energy flux;
nitridating the reactive surface using a nitrogen-based plasma to convert the reactive surface to a silicon nitride or silicon oxynitride layer comprising an unreactive silicon nitride or silicon oxynitride surface; and
cyclically performing
treating the unreactive silicon nitride or silicon oxynitride surface to convert the unreactive silicon nitride or silicon oxynitride surface to a subsequent reactive surface by exposing the unreactive silicon nitride or silicon oxynitride surface to the energy flux, and
nitridating the subsequent reactive surface using a nitrogen-based plasma to convert the subsequent reactive surface to a silicon nitride or silicon oxynitride layer comprising a subsequent unreactive silicon nitride or silicon oxynitride surface.

9. The method of claim 8 , wherein:
treating the unreactive silicon nitride or silicon oxynitride surface comprises concurrently
applying source power to generate the energy flux, and
preventing dissemination of nitrogen-based gas into the processing chamber; and

nitridating the subsequent reactive surface comprises concurrently
supplying nitrogen-based gas to the processing chamber, and
applying source power to generate the nitrogen-based plasma.

10. The method of claim 8 , wherein treating the unreactive silicon nitride or silicon oxynitride surface comprises providing the energy flux using a plasma generated in the processing chamber.

11. The method of claim 8 , wherein treating the unreactive silicon nitride or silicon oxynitride surface comprises providing the energy flux using an ion beam source, an electron beam source, or a radical source.

12. The method of claim 8 , wherein treating the unreactive silicon nitride or silicon oxynitride surface comprises providing the energy flux using a photon source.

13. The method of claim 8 , wherein treating the unreactive silicon nitride or silicon oxynitride surface comprises providing the energy flux using a thermal flashing source.

14. A low-temperature nitridation apparatus comprising:
a processing chamber;
a substrate holder disposed in the processing chamber and configured to support a substrate maintained at a temperature less than about 400° C.;
an energy source coupled to the processing chamber and configured to
direct an energy flux to at least one localized region of the substrate, both the at least one localized region and at least one remaining region of the substrate being in an unreactive state, wherein directing the energy flux comprises
converting the unreactive state of the at least one localized region to a reactive state to form at least one localized reactive region, and
maintaining the at least one remaining region in the unreactive state; and

one or more gas inlets fluidically coupled to the processing chamber and configured to selectively nitridate the at least one localized reactive region by supplying a nitrogen-based gas into the processing chamber to convert the at least one localized reactive region to at least one nitride region.

15. The low-temperature nitridation apparatus of claim 14 , wherein the nitrogen-based gas comprises ammonia (NH 3 ).

16. The low-temperature nitridation apparatus of claim 14 , wherein the energy source is a beam source configured to provide the energy flux.

17. The low-temperature nitridation apparatus of claim 14 , wherein the energy source is a photon source configured to provide the energy flux.

18. The low-temperature nitridation apparatus of claim 14 , wherein:
the energy source is further configured to
generate the energy flux using applied source power to direct the energy flux to the at least one localized region of the substrate, and
generate no energy flux upon removal of the applied source power; and

the one or more gas inlets are further configured to
prevent dissemination of the nitrogen-based gas into the processing chamber concurrently with the generation of the energy flux by the energy source, and
supply the nitrogen-based gas to the processing chamber concurrently with the generation of no energy flux by the energy source to selectively nitridate the at least one localized reactive region.

19. The low-temperature nitridation apparatus of claim 14 , further comprising:
a temperature controller coupled to the substrate holder and configured to maintain the substrate at the temperature less than about 400° C.

20. The low-temperature nitridation apparatus of claim 19 , wherein the temperature controller is further configured to maintain the substrate at a temperature less than about 250° C.

Assignees

• Tokyo Electron Ltd

Inventors

• Zhao Jianping
• Ventzek Peter Lowell George
• Iwao Toshihiko

Classifications

• H10P14/69433 Primary

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/6316 Primary

  Formation by nitridation, e.g. nitridation of the substrate · CPC title

• H10P14/6526

  introduced into an oxide material, e.g. changing SiO to SiON · CPC title

• H10P14/6514

  by exposure to a plasma · CPC title