System and method for particle control in MRAM processing

Patent metadata

Field	Value
Publication number	US-12176192-B2
Application number	US-202318231740-A
Country	US
Kind code	B2
Filing date	Aug 8, 2023
Priority date	Aug 13, 2018
Publication date	Dec 24, 2024
Grant date	Dec 24, 2024

Abstract

A system and method for reducing particle contamination on substrates during a deposition process using a particle control system is disclosed here. In one embodiment, a film deposition system includes: a processing chamber sealable to create a pressurized environment and configured to contain a plasma, a target and a substrate in the pressurized environment; and a particle control unit, wherein the particle control unit is configured to provide an external force to each of at least one charged atom and at least one contamination particle in the plasma, wherein the at least one charged atom and the at last one contamination particle are generated by the target when it is in direct contact with the plasma, wherein the external force is configured to direct the at least one charged atom to a top surface of the substrate and to direct the at least one contamination particle away from the top surface of the substrate.

First claim

What is claimed is:

1. A film deposition system comprising:
a processing chamber sealable to create a pressurized environment and configured to contain a plasma, a target and a substrate in the pressurized environment; and
a particle control unit, wherein the particle control unit is configured to provide an external force to each of at least one charged atom and at least one contamination particle in the plasma,
wherein the particle control unit comprises at least one pair of electromagnetic coils, and
wherein the at least one pair of conductive electromagnetic coils is configured to provide an magnetic field between a first electromagnet and a second electromagnet in the particle control unit.

2. The system of claim 1 , wherein the at least one pair of electromagnetic coils comprises at least one of the following: iron and manganese.

3. The system of claim 1 , wherein each of the electromagnetic coils of the at least one pair of electromagnetic coils comprises 10-20 turns and a diameter in a range of 30-40 centimeters.

4. The system of claim 1 , wherein the at least one pair of electromagnetic coils has a shape of one of the following: square and circular.

5. The system of claim 1 , wherein the at least one charged atom and the at last one contamination particle are generated by the target when it is in direct contact with the plasma.

6. The system of claim 1 , wherein the external force is configured to direct the at least one charged atom to a top surface of the substrate and to direct the at least one contamination particle away from the top surface of the substrate.

7. A method for particle control in a film deposition system comprising:
providing a plasma to be in direct contact with at least one target in a processing chamber, thereby generating at least one charged atom;
generating an external force on the at least one charged atom in the plasma so as to direct the at least one charged atom to a substrate; and
directing the at least one charged atom onto a surface of the substrate at a first position on the surface.

8. The method of claim 7 , wherein the external force is provided by one of the following: at least one pair of electromagnetic coils or at least one pair of conductive electrodes.

9. The method of claim 8 , wherein the at least one pair of electromagnetic coils or the at least one pair of conductive electrodes comprises at least one of the following: iron and manganese.

10. The method of claim 8 , wherein the at least one pair of electromagnetic coils or the at least one pair of conductive electrodes is configured near the at least one target with a 2-fold rotational symmetry about a center of the processing chamber.

11. The method of claim 8 , wherein the at least one pair of electromagnetic coils or the at least one pair of conductive electrodes has a shape of one of the following: square and circular.

12. The method of claim 8 , wherein the at least one pair of conductive electrodes is configured to provide an electric field between a first conductive electrode and a second conductive electrode in the particle control unit.

13. The method of claim 8 , wherein the at least one pair of electromagnetic coils is configured to provide a magnetic field between a first electromagnetic coil and a second electromagnetic coil.

14. A film deposition system comprising:
a processing chamber sealable to create a pressurized environment and configured to contain a plasma, a target and a substrate in the pressurized environment; and
a particle control unit, wherein the particle control unit is configured to provide an external force to at least one charged atom in the plasma,
wherein the external force is configured to direct the at least one charged atom to a top surface of the substrate, wherein the substrate is supported by a stage disposed inside the processing chamber,
wherein the particle control unit is further configured to provide a magnetic field between a first electromagnetic coil and a second electromagnetic coil in the particle control unit.

15. The system of claim 14 , wherein the particle control unit comprises at least one pair of electromagnetic coils, and wherein the at least one pair of electromagnetic coils comprises at least one of the following: iron and manganese.

16. The system of claim 15 , wherein the at least one pair of electromagnetic coils is configured near the at least one target in a 2-fold rotational symmetry about the center of the processing chamber.

17. The system of claim 15 , wherein the at least one pair of electromagnetic coils has a shape of one of the following: square and circular.

18. The system of claim 15 , wherein the at least one pair of electromagnetic coils is configured to provide a magnetic field between a first electromagnetic coil and a second electromagnetic coil.

19. The system of claim 14 , wherein the external force is provided by at least one pair of electromagnetic coils.

20. The system of claim 14 , wherein the external force is configured to direct the at least one charged atom to a top surface of the substrate and to direct the at least one contamination particle away from the top surface of the substrate, wherein the substrate is supported by a stage that is off-center from a center of the processing chamber.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Kuo Tsung-Han
• Wang Po-Shu
• Wang Wei-Ming

Classifications

• C23C14/564

  Means for minimising impurities in the coating chamber such as dust, moisture, residual gases · CPC title

• C23C14/54

  Controlling or regulating the coating process · CPC title

• H10N50/01

  Manufacture or treatment · CPC title

• C23C14/35

  by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} · CPC title

• H01J37/3405

  Magnetron sputtering · CPC title